Integrated device for temporal binning of received photons
First Claim
Patent Images
1. An integrated circuit, comprising:
- a photodetection region;
at least one charge carrier storage region;
a charge carrier segregation structure configured to;
remove, from the photodetection region, a first plurality of charge carriers generated therein by a first excitation light pulse, and discard the first plurality of charge carriers by preventing the first plurality of charge carriers from being stored in the at least one charge carrier storage region; and
following the removal of the first plurality of charge carriers generated by the first excitation light pulse, remove, from the photodetection region, a sensed charge carrier generated therein by a sensed photon, and direct the sensed charge carrier into the at least one charge carrier storage region prior to the photodetection region generating a second plurality of charge carriers by a second excitation light pulse; and
a readout circuit configured to read out a signal from the at least one charge carrier storage region,wherein the at least one charge carrier storage region comprises a plurality of charge carrier storage regions and the readout circuit is configured to read out signals from individual charge carrier storage regions of the plurality of charge carrier storage regions.
1 Assignment
0 Petitions
Accused Products
Abstract
An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit also includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced.
207 Citations
68 Claims
-
1. An integrated circuit, comprising:
-
a photodetection region; at least one charge carrier storage region; a charge carrier segregation structure configured to; remove, from the photodetection region, a first plurality of charge carriers generated therein by a first excitation light pulse, and discard the first plurality of charge carriers by preventing the first plurality of charge carriers from being stored in the at least one charge carrier storage region; and following the removal of the first plurality of charge carriers generated by the first excitation light pulse, remove, from the photodetection region, a sensed charge carrier generated therein by a sensed photon, and direct the sensed charge carrier into the at least one charge carrier storage region prior to the photodetection region generating a second plurality of charge carriers by a second excitation light pulse; and a readout circuit configured to read out a signal from the at least one charge carrier storage region, wherein the at least one charge carrier storage region comprises a plurality of charge carrier storage regions and the readout circuit is configured to read out signals from individual charge carrier storage regions of the plurality of charge carrier storage regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44)
-
-
45. An integrated circuit, comprising:
-
a photodetection region; at least one charge carrier storage region; and a charge carrier segregation structure configured to; remove, from the photodetection region, a first plurality of charge carriers generated therein by a first excitation light pulse, and discard the first plurality of charge carriers by preventing the first plurality of charge carriers from being stored in the at least one charge carrier storage region; and following the removal of the first plurality of charge carriers generated by the first excitation light pulse, remove, from the photodetection region, a sensed charge carrier generated therein by a sensed photon, and direct the sensed charge carrier into the at least one charge carrier storage region prior to the photodetection region generating a second plurality of charge carriers by a second excitation light pulse, wherein the charge carrier segregation structure comprises; a charge carrier travel region configured to receive the sensed charge carrier from the photodetection region, the charge carrier travel region comprising a semiconductor material; and a plurality of electrodes, wherein the integrated circuit further comprises a control circuit configured to capture the sensed charge carrier in the charge carrier travel region by changing a voltage of one or more electrodes of the plurality of electrodes, the sensed charge carrier then being a captured charge carrier, wherein the control circuit is configured to capture the sensed charge carrier by producing a potential barrier at a first location within the charge carrier travel region, wherein the control circuit is configured to produce the potential barrier by changing a voltage of a first electrode of the plurality of electrodes, and wherein the control circuit is configured to produce a second potential barrier at a second location within the charge carrier travel region by changing a voltage of a second electrode of the plurality of electrodes. - View Dependent Claims (46, 47, 48)
-
-
49. An integrated circuit, comprising:
-
a photodetection region; at least one charge carrier storage region; and a charge carrier segregation structure configured to; remove, from the photodetection region, a first plurality of charge carriers generated therein by a first excitation light pulse, and discard the first plurality of charge carriers by preventing the first plurality of charge carriers from being stored in the at least one charge carrier storage region; and following the removal of the first plurality of charge carriers generated by the first excitation light pulse, remove, from the photodetection region, a sensed charge carrier generated therein by a sensed photon, and direct the sensed charge carrier into the at least one charge carrier storage region prior to the photodetection region generating a second plurality of charge carriers by a second excitation light pulse, wherein the charge carrier segregation structure comprises; a charge carrier travel region configured to receive the sensed charge carrier from the photodetection region, the charge carrier travel region comprising a semiconductor material; and a plurality of electrodes, wherein the integrated circuit further comprises a control circuit configured to capture the sensed charge carrier in the charge carrier travel region by changing a voltage of one or more electrodes of the plurality of electrodes, the sensed charge carrier then being a captured charge carrier, wherein the control circuit is configured to transfer the captured charge carrier from the charge carrier travel region into a first charge carrier storage region of the at least one charge carrier storage region, wherein the control circuit is configured to transfer the captured charge carrier from the charge carrier travel region into the first charge carrier storage region by changing a voltage of at least one electrode overlying the charge carrier travel region, and wherein the control circuit is configured to transfer the captured charge carrier from the charge carrier travel region into the first charge carrier storage region by changing a voltage of a first electrode overlying the captured charge carrier and changing a voltage of a second electrode overlying the charge carrier travel region.
-
-
50. An integrated circuit, comprising:
-
a photodetection region; at least one charge carrier storage region; a charge carrier segregation structure configured to; remove, from the photodetection region, a first plurality of charge carriers generated therein by a first excitation light pulse, and discard the first plurality of charge carriers by preventing the first plurality of charge carriers from being stored in the at least one charge carrier storage region; and following the removal of the first plurality of charge carriers generated by the first excitation light pulse, remove, from the photodetection region, a sensed charge carrier generated therein by a sensed photon, and direct the sensed charge carrier into the at least one charge carrier storage region prior to the photodetection region generating a second plurality of charge carriers by a second excitation light pulse, wherein the integrated circuit comprises a plurality of pixels, wherein a first pixel of the plurality of pixels comprises; the photodetection region; the at least one charge carrier storage region; and the charge carrier segregation structure, wherein the photodetection region is a first photodetection region, the at least one charge carrier storage region is at least one first charge carrier storage region and the charge carrier segregation structure is a first charge carrier segregation structure, wherein the first pixel further comprises; a second photodetection region; at least one second charge carrier storage region; and a second charge carrier segregation structure. - View Dependent Claims (51)
-
-
52. An integrated circuit, comprising:
-
a photodetection region; at least one charge carrier storage region; and a charge carrier segregation structure configured to; remove, from the photodetection region, a first plurality of charge carriers generated therein by a first excitation light pulse, and discard the first plurality of charge carriers by preventing the first plurality of charge carriers from being stored in the at least one charge carrier storage region; and following the removal of the first plurality of charge carriers generated by the first excitation light pulse, remove, from the photodetection region, a sensed charge carrier generated therein by a sensed photon, and direct the sensed charge carrier into the at least one charge carrier storage region prior to the photodetection region generating a second plurality of charge carriers by a second excitation light pulse, the integrated circuit further comprising; a control circuit configured to control the charge carrier segregation structure to perform a measurement, the measurement comprising; a charge carrier capture phase in which the charge carrier segregation structure forms at least one potential barrier; and after the charge carrier capture phase, a charge carrier transfer phase in which a sensed charge carrier, if captured during the charge carrier capture phase, is transferred to the at least one charge carrier storage region, wherein the control circuit is configured to perform the measurement based on a timing of the first excitation light pulse, and wherein the control circuit is configured to control the charge carrier segregation structure to discard the first plurality of charge carriers produced in response to photons from the first excitation light pulse. - View Dependent Claims (53, 54, 55, 56)
-
-
54. The integrated circuit of claim 53, wherein the control circuit is configured to control the charge carrier segregation structure to perform each of the first and second measurements a plurality of times to aggregate the sensed charge carriers in the plurality of charge carrier storage regions.
-
55. The integrated circuit of claim 54, wherein the control circuit is configured to alternate between controlling the charge carrier segregation structure to perform the first measurement and controlling the charge carrier segregation structure to perform the second measurement.
-
56. The integrated circuit of claim 54, wherein the plurality of times is at least one thousand times.
-
57. An integrated circuit, comprising:
-
a photodetection region; at least one charge carrier storage region; and a charge carrier segregation structure configured to; remove, from the photodetection region, a first plurality of charge carriers generated therein by a first excitation light pulse of a first wavelength, and discard the first plurality of charge carriers by preventing the first plurality of charge carriers from being stored in the at least one charge carrier storage region; and following the removal of the first plurality of charge carriers generated by the first excitation light pulse, remove, from the photodetection region, a sensed charge carrier generated therein by a sensed photon, and direct the sensed charge carrier into the at least one charge carrier storage region prior to the photodetection region generating a second plurality of charge carriers by a second excitation light pulse, wherein the photodetection region is configured to receive, during a first time interval, at least one first photon emitted from a luminescent molecule in response to the first excitation light pulse, the photodetection region being configured to produce at least the sensed charge carrier in response to the at least one first photon, the sensed charge carrier being a first sensed charge carrier, and wherein the photodetection region is configured to receive, during a second time interval, at least one second photon emitted from a luminescent molecule in response to a second light excitation pulse of a second wavelength, the photodetection region being configured to produce at least a second sensed charge carrier in response to the at least one second photon. - View Dependent Claims (58)
-
-
59. An integrated circuit, comprising:
-
a photodetection region; at least one charge carrier storage region; and a charge carrier segregation structure configured to; remove, from the photodetection region, a first plurality of charge carriers generated therein by a first excitation light pulse, and discard the first plurality of charge carriers by preventing the first plurality of charge carriers from being stored in the at least one charge carrier storage region; and following the removal of the first plurality of charge carriers generated by the first excitation light pulse, remove, from the photodetection region, a sensed charge carrier generated therein by a sensed photon, and direct the sensed charge carrier into the at least one charge carrier storage region prior to the photodetection region generating a second plurality of charge carriers by a second excitation light pulse, the integrated circuit further comprising; a control circuit configured to control the charge carrier segregation structure to perform a measurement, the measurement comprising; a charge carrier capture phase in which the charge carrier segregation structure forms at least one potential barrier; and after the charge carrier capture phase, a charge carrier transfer phase in which a sensed charge carrier, if captured during the charge carrier capture phase, is transferred to the at least one charge carrier storage region, wherein the control circuit is configured to control the charge carrier segregation structure to change a timing, duration and/or number of time bins corresponding to the at least one charge carrier storage region. - View Dependent Claims (60, 61, 62)
-
-
63. An integrated circuit, comprising:
-
a photodetection region; at least one charge carrier storage region; and a charge carrier segregation structure configured to; remove, from the photodetection region, a first plurality of charge carriers generated therein by a first excitation light pulse, and discard the first plurality of charge carriers by preventing the first plurality of charge carriers from being stored in the at least one charge carrier storage region; and following the removal of the first plurality of charge carriers generated by the first excitation light pulse, remove, from the photodetection region, a sensed charge carrier generated therein by a sensed photon, and direct the sensed charge carrier into the at least one charge carrier storage region prior to the photodetection region generating a second plurality of charge carriers by a second excitation light pulse, wherein the integrated circuit is configured to receive incident photons from fluorophores, and wherein the fluorophores comprise a first fluorophore having a first fluorescent lifetime and a second fluorophore having a second fluorescent lifetime, wherein the integrated circuit is configured to produce information regarding the time of arrival of photons from the first fluorophore and information regarding the time of arrival of photons from the second fluorophore. - View Dependent Claims (64, 65, 66)
-
-
67. An integrated circuit, comprising:
-
a photodetection region; at least one charge carrier storage region; and a charge carrier segregation structure configured to; remove, from the photodetection region, a first plurality of charge carriers generated therein by a first excitation light pulse, and discard the first plurality of charge carriers by preventing the first plurality of charge carriers from being stored in the at least one charge carrier storage region; and following the removal of the first plurality of charge carriers generated by the first excitation light pulse, remove, from the photodetection region, a sensed charge carrier generated therein by a sensed photon, and direct the sensed charge carrier into the at least one charge carrier storage region prior to the photodetection region generating a second plurality of charge carriers by a second excitation light pulse, wherein the integrated circuit comprises a charge carrier confinement region comprising the photodetection region and a charge carrier travel region, wherein the photodetection region and the charge carrier travel region comprise a semiconductor material, and wherein a width of the photodetection region is tapered at an end of the photodetection region adjacent the charge carrier travel region.
-
-
68. An integrated circuit, comprising:
-
a photodetection region; at least one charge carrier storage region; and a charge carrier segregation structure configured to; remove, from the photodetection region, a first plurality of charge carriers generated therein by a first excitation light pulse, and discard the first plurality of charge carriers by preventing the first plurality of charge carriers from being stored in the at least one charge carrier storage region; and following the removal of the first plurality of charge carriers generated by the first excitation light pulse, remove, from the photodetection region, a sensed charge carrier generated therein by a sensed photon, and direct the sensed charge carrier into the at least one charge carrier storage region prior to the photodetection region generating a second plurality of charge carriers by a second excitation light pulse, wherein the integrated circuit comprises a charge carrier confinement region comprising the photodetection region and a charge carrier travel region, wherein the photodetection region and the charge carrier travel region comprise a semiconductor material, and wherein the at least one charge carrier storage region comprises a plurality of charge carrier storage regions and the charge carrier travel region includes a plurality of extensions of the charge carrier travel region individually extending to individual charge carrier storage regions of the plurality of charge carrier storage regions.
-
Specification