Low-power low-dropout voltage regulators with high power supply rejection and fast settling performance

• US 9,753,474 B2
• Filed: 02/05/2014
• Issued: 09/05/2017
• Est. Priority Date: 01/14/2014
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Inventors: Zhang, Jinghua, Setiawan, Ricky, Harrison, Jeffrey Norwood
• Primary Examiner(s): Laxton, Gary L
• Assistant Examiner(s): Jackson, Lakaisha
• Application Number:
  US14/173,742
• Publication Number:
  US 20150198960A1
• Time in Patent Office: 1,308 Days
• CPC Class Codes: G05F 1/56 using semiconductor devices in series with the load as final control devices G05F1/461 takes precedence
• CPC Class Codes: G05F 1/575 characterised by the feedback circuit

Abstract

A low-power low-dropout (LDO) voltage regulator device includes an error amplifier, a level-shifter circuit, and an NMOS pass transistor. The error amplifier compares a sampled portion of a regulated output voltage of the LDO voltage regulator with a reference voltage and generates an error signal. The level-shifter circuit is coupled to the error amplifier. The NMOS pass transistor provides the regulated output voltage with low dropout operation. The level-shifter circuit can shift a voltage level of the error signal to facilitate the low dropout operation of the NMOS pass transistor.

Claims

1. A low-power low-dropout (LDO) voltage regulator device, the device comprising:

an error amplifier configured to compare a sampled portion of a regulated output voltage of the LDO voltage regulator device with a reference voltage and to generate an error signal at a single-ended output node of the error amplifier;

a level-shifter circuit coupled to the error amplifier;

a fast loop comprising a current mirror and a gain boosting circuit coupled to the level-shifter circuit and configured to improve a transient response-time and a slew rate of the LDO voltage regulator device; and

an NMOS pass transistor configured to provide the regulated output voltage with low dropout operation,

wherein the level-shifter circuit comprises a source follower including a PMOS transistor and is configured to shift a voltage level of the error signal at the single-ended output node of the error amplifier to facilitate the low dropout operation of the NMOS pass transistor, and wherein a gate terminal of the NMOS pass transistor is connected to an output node of the source follower.

2. The LDO voltage regulator device of claim 1, wherein the NMOS pass transistor is configured to achieve a high input impedance that results in a high power supply rejection (PSR) performance of the LDO voltage regulator device, wherein the high PSR comprises approximately 10 dB at 100 MHz.

3. The LDO voltage regulator device of claim 1, wherein the NMOS pass transistor is configured with a low output impedance that results in a high unity-gain-bandwidth (UGB) performance of the LDO voltage regulator device.

4. The LDO voltage regulator device of claim 3, wherein achieving the high UGB results in an improvement of more than 60% in a settling time of the LDO voltage regulator device, and wherein the settling time of the LDO voltage regulator device comprises dip-settling time and overshoot-settling time of the LDO voltage regulator device.

5. The LDO voltage regulator device of claim 1, wherein the level-shifter circuit comprises a compensation capacitor coupled between a gate terminal and a source terminal of the PMOS transistor.

6. The LDO voltage regulator device of claim 5, wherein the compensation capacitor is configured to allow low-current operation of the level-shifter circuit by cancellation of a non-dominant pole at the gate terminal of the NMOS pass transistor.

7. The LDO voltage regulator device of claim 1, wherein the fast loop further comprises a coupling capacitor that is used by the fast loop to sense a transient in the regulated output voltage, and wherein the fast loop is configured to increase a current provided to the level-shifter circuit by modification of a transient current that is generated based on the regulated output voltage.

8. A method for providing a low-power low-dropout (LDO) voltage regulator, the method comprising:

configuring an error amplifier to compare a sampled portion of a regulated output voltage of the LDO voltage regulator with a reference voltage and to generate an error signal at a single-ended output node of the error amplifier;

coupling a level-shifter circuit comprising a source follower including a PMOS transistor to the error amplifier;

coupling a fast loop comprising a current mirror and a gain boosting circuit to the level-shifter circuit and configuring the fast loop to improve a transient response-time and a slew rate of the LDO voltage regulator; and

configuring an NMOS pass transistor to provide the regulated output voltage with low dropout operation; and

configuring the level-shifter circuit to shift a voltage level of the error signal at the single-ended output node of the error amplifier to facilitate the low dropout operation of the NMOS pass transistor, wherein a gate terminal of the NMOS pass transistor is connected to an output node of the source follower.

9. The method of claim 8, wherein the fast loop further comprises a coupling capacitor that is used by the fast loop to sense a transient in the regulated output voltage, and wherein the fast loop is configured to increase a current provided to the level-shifter circuit by modification of a transient current that is generated based on the regulated output voltage.

10. The method of claim 8, further comprising configuring the NMOS pass transistor to achieve a high input impedance that results in a high power supply rejection (PSR) performance of the LDO voltage regulator, wherein the high PSR comprises approximately 10 dB at 100 MHz.

11. The method of claim 8, further comprising configuring the NMOS pass transistor with a low output impedance that results in a high unity-gain-bandwidth (UGB) performance of the LDO voltage regulator.

12. The method of claim 11, further comprising improving a settling time of the LDO voltage regulator by more than 60% by achieving the high UGB, and wherein the settling time of the LDO voltage regulator device comprises a dip-settling time and an overshoot-settling time of the LDO voltage regulator.

13. The method of claim 8, wherein coupling the level-shifter circuit comprises coupling a compensation capacitor between a gate terminal and a source terminal of the PMOS transistor.

14. The method of claim 13, further comprising configuring the compensation capacitor to allow low-current operation of the level-shifter circuit by cancellation of a non-dominant pole at the gate terminal of the NMOS pass transistor.

15. A communication device, comprising:

a low-power low-dropout (LDO) voltage regulator device comprising;

an error amplifier configured to generate an error signal at a single-ended output node of the error amplifier based on a comparison between a sampled portion of a regulated output voltage of the LDO voltage regulator and a reference voltage;

an NMOS pass transistor configured to provide the regulated output voltage with low dropout operation;

a level-shifter circuit coupled to the error amplifier and the NMOS pass transistor and configured to shift a voltage level of the error signal at the single-ended output node of the error amplifier to facilitate the low dropout operation of the NMOS pass transistor, wherein the level-shifter circuit comprises a source follower including a PMOS transistor, and wherein a gate terminal of the NMOS pass transistor is connected to an output node of the source follower; and

a fast loop comprising a current mirror and a gain boosting circuit coupled to the level-shifter circuit and configured to improve a transient response-time and a slew rate of the LDO voltage regulator device.

16. The communication device of claim 15, wherein the NMOS pass transistor is configured with a low output impedance that results in a high unity-gain-bandwidth (UGB) performance of the LDO voltage regulator device.

17. The communication device of claim 16, wherein achieving the high UGB results in an improvement of more than 60% in a settling time of the LDO voltage regulator device, and wherein the settling time comprises dip-settling time and overshoot-settling time.

18. The communication device of claim 15, wherein:

the NMOS pass transistor is configured to achieve a high input impedance that results in a high power supply rejection (PSR) performance of the LDO voltage regulator device, and

the high PSR comprises approximately 10 dB at 100 MHz.

19. The communication device of claim 15, wherein:

the level-shifter circuit comprises a compensation capacitor coupled between a gate terminal and a source terminal of the PMOS transistor, and

the compensation capacitor is configured to allow low-current operation of the level-shifter circuit by cancellation of a non-dominant pole at the gate terminal of the NMOS pass transistor.

20. The communication device of claim 15, wherein:

the fast loop comprises;

a coupling capacitor that is used by the fast loop to sense a transient in the regulated output voltage, and

wherein the fast loop is configured to increase a current provided to the level-shifter circuit by modification of a transient current that is generated based on the regulated output voltage.