Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor

• US 9,758,368 B2
• Filed: 02/22/2016
• Issued: 09/12/2017
• Est. Priority Date: 03/15/2013
• Status: Active Grant

• Current Assignee: Versana Micro Inc.
• Original Assignee: Versana Micro Inc.
• Inventors: Gogoi, Bishnu Prasanna
• Primary Examiner(s): COLEMAN, WILLIAM D
• Application Number:
  US15/050,388
• Publication Number:
  US 20160167954A1
• Time in Patent Office: 568 Days
• CPC Class Codes: B81B 2201/0207 Bolometers
• CPC Class Codes: B81B 2201/0214 Biosensors; Chemical sensors
• CPC Class Codes: B81B 2201/0228 Inertial sensors
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 2201/0278 Temperature sensors
• CPC Class Codes: B81B 2207/012 the micromechanical device and the control or processing electronics being separate parts in the same package
• CPC Class Codes: B81B 2207/05 Arrays
• CPC Class Codes: B81B 2207/09 Packages
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: H01L 27/14 including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation radiation-sensitive components structurally associated with one or more electric light sources only H01L31/14; couplings of light guides with optoelectronic elements G02B6/42
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H05K 7/02 Arrangements of circuit components or wiring on supporting structure
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
• CPC Class Codes: H10N 30/302 Sensors
• CPC Class Codes: H10N 30/308 Membrane type
• CPC Class Codes: H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 MRAM devices H10B61/00

Abstract

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

Claims

1. A monolithically integrated multi-sensor (MIMs) comprising:

a first integrated circuit comprising;

a magnetic sensor configured to measure a magnetic parameter; and

a first MEMs sensor configured to measure a first parameter; and

a second MEMs sensor configured to measure a second parameter wherein the magnetic parameter, the first parameter, and the second parameter are different and wherein the magnetic sensor, the first MEMs sensor, and the second MEMs sensor are formed on or in a single semiconductor substrate.

2. The MIMS of claim 1 further including a second integrated circuit having at least one sensor wherein the second integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

3. The MIMS of claim 1 a third integrated circuit having control circuitry wherein the first integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

4. The MIMS of claim 1 wherein at least one of the magnetic sensor, the first MEMs sensor, or the second MEMs sensor is exposed to an external environment and wherein at least one of the magnetic sensor, the first MEMs sensor, or the second MEMs sensor is sealed from the external environment.

5. The MIMS of claim 1 wherein at least one layer of a semiconductor device fabrication process to form the first integrated circuit is shared in common with at least two of the magnetic sensor, the first MEMs sensor, or the second MEMs sensor and wherein at least a portion of the at least one layer is etched.

6. The MIMS of claim 1 wherein the at least one layer of the first integrated circuit seals cavities of at least two of the magnetic sensor, the first MEMs sensor, or the second MEMs sensor.

7. The MIMS of claim 1 wherein a volume of a first cavity is fixed and wherein a volume of a second cavity is configured to vary according to a stimulus.

8. The MIMS of claim 1 wherein the at least one layer of the first integrated circuit seals at least one of the magnetic sensor, the first MEMs sensor, or the second MEMs sensor and wherein the at least one layer of the first integrated circuit includes an opening exposing at least one of the magnetic sensor, the first MEMs sensor, or the second MEMs sensor to an external environment.

9. The MIMS of claim 1 wherein the at least one layer of the first integrated circuit forms a cap on at least one of the magnetic sensor, the first MEMs sensor, or the second MEMs sensor and wherein the at least one layer of the first integrated circuit forms a moving plate on at least one of the magnetic sensor, the first MEMs sensor, or the second MEMs sensor.

10. The MIMS of claim 1 wherein the at least one layer of the first integrated circuit is configured to flex in at least one of the magnetic sensor, the first MEMs sensor, or the second MEMs sensor and wherein the at least one layer of the first integrated circuit is configured not to flex in at least one of the magnetic sensor, the first MEMs sensor, or the second MEMs sensor.

11. The MIMS of claim 1 wherein at least one sensor of the first or second MEMs sensors is an inertial sensor.

12. The MIMS of claim 1 wherein the first or the second MEMs sensors are sealed from an external environment at a different pressure.

13. The MIMS of claim 1 wherein the first integrated circuit includes one or more deposited layers that seal at least one sensor of the magnetic sensor, the first MEMs sensor, or the second MEMs sensor.

14. The MIMS of claim 1 wherein the first integrated includes at least one deposited layer comprising silicon oxide, PSG (phosphosilicate glass), BSG (borosilicate glass), BPSG (Boron Phosphosilicate Glass), PECVD Oxide, TEOS (tetraethylorthosilicate), plasma assisted oxide, laser assisted CVD oxide, sputtered oxide, amorphous silicon, silicon nitride, silicon oxynitride, silicon carbide, silicon germanium, germanium, diamond, polymer, photoresist, or metals such as aluminum, gold, copper, silver, tungsten, nickel, titanium, chrome, platinum, or iridium.

15. The MIMS of claim 1 wherein at least one sensor of the magnetic sensor, the first MEMs sensor, or the second MEMs sensor is sealed by depositing a layer using low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, sub atmospheric chemical vapor deposition, physical vapor deposition, atomic layer deposition, metallo organic chemical vapor deposition, molecular beam epitaxy, sputtering, evaporating, spin-coating, electro-plating, or spray coating.

16. The MIMs of claim 1 wherein the first integrated circuit comprises at least three of an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, or a biological sensor.

17. The MIMS of claim 1 wherein the first integrated circuit is formed on one or more substrates.

18. The MIMS of claim 1 wherein a second substrate couples to the single semiconductor substrate.

19. The MIMS of claim 1 further including a fourth sensor.

20. The MIMS of claim 1 wherein the second MEMs sensor is an infra-red sensor.

21. The MIMs of claim 1 wherein the second MEMs sensor is a force sensor.

22. The MIMS of claim 1 wherein the second MEMs sensor is a humidity sensor.

23. The MIMS of claim 1 wherein the second MEMs sensor is a microphone.

24. The MIMS of claim 1 wherein the first integrated circuit further includes electronic circuitry.

25. The MIMS of claim 1 further including wherein the second MEMs sensor is a transducer.

26. The MIMS of claim 1 wherein the second MEMs sensor comprises a pressure sensor.

27. The MIMS of claim 1 further including a fourth MEMs sensor.

28. The MIMS of claim 27 wherein the fourth MEMs sensor is configured to measure a parameter and wherein the parameter of the fourth MEMs sensor is different than the magnetic sensor, the first MEMs sensor and the second MEMs sensor.

29. A monolithically integrated multi-sensor (MIMs) comprising:

a first integrated circuit comprising;

a magnetic sensor configured to measure a magnetic parameter; and

a first MEMs sensor configured to measure a first parameter;

a second MEMs sensor configured to measure a second parameter; and

a third MEMs sensor configured to measure a third parameter wherein the magnetic parameter, the first parameter, the second parameter, and the third parameter are different and wherein the magnetic sensor, the first MEMs sensor, and the second MEMs sensor are formed on or in a single semiconductor substrate.

30. The MIMS of claim 29 further including a second integrated circuit having at least one sensor wherein the second integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

31. The MIMS of claim 29 a third integrated circuit having control circuitry wherein the first integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

32. The MIMS of claim 29 wherein at least one of the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor is exposed to an external environment and wherein at least one of the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor is sealed from the external environment.

33. The MIMS of claim 29 wherein at least one layer of first integrated circuit is shared in common with at least two of the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor and wherein at least a portion of the at least one layer of the first integrated circuit is etched.

34. The MIMS of claim 29 wherein the at least one layer of the first integrated circuit seals cavities of at least two of the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor.

35. The MIMS of claim 29 wherein a volume of a first cavity is fixed and wherein a volume of a second cavity is configured to vary according to a stimulus.

36. The MIMS of claim 29 wherein the at least one layer of the first integrated circuit seals at least one of the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor and wherein the at least one layer of the first integrated circuit includes an opening exposing at least one of the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor to an external environment.

37. The MIMS of claim 29 wherein the at least one layer of the first integrated circuit forms a cap on at least one of the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor and wherein the at least one layer of the first integrated circuit forms a moving plate on at least one of the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor.

38. The MIMS of claim 29 wherein the at least one layer of the first integrated circuit is configured to flex in at least one of the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor and wherein the at least one layer of the first integrated circuit is configured not to flex in at least one of the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor.

39. The MIMS of claim 29 wherein at least one sensor of the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor is an inertial sensor.

40. The MIMS of claim 29 wherein two of the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor are sealed from an external environment at a different pressure.

41. The MIMS of claim 29 wherein at least one sensor of the first integrated circuit is sealed by one or more deposited layers.

42. The MIMS of claim 29 wherein at least one or more deposited layers of the first integrated circuit comprise silicon oxide, PSG (phosphosilicate glass), BSG (borosilicate glass), BPSG (Boron Phosphosilicate Glass), PECVD Oxide, TEOS (tetraethylorthosilicate), plasma assisted oxide, laser assisted CVD oxide, sputtered oxide, amorphous silicon, silicon nitride, silicon oxynitride, silicon carbide, silicon germanium, germanium, diamond, polymer, photoresist, or metals such as aluminum, gold, copper, silver, tungsten, nickel, titanium, chrome, platinum, or iridium.

43. The MIMS of claim 29 wherein at least one sensor of the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor is sealed by depositing a layer using low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, sub atmospheric chemical vapor deposition, physical vapor deposition, atomic layer deposition, metallo organic chemical vapor deposition, molecular beam epitaxy, sputtering, evaporating, spin-coating, electro-plating, or spray coating.

44. The MIMs of claim 29 wherein the first integrated circuit comprises at least three of an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, or a biological sensor.

45. The MIMS of claim 29 wherein the first integrated circuit is formed on one or more substrates.

46. The MIMS of claim 29 wherein a second substrate couples to the single semiconductor substrate.

47. The MIMS of claim 29 wherein at least two sensors of the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor is sealed by depositing a layer using low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, sub atmospheric chemical vapor deposition, physical vapor deposition, atomic layer deposition, metallo organic chemical vapor deposition, molecular beam epitaxy, sputtering, evaporating, spin-coating, electro-plating, or spray coating.

48. The MIMS of claim 29 wherein at least three sensors of the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor is sealed by depositing a layer using low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, sub atmospheric chemical vapor deposition, physical vapor deposition, atomic layer deposition, metallo organic chemical vapor deposition, molecular beam epitaxy, sputtering, evaporating, spin-coating, electro-plating, or spray coating.

49. The MIMs of claim 29 wherein the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor are sealed by depositing a layer using low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, sub atmospheric chemical vapor deposition, physical vapor deposition, atomic layer deposition, metallo organic chemical vapor deposition, molecular beam epitaxy, sputtering, evaporating, spin-coating, electro-plating, or spray coating.

50. The MIMS of claim 29 wherein at least two sensors of the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor share a layer in common comprising at least one of silicon oxide, PSG (phosphosilicate glass), BSG (borosilicate glass), BPSG (Boron Phosphosilicate Glass), PECVD Oxide, TEOS (tetraethylorthosilicate), plasma assisted oxide, laser assisted CVD oxide, sputtered oxide, amorphous silicon, silicon nitride, silicon oxynitride, silicon carbide, silicon germanium, germanium, diamond, polymer, photoresist, or metals such as aluminum, gold, copper, silver, tungsten, nickel, titanium, chrome, platinum, or iridium.

51. The MIMS of claim 29 wherein at least three sensors of the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor share a layer in common comprising at least one of silicon oxide, PSG (phosphosilicate glass), BSG (borosilicate glass), BPSG (Boron Phosphosilicate Glass), PECVD Oxide, TEOS (tetraethylorthosilicate), plasma assisted oxide, laser assisted CVD oxide, sputtered oxide, amorphous silicon, silicon nitride, silicon oxynitride, silicon carbide, silicon germanium, germanium, diamond, polymer, photoresist, or metals such as aluminum, gold, copper, silver, tungsten, nickel, titanium, chrome, platinum, or iridium.

52. The MIMS of claim 29 wherein the magnetic sensor, the first MEMs sensor, the second MEMs sensor, or the third MEMs sensor share a layer in common comprising at least one of silicon oxide, PSG (phosphosilicate glass), BSG (borosilicate glass), BPSG (Boron Phosphosilicate Glass), PECVD Oxide, TEOS (tetraethylorthosilicate), plasma assisted oxide, laser assisted CVD oxide, sputtered oxide, amorphous silicon, silicon nitride, silicon oxynitride, silicon carbide, silicon germanium, germanium, diamond, polymer, photoresist, or metals such as aluminum, gold, copper, silver, tungsten, nickel, titanium, chrome, platinum, or iridium.

53. The MIMS of claim 29 wherein the first integrated circuit further includes electronic circuitry.

54. The MIMS of claim 29 wherein the second MEMs sensor is an infra-red sensor.

55. The MIMS of claim 29 wherein the second MEMs sensor is a humidity sensor.

56. The MIMS of claim 29 wherein the second MEMs sensor is a force sensor.

57. The MIMS of claim 29 wherein the second MEMs sensor is a transducer.

58. A monolithically integrated multi-sensor (MIMs) comprising:

a first integrated circuit comprising;

a magnetic sensor configured to measure a magnetic parameter; and

at least one MEMs sensor configured to measure a first parameter wherein the magnetic parameter and the first parameter are different and wherein the magnetic sensor and the at least one MEMs sensor are formed on or in a single semiconductor substrate.

59. The MIMs sensor of claim 58 wherein one of the magnetic sensor or the at least one MEMs sensor is sealed and wherein at least one of the magnetic sensor or the at least one MEMs sensor is exposed to the external environment.

60. The MIMs sensor of claim 58 wherein the first integrated circuit includes one or more deposited layers that seals a cavity of the magnetic sensor or the at least one MEMs sensor.

61. The MIMs sensor of claim 58 wherein the first integrated circuit includes one or more deposited layers that are etched.

62. The MIMs sensor of claim 58 wherein the first integrated circuit includes at least two deposited layer and wherein a portion of the at least two deposited layers have been removed from the first integrated circuit.

63. The MIMs of claim 58 wherein one or more deposited layers on the first integrated circuit includes an opening exposing at least one of the magnetic sensor or the at least one MEMs sensor.

64. The MIMS of claim 58 wherein one of the magnetic sensor or the at least one MEMs sensor comprises a first cavity having a fixed volume and wherein one of the magnetic sensor or the at least one MEMs sensor comprises a second cavity having a volume that is configured to vary according to stimulus.

65. The MIMS of claim 58 wherein the first integrated circuit includes one or more deposited layers that forms a cap on one of the magnetic sensor or the at least one MEMs sensor and wherein the one or more deposited layers forms a moving plate on one of the magnetic sensor or the at least one MEMs sensor.

66. The MIMS of claim 58 wherein the first integrated circuit includes one or more deposited layers that are configured to flex in one of the magnetic sensor or the at least one MEMs sensor and wherein the one or more deposited layers is configured not to flex one of the magnetic sensor or the at least one MEMs sensor.

67. The MIMS of claim 58 wherein one of the at least one MEMs sensor is an inertial sensor.

68. The MIMS of claim 58 wherein one the magnetic sensor or the at least one MEMs sensor is sealed at a different pressure than an external environment.

69. The MIMS of claim 58 wherein one of the magnetic sensor or the at least one MEMs sensor is sealed by two or more deposited layers on the first integrated circuit.

70. The MIMS of claim 58 wherein the first integrated circuit includes one or more deposited layers comprising silicon oxide, PSG (phosphosilicate glass), BSG (borosilicate glass), BPSG (Boron Phosphosilicate Glass), PECVD Oxide, TEOS (tetraethylorthosilicate), plasma assisted oxide, laser assisted CVD oxide, sputtered oxide, amorphous silicon, silicon nitride, silicon oxynitride, silicon carbide, silicon germanium, germanium, diamond, polymer, photoresist, or metals such as aluminum, gold, copper, silver, tungsten, nickel, titanium, chrome, platinum, or iridium.

71. The MIMS of claim 58 wherein at least one of the magnetic sensor or the at least one MEMs sensor is sealed by depositing the one or more deposited layers using low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, sub atmospheric chemical vapor deposition, physical vapor deposition, atomic layer deposition, metallo organic chemical vapor deposition, molecular beam epitaxy, sputtering, evaporating, spin-coating, electro-plating, or spray coating.

72. The MIMs of claim 58 wherein the at least one MEMs sensor comprises an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, or a biological sensor.

73. The MIMS of claim 58 wherein the at least one MEMs sensor comprises at least three MEMs sensors each measuring a different parameter.