Ball bonding metal wire bond wires to metal pads

• US 9,761,554 B2
• Filed: 07/10/2015
• Issued: 09/12/2017
• Est. Priority Date: 05/07/2015
• Status: Active Grant

• Current Assignee: Adeia Semiconductor Technologies LLC (f/k/a Invensas Corporation) (Adeia Inc.)
• Original Assignee: Adeia Semiconductor Technologies LLC (f/k/a Invensas Corporation) (Adeia Inc.)
• Inventors: Subido, Willmar, Co, Reynaldo, Zohni, Wael, Prabhu, Ashok S.
• Primary Examiner(s): Parker, Allen
• Assistant Examiner(s): Maruf, Sheikh
• Application Number:
  US14/796,745
• Publication Number:
  US 20160329294A1
• Time in Patent Office: 795 Days
• Field of Search: 257734-738, 257685-686, 257666, 257784, 257E2303, 257E215, 257E2151
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/43848 Thermal treatments, e.g. annealing, controlled cooling
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/45565 Single coating layer
• CPC Class Codes: H01L 2224/45572 Two-layer stack coating
• CPC Class Codes: H01L 2224/45616 Lead (Pb) as principal constituent
• CPC Class Codes: H01L 2224/45644 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45664 Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48229 the bond pad protruding from the surface of the item
• CPC Class Codes: H01L 2224/4845 Details of ball bonds
• CPC Class Codes: H01L 2224/48471 the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
• CPC Class Codes: H01L 2224/48479 : on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/48507 : comprising an intermetallic compound
• CPC Class Codes: H01L 2224/78301 : Capillary
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 2224/8501 : Cleaning, e.g. oxide removal step, desmearing
• CPC Class Codes: H01L 2224/85014 : Thermal cleaning, e.g. decomposition, sublimation
• CPC Class Codes: H01L 2224/85203 : Thermocompression bonding
• CPC Class Codes: H01L 2224/85205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/85207 : Thermosonic bonding
• CPC Class Codes: H01L 2224/85447 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01008 : Oxygen [O]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/20105 : Temperature range 150 C=<T<200 C, 423.15 K =< T < 473.15K
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

An apparatus, and methods therefor, relates generally to an integrated circuit package. In such an apparatus, a platform substrate has a copper pad. An integrated circuit die is coupled to the platform substrate. A wire bond wire couples a contact of the integrated circuit die and the copper pad. A first end of the wire bond wire is ball bonded with a ball bond for direct contact with an upper surface of the copper pad. A second end of the wire bond wire is stitch bonded with a stitch bond to the contact.

Claims

1. An apparatus for an integrated circuit package, comprising:

a platform substrate having a copper pad without having a lower melting point interface layer;

an integrated circuit die coupled to the platform substrate;

a wire bond wire coupling a contact of the integrated circuit die and the copper pad;

a first end of the wire bond wire being ball bonded with a ball bond for direct contact with an upper surface of the copper pad; and

a second end of the wire bond wire being stitch bonded with a stitch bond to the contact;

wherein;

the wire bond wire is of a bond via array;

a first portion of the upper surface of the copper pad has thereon an organic solderability preservative layer;

a second portion of the upper surface of the copper pad is bare for the direct contact of the ball bond formed of the wire bond wire; and

the ball bond is formed with a thermal budget in a range of approximately 150 to 175°

C.

2. The apparatus according to claim 1, wherein the wire bond wire is a lead coated copper wire.

3. The apparatus according to claim 1, wherein the wire bond wire is a bare copper wire.