Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches

• US 9,754,779 B1
• Filed: 02/19/2016
• Issued: 09/05/2017
• Est. Priority Date: 02/19/2016
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Ishikawa, Dai, Fukazawa, Atsuki
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): Stevenson, Andre C
• Application Number:
  US15/048,422
• Publication Number:
  US 20170243734A1
• Time in Patent Office: 564 Days
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/505 using radio frequency discharges
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/31111 by chemical means

Abstract

A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

Claims

1. A method for fabricating a layer structure constituted by a dielectric film containing a Si—

N bond in a trench formed in an upper surface of a substrate, comprising;

(i) simultaneously forming a dielectric film containing a Si—

N bond on the upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the dielectric film formed on the upper surface and the bottom surface and a sidewall portion of the dielectric film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is placed in parallel to the two electrodes; and

(ii) removing either one of but not both of the top/bottom portion and the sidewall portion of the dielectric film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the dielectric film more predominantly than the other according to the different chemical resistance properties, wherein the plasma is a capacitively coupled plasma (CCP) which is excited by applying RF power to one of the two electrodes, wherein the RF power is higher than reference RF power at which the chemical resistance properties of the top/bottom portion of the dielectric film and the sidewall portion of the dielectric film are substantially equivalent, wherein the wet etching removes the top/bottom portion of the dielectric film selectively relative to the sidewall portion of the dielectric film.

2. The method according to claim 1, wherein the plasma is a plasma of Ar, N₂, or O₂.

3. The method according to claim 1, further comprising, prior to steps (i) and (ii), repeating the following steps to determine the reference RF power:

simultaneously forming a dielectric film under the same conditions as in step (i) except that RF power is changed as a variable; and

substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the dielectric film by wet etching under the same conditions as in step (ii).

4. The method according to claim 1, wherein the dielectric film is a SiN film.

5. The method according to claim 1, wherein the wet etching is conducted using a solution of hydrogen fluoride (HF).

6. A method for fabricating a layer structure constituted by a dielectric film containing a Si—

N bond in a trench formed in an upper surface of a substrate, comprising;

(i) simultaneously forming a dielectric film containing a Si—

N bond on the upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the dielectric film formed on the upper surface and the bottom surface and a sidewall portion of the dielectric film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is placed in parallel to the two electrodes; and

(ii) removing either one of but not both of the top/bottom portion and the sidewall portion of the dielectric film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the dielectric film more predominantly than the other according to the different chemical resistance properties, wherein step (i) comprises;

placing a substrate having a trench in its upper surface between the electrodes; and

depositing the dielectric film on the substrate by plasma-enhanced atomic layer deposition (PEALD) using nitrogen gas as a reactant gas, wherein the plasma is a capacitively coupled plasma (CCP) which is excited by applying RF power to one of the two electrodes in each cycle of the PEALD, wherein the RF power is higher than reference RF power at which the chemical resistance properties of the top/bottom portion of the dielectric film and the sidewall portion of the dielectric film are substantially equivalent so that the wet etching in step (ii) removes the top/bottom portion of the dielectric film selectively relative to the sidewall portion of the dielectric film.

7. The method according to claim 6, wherein the PEALD uses aminosilane, halogenated silane, monosilane, or disilane as a precursor.

8. The method according to claim 6, wherein no annealing is conducted between steps (i) and (ii).

9. A method for fabricating a layer structure constituted by a dielectric film containing a Si—

N bond in a trench formed in an upper surface of a substrate, comprising;

(i) simultaneously forming a dielectric film containing a Si—

N bond on the upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the dielectric film formed on the upper surface and the bottom surface and a sidewall portion of the dielectric film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is placed in parallel to the two electrodes; and

(ii) removing either one of but not both of the top/bottom portion and the sidewall portion of the dielectric film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the dielectric film more predominantly than the other according to the different chemical resistance properties, wherein step (i) comprises;

placing a substrate having a trench on its upper surface between the electrodes; and

depositing the dielectric film on the substrate by plasma-enhanced atomic layer deposition (PEALD) using nitrogen gas as a reactant gas, wherein the plasma is a capacitively coupled plasma (CCP) which is excited by applying RF power to one of the two electrodes in each cycle of the PEALD, wherein the RF power is lower than reference RF power at which the chemical resistance properties of the top/bottom portion of the dielectric film and the sidewall portion of the dielectric film are substantially equivalent so that the wet etching in step (ii) removes the sidewall portion of the dielectric film selectively relative to the top/bottom portion of the dielectric film.

10. The method according to claim 9, wherein the PEALD uses aminosilane, halogenated silane, monosilane, or disilane as a precursor.

11. A method for fabricating a layer structure constituted by a dielectric film containing a Si—

N bond in a trench formed in an upper surface of a substrate, comprising;

(i) simultaneously forming a dielectric film containing a Si—

N bond on the upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the dielectric film formed on the upper surface and the bottom surface and a sidewall portion of the dielectric film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is placed in parallel to the two electrodes; and

(ii) removing either one of but not both of the top/bottom portion and the sidewall portion of the dielectric film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the dielectric film more predominantly than the other according to the different chemical resistance properties, wherein step (i) comprises;

depositing a dielectric film on a substrate having a trench in its upper surface;

placing the substrate between the two electrodes; and

exciting the plasma between the electrodes to treat a surface of the deposited dielectric film without depositing a film, wherein the plasma is a capacitively coupled plasma (CCP) which is excited by applying RF power to one of the two electrodes, wherein the RF power is higher than reference RF power at which the chemical resistance properties of the top/bottom portion of the dielectric film and the sidewall portion of the dielectric film are substantially equivalent so that the wet etching in step (ii) removes the top/bottom portion of the dielectric film selectively relative to the sidewall portion of the dielectric film.

12. The method according to claim 11, wherein the dielectric film is deposited on the substrate by atomic layer deposition (ALD).

13. The method according to claim 12, wherein the ALD is plasma-enhanced ALD (PEALD), and step (i) is conducted in its entirety in the same chamber.

14. The method according to claim 11, wherein no annealing is conducted after depositing the dielectric film and before step (ii).

15. The method according to claim 11, wherein the deposited dielectric film has a thickness of 10 nm or less.