Non-volatile programmable memory cell and array for programmable logic array

• US 9,754,948 B2
• Filed: 01/15/2014
• Issued: 09/05/2017
• Est. Priority Date: 06/13/2005
• Status: Active Grant

• Current Assignee: Microsemi SoC Corp.
• Original Assignee: Microsemi SoC Corp.
• Inventors: Dhaoui, Fethi, McCollum, John, Hawley, Frank, Wilkinson, Leslie Richard
• Primary Examiner(s): Kalam, Abul
• Application Number:
  US14/155,752
• Publication Number:
  US 20140138755A1
• Time in Patent Office: 1,329 Days
• Field of Search: None
• CPC Class Codes: G11C 16/0433 comprising cells containing a single floating gate transistor and one or more separate select transistors
• CPC Class Codes: H01L 27/105 including field-effect components
• CPC Class Codes: H01L 27/11807 CMOS gate arrays
• CPC Class Codes: H10B 41/00 Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates

Abstract

A non-volatile programmable memory cell suitable for use in a programmable logic array includes a non-volatile MOS transistor of a first conductivity type in series with a volatile MOS transistor of a second conductivity type. The non-volatile MOS transistor may be a floating gate transistor, such as a flash transistor, or may be another type of non-volatile transistor such as a floating charge-trapping SONOS, MONOS transistor, or a nano-crystal transistor. A volatile MOS transistor, an inverter, or a buffer may be driven by coupling its gate or input to the common connection between the non-volatile MOS transistor and the volatile MOS transistor.

Claims

1. A non-volatile programmable memory cell comprising:

a non-volatile MOS transistor formed in a first semiconductor region and coupled between a first power supply potential and an output node;

a volatile MOS transistor formed in a second semiconductor region and coupled between the output node and a second power supply potential; and

a volatile MOS switch transistor formed in a third semiconductor region electrically isolated from the first semiconductor region, the volatile MOS switch transistor having a gate couple to the output node

wherein the non-volatile MOS transistor includes a gate and a diffused region having first and second ends, the diffused region including a first contact at the first end, a second contact at the second end, and a channel region between the first and second ends and below the gate, the diffused region having a first width at the first end and a second width at the second end, wherein the first and second widths are wider than a width of the channel region.

2. The non-volatile programmable memory cell of claim 1 wherein:

the non-volatile memory cell is formed in a semiconductor substrate of a first conductivity type;

the non-volatile MOS transistor is of a second conductivity type and the first semiconductor region has the first conductivity type;

the volatile MOS transistor is of the first conductivity type and the second semiconductor region has the second conductivity type and;

the volatile MOS switch transistor is of the second conductivity type and the third semiconductor region has the first conductivity type.

3. The non-volatile programmable memory cell of claim 2 wherein the first semiconductor region is a well region of the first conductivity type formed within a first well region of the second conductivity type and the third semiconductor region is the semiconductor substrate.

4. The non-volatile programmable memory cell of claim 3 wherein the volatile MOS transistor is formed in the first well region of the second conductivity type.

5. The non-volatile programmable memory cell of claim 2 wherein the first semiconductor region is a first well region of the first conductivity type formed within a well region of the second conductivity type and the second semiconductor region is a second well region of the first conductivity type isolated from the first well region of the first conductivity type.

6. The non-volatile programmable memory cell of claim 2 wherein the non-volatile MOS transistor is a floating gate transistor.

7. The non-volatile programmable memory cell of claim 2 wherein the non-volatile MOS transistor is a flash transistor.

8. The non-volatile programmable memory cell of claim 1 wherein said non-volatile MOS transistor is a floating charge-trapping transistor.

9. The non-volatile programmable memory cell of claim 2 wherein the first conductivity type is N and said second conductivity type is P.

10. The non-volatile programmable memory cell of claim 2 wherein the first conductivity type is P and said second conductivity type is N.

11. The non-volatile programmable memory cell of claim 1 further including at least one additional volatile MOS switch transistor formed in a semiconductor region electrically isolated from the second semiconductor region containing the volatile MOS pulldown transistor, the at least one additional volatile MOS switch transistor coupled to the output node.

12. The non-volatile programmable memory cell of claim 2 further including at least one additional volatile MOS switch transistor of the second conductivity type formed in the third semiconductor region, the at least one additional volatile MOS switch transistor coupled to the output node.

13. A non-volatile programmable memory cell formed in a p-type semiconductor substrate and comprising:

a non-volatile n-channel MOS transistor formed in a first p-type semiconductor region and coupled between a first power supply potential and an output node;

a volatile p-channel MOS transistor formed in an n-type semiconductor region and coupled between the output node and a second power supply potential; and

a volatile n-channel MOS switch transistor formed in a second p-type semiconductor region and coupled to the output node;

wherein;

the non-volatile MOS transistor includes a gate and a diffused region having a first contact at a first end thereof, a second contact at a second end thereof, and a channel region between the first and second ends and below the gate, the diffused region having a first width at the first end and a second width at the second end, wherein the first and second widths are wider than a width of the channel region; and

the first and second p-type semiconductor regions are electrically isolated from one another.

14. The non-volatile programmable memory cell of claim 13 wherein:

the n-type semiconductor region is an n-well disposed in the semiconductor substrate;

the first p-type region is a p-well disposed within the n-well; and

the second p-type semiconductor region is the substrate.

15. The non-volatile programmable memory cell of claim 13 wherein:

the n-type semiconductor region is an n-well disposed in the semiconductor substrate;

the first p-type region is a first p-well disposed within the n-well; and

the second p-type semiconductor region is a second p-well disposed in the substrate and isolated from the first p-well.

16. The non-volatile programmable memory cell of claim 13 further including at least one additional volatile n-channel MOS switch transistor formed in the second p-type semiconductor region and coupled to the output node.

17. A non-volatile programmable memory cell formed in a p-type semiconductor substrate and comprising:

a volatile n-channel MOS transistor formed in a first p-type semiconductor region and coupled between a first power supply potential and an output node;

a non-volatile p-channel MOS transistor formed in an n-type semiconductor region and coupled between the output node and a second power supply potential; and

a volatile n-channel MOS switch transistor formed in a second p-type semiconductor region and coupled to the output node;

wherein;

the non-volatile p-channel MOS transistor includes a gate and a diffused region having first and second ends, the diffused region including a first contact at the first end, a second contact at the second end, and a channel region between the first and second ends and below the gate, the diffused region having a first width at the first end and a second width at the second end, wherein the first and second widths are wider than a width of the channel region; and

the first and second p-type semiconductor regions are electrically isolated from one another.

18. The non-volatile programmable memory cell of claim 17 wherein:

the n-type semiconductor region is an n-well disposed in the semiconductor substrate;

the first p-type region is a p-well disposed within the n-well; and

the second p-type semiconductor region is the substrate.

19. The non-volatile programmable memory cell of claim 17 wherein:

the n-type semiconductor region is an n-well disposed in the semiconductor substrate;

the first p-type region is a first p-well disposed within the n-well; and

the second p-type semiconductor region is a second p-well disposed in the substrate and isolated from the first p-well.

20. The non-volatile programmable memory cell of claim 17 further including at least one additional volatile n-channel MOS switch transistor formed in the second p-type semiconductor region and coupled to the output node.