Scanner based optical proximity correction system and method of use

• US 9,753,363 B2
• Filed: 02/11/2016
• Issued: 09/05/2017
• Est. Priority Date: 01/18/2007
• Status: Active Grant

• Current Assignee: Nikon Corporation, Nikon Precision Incorporated (Nikon Corporation)
• Original Assignee: Nikon Corporation, Nikon Precision Incorporated (Nikon Corporation)
• Inventors: Tyminski, Jacek, Popescu, Raluca, Matsuyama, Tomoyuki
• Primary Examiner(s): DO, THUAN V
• Application Number:
  US15/041,312
• Publication Number:
  US 20160161842A1
• Time in Patent Office: 572 Days
• Field of Search: 716 53
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/68 Preparation processes not covered by groups G03F1/20 - G03F1/50
• CPC Class Codes: G06F 30/00 Computer-aided design [CAD]
• CPC Class Codes: G06F 30/398 Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] optical proximity correction [OPC] design processes G03F1/36

Abstract

A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns is compared against the simulated, corrected reticle design. A determination is made as to whether δ₁<ε₁, wherein δ₁ represents model vs. exposure difference and ε₁ represents predetermined criteria. The technique further includes completing the model when δ₁<ε₁.

Claims

1. A method, comprising:

modifying, by a computer, a simulated corrected reticle design using basic model parameters and tool parameters of a predetermined projection tool;

creating, by the computer, reticle design data which represents a design of layouts to be imaged for a semiconductor device;

comparing a prediction based on the reticle design data to exposure results of a reticle design which is based on the simulated corrected reticle design; and

creating, by the computer, a completed reticle design based on the comparison.

2. The method of claim 1, further comprising exposing a semiconductor device using a mask set formed from the completed reticle design to form an image of a circuit design on the semiconductor device using the predetermined projection tool.

3. The method of claim 1, further comprising determining the tool parameters by conducting an optical proximity effect (OPE) sensitivity analysis.

4. The method of claim 1, wherein the basic model parameters include at least one of:

generic test reticle data;

illuminator data;

numerical aperture data;

feature biasing data; and

non-printable sub-resolution assist features (SRAF).

5. The method of claim 1, wherein the predetermined projection tool is a scanner.

6. The method of claim 1, wherein the predetermined projection tool is a full field stepper.

7. The method of claim 1, wherein the tool parameters include one or more of:

illuminator details;

lens signature as defined in terms of Jones Matrix Map representing lens signature;

local and global flare data;

longitudinal chromatic aberrations;

Illuminator spectrum; and

transverse and longitudinal synchronization errors.

8. A computer program product comprising a computer usable medium having readable program code embodied in the medium, that, when executed by a computer, causes the computer program product to perform the steps of:

modifying a simulated corrected reticle design using basic model parameters and tool parameters of a predetermined projection tool;

creating reticle design data which represents a design of layouts to be imaged for a semiconductor device;

comparing a prediction based on the reticle design data to exposure results of a reticle design which is based on the simulated corrected reticle design;

creating a completed reticle design based on the comparison; and

creating a mask set for use in manufacturing semiconductor devices based on the completed reticle design.

9. The computer program product of claim 8, wherein the computer usable medium having readable program code embodied in the medium is encrypted.

10. The computer program product of claim 8, wherein the tool parameters include one or more of the following:

(i) illuminator details;

(ii) lens signature as defined in terms of Jones Matrix Map representing lens signature;

(iii) local and global flare data;

(iv) longitudinal chromatic aberrations;

(v) Illuminator spectrum; and

(vi) transverse and longitudinal synchronization errors.

11. The computer program product of claim 10, wherein the tool parameters further include at least one of:

(i) NA error;

(ii) Sigma error; and

(iii) thermal aberration.

12. The computer program product of claim 8, further comprising conducting an optical proximity effect (OPE) sensitivity analysis in order to determine which tool parameters are to be used in the model.

13. A system for deploying an application for creating a mask set, comprising:

a computer operable to;

modify a simulated corrected reticle design using basic model parameters and tool parameters of a predetermined projection tool;

create reticle design data which represents a design of layouts to be imaged for a semiconductor device;

compare a prediction based on the reticle design data to exposure results of a reticle design which is based on the simulated corrected reticle design;

create a completed reticle design based on the comparison; and

create the mask set based on the completed reticle design.

14. A method, comprising:

modifying, by the computer, a simulated corrected reticle design using basic model parameters and tool parameters of a predetermined projection tool;

creating, by the computer, reticle design data which represents a design of layouts to be imaged for a semiconductor device;

comparing a prediction based on the reticle design data to exposure results of a reticle design which is based on the simulated corrected reticle design; and

creating, by the computer, a completed reticle design based on the comparison,

wherein the tool parameters comprise at least one of;

illuminator details;

lens signature as defined in terms of Jones Matrix Map representing lens signature;

local and global flare data;

longitudinal chromatic aberrations;

Illuminator spectrum; and

transverse and longitudinal synchronization errors.

15. The method of claim 14, wherein the tool parameters further include at least one of:

NA error;

Sigma error; and

thermal aberration.

16. The method of claim 14, further comprising exposing the semiconductor device using a mask set, formed from the completed reticle design, to form an image of a circuit design on the semiconductor device using the predetermined projection tool.

17. The method of claim 14, further comprising determining the tool parameters by conducting an optical proximity effect (OPE) sensitivity analysis.

18. The method of claim 14, wherein the basic model parameters include at least one of:

generic test reticle data;

illuminator data;

numerical aperture data;

feature biasing data; and

non-printable sub-resolution assist features (SRAF).

19. The method of claim 14, wherein the predetermined projection tool is a scanner.

20. The method of claim 14, wherein the predetermined projection tool is a full field stepper.

21. The method of claim 14, further comprising determining the tool parameters.

22. The method of claim 14, wherein the illuminator details comprise information about intensity and polarization content of each location in the illumination pupil.