Tri-modal carrier for a semiconductive wafer
First Claim
1. A tri-modal carrier for a semiconductive wafer comprises:
- a doped semiconductive substrate;
a plurality of electrostatic field generating (EFG) circuits;
a capacitance charging interface;
said semiconductive substrate comprises a first face and a second face;
each of said plurality of EFG circuits comprises a positive pole, a negative pole, and a biased pole;
said plurality of EFG circuits being distributed across said doped semiconductive substrate;
said positive pole and said negative pole being embedded into said doped semiconductive substrate from said first face;
said positive pole and said negative pole being offset from each other across said first face;
an exposed portion of said doped semiconductive substrate being located between said positive pole and said negative pole for each of said plurality of EFG circuits;
said biased pole being said exposed portion of said doped semiconductive substrate; and
said capacitance charging interface being electrically connected to said positive pole, said negative pole, and said biased pole.
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Accused Products
Abstract
A tri-modal carrier provides a structural platform to temporarily bond a semiconductive wafer and can be used to transport the semiconductive wafer or be used to perform manufacturing processes on the semiconductive wafer. The tri-modal carrier includes a doped semiconductive substrate, a plurality of electrostatic field generating (EFG) circuits, and a capacitance charging interface. A positive pole and a negative pole from each EFG circuit are embedded into the doped semiconductive substrate. An exposed portion of the doped semiconductive substrate is located between the positive pole and the negative pole, which is used as a biased pole for each EFG circuit. The combination of these poles for each EFG circuit is used to generate a non-uniform electrostatic field for bonding the semiconductive wafer. The tri-modal carrier also uses flat surface properties and the removal of trapped gas particles to strengthen the bond between the tri-modal carrier and the semiconductive wafer.
19 Citations
10 Claims
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1. A tri-modal carrier for a semiconductive wafer comprises:
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a doped semiconductive substrate; a plurality of electrostatic field generating (EFG) circuits; a capacitance charging interface; said semiconductive substrate comprises a first face and a second face; each of said plurality of EFG circuits comprises a positive pole, a negative pole, and a biased pole; said plurality of EFG circuits being distributed across said doped semiconductive substrate; said positive pole and said negative pole being embedded into said doped semiconductive substrate from said first face; said positive pole and said negative pole being offset from each other across said first face; an exposed portion of said doped semiconductive substrate being located between said positive pole and said negative pole for each of said plurality of EFG circuits; said biased pole being said exposed portion of said doped semiconductive substrate; and said capacitance charging interface being electrically connected to said positive pole, said negative pole, and said biased pole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification