Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure

• US 9,758,365 B2
• Filed: 08/10/2015
• Issued: 09/12/2017
• Est. Priority Date: 11/11/2011
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Harame, David L., Stamper, Anthony K.
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): Parker, John M
• Application Number:
  US14/821,997
• Publication Number:
  US 20150344293A1
• Time in Patent Office: 764 Days
• CPC Class Codes: B81B 2201/0285 Vibration sensors
• CPC Class Codes: B81B 3/0027 Structures for transforming mechanical energy, e.g. potential energy of a spring into translation, sound into translation
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H03H 2001/0064 comprising semiconductor material
• CPC Class Codes: H03H 2003/027 the resonators or networks being of the microelectro-mechanical [MEMS] type
• CPC Class Codes: H03H 2009/155 using MEMS techniques
• CPC Class Codes: H03H 2009/241 Bulk-mode MEMS resonators
• CPC Class Codes: H03H 3/02 for the manufacture of piezoelectric or electrostrictive resonators or networks H03H3/08 takes precedence
• CPC Class Codes: H03H 9/1007 for bulk acoustic wave [BAW] devices
• CPC Class Codes: H03H 9/173 Air-gaps
• CPC Class Codes: H10N 30/306 Cantilevers

Abstract

Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.

Claims

1. A structure, comprising:

a single crystalline beam formed from a silicon layer of an silicon on insulator (SOI) substrate;

one or more devices in the silicon layer, separated from the single crystalline beam by one or more shallow trench isolation structures;

insulator material coating the single crystalline beam;

an upper cavity formed above the single crystalline beam, over a portion of the insulator material;

a lower cavity formed in bulk substrate of the SOI substrate, below the single crystalline beam and a BOX layer of the SOI substrate;

a connecting via that connects the upper cavity to the lower cavity, the connecting via being coated with the insulator material;

a Bulk Acoustic Wave (BAW) filter or Bulk Acoustic Resonator (BAR) on and separate from the single crystalline beam;

a first metal layer over an insulator layer on the single crystalline beam, a piezoelectric material on the first metal layer, and a second metal layer on the piezoelectric material; and

a trench through the first metal layer, the piezoelectric material, the second metal layer and the insulator layer,

wherein the insulator material is formed over exposed portions of at least the first metal layer, the piezoelectric material and the second metal layer, and further fills the trench.

2. The structure of claim 1, wherein the BAW filter or BAR is in electrical connection with at least one of the one or more devices.

3. The structure of claim 1, further comprising a lid material over the upper cavity and the insulator material.

4. The structure of claim 3, further comprising a nitride film over the lid material to provide a hermetic seal to the upper cavity and the lower cavity.

6. The structure of claim 1, wherein the insulator material is oxide.

5. A structure, comprising:

a single crystalline beam formed from a silicon layer of an silicon on insulator (SOI) substrate;

insulator material coating the single crystalline beam;

an upper cavity formed above the single crystalline beam, over a portion of the insulator material;

a lower cavity formed in bulk substrate of the SOI substrate, below the single crystalline beam and a BOX layer of the SOI substrate;

a connecting via that connects the upper cavity to the lower cavity, the connecting via being coated with the insulator material;

a Bulk Acoustic Wave (BAW) filter or Bulk Acoustic Resonator (BAR) on the single crystalline beam;

layers of metal and piezoelectric material over the silicon layer, wherein the metal layers and piezoelectric material comprises a first metal layer over an insulator layer on the single crystalline beam, the piezoelectric material on the first metal layer, and a second metal layer on the piezoelectric material; and

a trench through the first metal layer, the piezoelectric material, the second metal layer and the insulator layer,

wherein the insulator material is formed over exposed portions of at least the first metal layer, the piezoelectric material and the second metal layer, and further fills the trench.

7. A design structure stored on a non-transitory machine readable medium used in design, manufacture, or simulation of an integrated circuit, the design structure comprising:

a single crystalline beam formed from a silicon layer of an silicon on insulator (SOI) substrate,

insulator material coating the single crystalline beam;

an upper cavity formed above the single crystalline beam, over a portion of the insulator material;

a lower cavity formed in bulk substrate of the SOI substrate, below the single crystalline beam and a BOX layer of the SOI substrate;

a connecting via that connects the upper cavity to the lower cavity, the connecting via being coated with the insulator material;

a Bulk Acoustic Wave (BAW) filter or Bulk Acoustic Resonator (BAR) on the single crystalline beam;

a first metal layer over an insulator layer on the single crystalline beam, a piezoelectric material on the first metal layer, and a second metal layer on the piezoelectric material; and

a trench through the first metal layer, the piezoelectric material, the second metal layer and the insulator layer,

wherein the insulator material is formed over exposed portions of at least the first metal layer, the piezoelectric material and the second metal layer, and further fills the trench.

8. The design structure of claim 7, wherein the design structure is stored on the non-transitory machine readable medium and comprises a netlist.

9. The design structure of claim 7, wherein the design structure resides on storage medium as a data format used for the exchange of layout data of integrated circuits.

10. The design structure of claim 7, wherein the design structure resides in a programmable gate array.

11. The design structure of claim 7, wherein the BAW filter or BAR is separate from the crystalline beam.

12. The design structure of claim 11, further comprising a lid material over the upper cavity and the insulator material.

13. The design structure of claim 12, further comprising a nitride film over the lid material to provide a hermetic seal to the upper cavity and the lower cavity.