Systems and methods for reverse pulsing
First Claim
1. A method for operating a plasma chamber during plasma processing, the method comprising:
- receiving a digital signal, the digital signal having a first state and a second state;
generating a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal having a high state when the digital signal is in the first state and having a low state when the digital signal is in the second state, wherein the high state of the TCP RF pulsed signal has a higher amount of power than an amount of power of the low state of the TCP RF pulsed signal;
providing the TCP RF pulsed signal to one or more coils of the plasma chamber;
generating a bias RF pulsed signal having a low state when the digital signal is in the first state and having a high state when the digital signal is in the second state, wherein the high state of the bias RF pulsed signal has a higher amount of power than an amount of power of the low state of the bias RF pulsed signal, wherein generating the bias RF pulsed signal includes;
transitioning the bias RF pulsed signal from the high state to the low state at a time of transition of the TCP RF pulsed signal from the low state to the high state; and
transitioning the bias RF pulsed signal from the low state to the high state at a time of transition of the TCP RF pulsed signal from the high state to the low state; and
providing the bias RF pulsed signal to a chuck of the plasma chamber, wherein providing the TCP RF pulsed signal occurs while providing the bias RF pulsed signal, wherein said transitioning of the bias RF signal from the low state to the high state at the time of transition of the TCP RF pulsed signal from the high state to the low state is performed to increase vertical directionality of ions generated in the plasma chamber towards the chuck to process an etch operation of high aspect ratio features.
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Abstract
Systems and methods for reverse pulsing are described. One of the methods includes receiving a digital signal having a first state and a second state. The method further includes generating a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal having a high state when the digital signal is in the first state and having a low state when the digital signal is in the second state. The method includes providing the TCP RF pulsed signal to one or more coils of a plasma chamber, generating a bias RF pulsed signal having a low state when the digital signal is in the first state and having a high state when the digital signal is in the second state, and providing the bias RF pulsed signal to a chuck of the plasma chamber.
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Citations
17 Claims
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1. A method for operating a plasma chamber during plasma processing, the method comprising:
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receiving a digital signal, the digital signal having a first state and a second state; generating a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal having a high state when the digital signal is in the first state and having a low state when the digital signal is in the second state, wherein the high state of the TCP RF pulsed signal has a higher amount of power than an amount of power of the low state of the TCP RF pulsed signal; providing the TCP RF pulsed signal to one or more coils of the plasma chamber; generating a bias RF pulsed signal having a low state when the digital signal is in the first state and having a high state when the digital signal is in the second state, wherein the high state of the bias RF pulsed signal has a higher amount of power than an amount of power of the low state of the bias RF pulsed signal, wherein generating the bias RF pulsed signal includes; transitioning the bias RF pulsed signal from the high state to the low state at a time of transition of the TCP RF pulsed signal from the low state to the high state; and transitioning the bias RF pulsed signal from the low state to the high state at a time of transition of the TCP RF pulsed signal from the high state to the low state; and providing the bias RF pulsed signal to a chuck of the plasma chamber, wherein providing the TCP RF pulsed signal occurs while providing the bias RF pulsed signal, wherein said transitioning of the bias RF signal from the low state to the high state at the time of transition of the TCP RF pulsed signal from the high state to the low state is performed to increase vertical directionality of ions generated in the plasma chamber towards the chuck to process an etch operation of high aspect ratio features. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for operating a plasma chamber during processing, the method comprising:
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receiving a digital signal periodically transitioning between a first state and a second state; and providing a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal to one or more TCP coils of the plasma chamber and a bias RF pulsed signal to a chuck of the plasma chamber, wherein said providing the TCP RF pulsed signal includes synchronizing based on the digital signal a high state of the TCP RF pulsed signal with a low state of the bias RF pulsed signal and a low state of the TCP RF pulsed signal with a high state of the bias RF pulsed signal, wherein the high state of the TCP RF pulsed signal has a higher amount of power than an amount of power of the low state of the TCP RF pulsed signal, wherein the high state of the bias RF pulsed signal has a higher amount of power than an amount of power of the low state of the bias RF pulsed signal, wherein providing the TCP RF pulsed signal and the bias RF pulsed signal includes; transitioning the bias RF pulsed signal from the high state to the low state at a time of transition of the TCP RF pulsed signal from the low state to the high state; and transitioning the bias RF pulsed signal from the low state to the high state at a time of transition of the TCP RF pulsed signal from the high state to the low state, wherein said transitioning of the bias RF signal from the low state to the high state at the time of transition of the TCP RF pulsed signal from the high state to the low state is performed such that ions generated in the plasma chamber are influenced to have increased vertical directionality towards the chuck to process an etch operation of high aspect ratio features. - View Dependent Claims (15, 16, 17)
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Specification