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Selective etch for silicon films

  • US 9,754,800 B2
  • Filed: 04/25/2016
  • Issued: 09/05/2017
  • Est. Priority Date: 05/27/2010
  • Status: Active Grant
First Claim
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1. A method of etching patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate has an exposed oxygen-and-silicon-containing region and an exposed silicon-containing region which contains less oxygen than the oxygen-and-silicon-containing region, the method comprising:

  • flowing a fluorine-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a plasma in the first plasma region to produce plasma effluents; and

    etching the silicon-containing region faster than the oxygen-and-silicon-containing region by flowing the plasma effluents into the substrate processing region, wherein the etching is performed while maintaining a partial pressure of the fluorine-containing precursor below about 100 mTorr.

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