Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
First Claim
1. A method for manufacturing an article using a gallium and nitrogen containing laser diode device, the method comprising:
- providing a gallium and nitrogen containing substrate having a surface region;
forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region;
patterning the epitaxial material to form a plurality of dies, each of the dies corresponding to at least one laser device, characterized by a first pitch between a pair of dies, the first pitch being less than a design width;
transferring at least a portion of the plurality of dies to a carrier wafer such that each pair of transferred dies is configured with a second pitch between each pair of dies, the second pitch being larger than the first pitch and corresponding to the design width, the transferring comprising;
selectively removing at least a portion of a release region of one or more dies while leaving an anchor region intact between the one or more dies and the gallium and nitrogen containing substrate,selectively bonding the one or more dies to the carrier wafer,releasing the one or more dies from the gallium and nitrogen containing substrate by separating the anchor region associated with each of the one or more dies while a portion of the epitaxial material remains bonded to the carrier wafer; and
using at least one of the dies in an application selected from at least one of a laser display or a light.
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Accused Products
Abstract
In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The method includes patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. The method includes transferring each of the plurality of dice to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch corresponding to the design width.
260 Citations
20 Claims
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1. A method for manufacturing an article using a gallium and nitrogen containing laser diode device, the method comprising:
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providing a gallium and nitrogen containing substrate having a surface region; forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region; patterning the epitaxial material to form a plurality of dies, each of the dies corresponding to at least one laser device, characterized by a first pitch between a pair of dies, the first pitch being less than a design width; transferring at least a portion of the plurality of dies to a carrier wafer such that each pair of transferred dies is configured with a second pitch between each pair of dies, the second pitch being larger than the first pitch and corresponding to the design width, the transferring comprising; selectively removing at least a portion of a release region of one or more dies while leaving an anchor region intact between the one or more dies and the gallium and nitrogen containing substrate, selectively bonding the one or more dies to the carrier wafer, releasing the one or more dies from the gallium and nitrogen containing substrate by separating the anchor region associated with each of the one or more dies while a portion of the epitaxial material remains bonded to the carrier wafer; and using at least one of the dies in an application selected from at least one of a laser display or a light. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification