Semiconductor device with integrated mirror and method of producing a semiconductor device with integrated mirror

• US 9,753,218 B2
• Filed: 11/17/2014
• Issued: 09/05/2017
• Est. Priority Date: 12/03/2013
• Status: Active Grant

• Current Assignee: ams AG (Ams-Osram AG)
• Original Assignee: ams AG (Ams-Osram AG)
• Inventors: Kraft, Jochen, Siegert, Joerg, Stueckler, Ewald
• Primary Examiner(s): BLEVINS, JERRY M
• Application Number:
  US15/101,406
• Publication Number:
  US 20160334572A1
• Time in Patent Office: 1,023 Days
• Field of Search: 385 14
• CPC Class Codes: G02B 2006/12104 Mirror; Reflectors or the like
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/122 Basic optical elements, e.g. light-guiding paths
• CPC Class Codes: G02B 6/132 by deposition of thin films
• CPC Class Codes: G02B 6/136 by etching
• CPC Class Codes: G02B 6/4214 the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device G02B6/4246 takes precedence
• CPC Class Codes: G02B 6/43 Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections

Abstract

The semiconductor device comprises a substrate (1) of semiconductor material, a dielectric layer (2) above the substrate, a waveguide (3) arranged in the dielectric layer, and a mirror region (4) arranged on a surface of a mirror support (5) integrated on the substrate. A mirror is thus formed facing the waveguide. The surface of the mirror support and hence the mirror are inclined with respect to the waveguide.

Claims

1. A semiconductor device, comprising:

a substrate of semiconductor material;

a dielectric layer above the substrate;

a waveguide arranged in the dielectric layer;

a mirror support arranged level with the waveguide, the mirror support comprising a surface that is inclined with respect to the waveguide;

the mirror support being a high-density plasma deposited oxide; and

a mirror region being arranged on the surface of the mirror support, the mirror region forming a mirror facing the waveguide and being inclined with respect to the waveguide,

wherein the waveguide extends in a plane, and the surface of the mirror support is inclined with respect to the plane by an angle of inclination between 40° and

50°

,

wherein the mirror region is a filling of an opening of the dielectric layer, and is located between the dielectric layer and the mirror support,

wherein the filling comprises a higher index of refraction than the mirror support,

wherein the mirror support is a silicon oxide, and

wherein the filling is silicon.

2. The semiconductor device of claim 1, wherein the mirror region is a mirror layer arranged conformal with the surface of the mirror support.

3. The semiconductor device of claim 2, wherein the mirror layer is gold, silver, copper, aluminum or TiN.

4. The semiconductor device of claim 1, further comprising:

a further surface of the mirror support, the mirror region forming a further mirror on the further surface, the mirror support being arranged between parts of the waveguide facing the mirror and the further mirror, respectively.

5. The semiconductor device of claim 4, wherein the surface and the further surface of the mirror support are planar and form an angle between 80°

and 100°

.

6. A method of producing a semiconductor device, comprising:

arranging a waveguide in a dielectric layer on a substrate of semiconductor material;

forming an opening in the dielectric layer;

forming a mirror support in the opening, the mirror support comprising a surface that is inclined with respect to the waveguide; and

arranging a mirror region on the surface of the mirror support, thus forming a mirror,

wherein the waveguide extends in a plane, and the surface of the mirror support is inclined with respect to the plane by an angle of inclination between 40° and

50°

,

wherein the mirror support is formed by a high-density plasma deposition of silicon oxide, and

wherein after forming the mirror support, the mirror region is formed by an epitaxial growth of silicon, thus covering the inclined surface of the mirror support and filling the opening.

7. The method according to claim 6, wherein a thinned layer portion of the dielectric layer is left in the opening, and the mirror support is formed on surfaces of the thinned layer portion.

8. The method according to claim 7, wherein a recess is formed in the substrate adjacent to the thinned layer portion of the dielectric layer, and the mirror support is partially arranged within the recess.

9. The method according to claim 6, further comprising:

forming a sacrificial layer after forming the mirror support, the sacrificial layer not covering an area provided for the mirror region;

forming the mirror region as a mirror layer;

applying a reflective layer on the sacrificial layer and on the area provided for the mirror region; and

removing the sacrificial layer, the mirror layer thus being formed by a remaining portion of the reflective layer.

10. A method of producing a semiconductor device, comprising:

arranging a waveguide in a dielectric layer on a substrate of semiconductor material;

forming an opening in the dielectric layer;

forming a mirror support in the opening, the mirror support comprising a surface that is inclined with respect to the waveguide; and

arranging a mirror region on the surface of the mirror support, thus forming a mirror,

wherein the waveguide extends in a plane, and the surface of the mirror support is inclined with respect to the plane by an angle of inclination between 40° and

50°

,

wherein the mirror support is formed by a high-density plasma deposition of silicon oxide, and

wherein after forming the mirror support, the mirror region is formed by a deposition of polysilicon on the surface of the mirror support, thus filling the opening.

11. The method according to claim 10, wherein a thinned layer portion of the dielectric layer is left in the opening, and the mirror support is formed on surfaces of the thinned layer portion.

12. The method according to claim 11, wherein a recess is formed in the substrate adjacent to the thinned layer portion of the dielectric layer, and the mirror support is partially arranged within the recess.

13. The method according to claim 10, further comprising:

forming a sacrificial layer after forming the mirror support, the sacrificial layer not covering an area provided for the mirror region;

forming the mirror region as a mirror layer;

applying a reflective layer on the sacrificial layer and on the area provided for the mirror region; and

removing the sacrificial layer, the mirror layer thus being formed by a remaining portion of the reflective layer.