Selective etch for silicon films

• US 9,754,800 B2
• Filed: 04/25/2016
• Issued: 09/05/2017
• Est. Priority Date: 05/27/2010
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Zhang, Jingchun, Wang, Anchuan, Ingle, Nitin K.
• Primary Examiner(s): DUCLAIR, STEPHANIE P.
• Application Number:
  US15/137,754
• Publication Number:
  US 20160240389A1
• Time in Patent Office: 498 Days
• Field of Search: None
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/311 Etching the insulating layers by chemical or physical means H01L21/31058 takes precedence
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 21/32137 of silicon-containing layers

Abstract

A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More generally, silicon-containing films containing less oxygen are removed more rapidly than silicon-containing films which contain more oxygen. Other exemplary applications include trimming silicon carbon nitride films while essentially retaining silicon oxycarbide. Applications such as these are enabled by the methods presented herein and enable new process flows. These process flows are expected to become desirable for a variety of finer linewidth structures. Methods contained herein may also be used to etch silicon-containing films faster than nitrogen-and-silicon containing films having a greater concentration of nitrogen.

Claims

1. A method of etching patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate has an exposed oxygen-and-silicon-containing region and an exposed silicon-containing region which contains less oxygen than the oxygen-and-silicon-containing region, the method comprising:

flowing a fluorine-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a plasma in the first plasma region to produce plasma effluents; and

etching the silicon-containing region faster than the oxygen-and-silicon-containing region by flowing the plasma effluents into the substrate processing region, wherein the etching is performed while maintaining a partial pressure of the fluorine-containing precursor below about 100 mTorr.

2. The method of claim 1 wherein an etch rate of the exposed silicon-containing region is greater than an etch rate of the exposed oxygen-and-silicon-containing region by a multiplicative factor greater than 5.

3. The method of claim 1 wherein the exposed silicon-containing region is essentially devoid of oxygen.

4. The method of claim 1 wherein the exposed silicon-containing region consists essentially of silicon.

5. The method of claim 1 wherein the exposed oxygen-and-silicon-containing region consists essentially of SiO2.

6. The method of claim 1 wherein the exposed silicon-containing region is polysilicon, the exposed oxygen-and-silicon-containing region is SiO2 and the polysilicon is trimmed by between 1 nm and 15 nm.

7. The method of claim 1 wherein the exposed silicon-containing region consists essentially of silicon, carbon and nitrogen.

8. The method of claim 1 wherein the exposed oxygen-and-silicon-containing region consists essentially of silicon, carbon and oxygen.

9. The method of claim 1 wherein the exposed silicon-containing region is SiCN, the exposed oxygen-and-silicon-containing region is SiOC and the SiCN is removed from the base of a trench formed in the SiOC.

10. The method of claim 1 wherein the fluorine-containing precursor comprises at least one precursor selected from the group consisting of nitrogen trifluoride, diatomic fluorine, monatomic fluorine and fluorine-substituted hydrocarbons.

11. The method of claim 1 wherein the plasma effluents possess an atomic ratio of fluorine-to-hydrogen which is greater than 5:

1.

12. The method of claim 1 wherein essentially no ionized species are present in the plasma effluents within the substrate processing region to increase the etch selectivity of the silicon-containing region.

13. A method of etching patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate has an exposed nitrogen-and-silicon-containing region and an exposed silicon-containing region which contains less nitrogen than the nitrogen-and-silicon-containing region, the method comprising:

flowing a fluorine-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a plasma in the first plasma region to produce plasma effluents; and

etching the silicon-containing region faster than the nitrogen-and-silicon-containing region by flowing the plasma effluents into the substrate processing region, wherein the etching is performed while maintaining a partial pressure of the fluorine-containing precursor below about 100 mTorr.

14. The method of claim 13 wherein an etch rate of the exposed silicon-containing region is greater than an etch rate of the exposed nitrogen-and-silicon-containing region by a multiplicative factor greater than 1.5.

15. The method of claim 13 wherein the exposed silicon-containing region is essentially devoid of nitrogen.

16. The method of claim 13 wherein the exposed silicon-containing region consists essentially of silicon.

17. The method of claim 13 wherein the exposed nitrogen-and-silicon-containing region consists essentially of silicon nitride.

18. The method of claim 13 wherein the fluorine-containing precursor comprises at least one precursor selected from the group consisting of nitrogen trifluoride, diatomic fluorine, monatomic fluorine and fluorine-substituted hydrocarbons.

19. The method of claim 13 wherein the fluorine-containing precursor and the plasma effluents are essentially devoid of hydrogen.

20. The method of claim 13 wherein the plasma effluents possess an atomic ratio of fluorine-to-hydrogen which is greater than 5:

1.