CMOS-MEMS integration by sequential bonding method
First Claim
1. A method for bonding a first wafer and a second wafer, comprising:
- depositing a bond pad on a metal on the first wafer, the first surface of the bond pad in contact with the metal, the first wafer including an integrated circuit, and the second wafer including a MEMS device, wherein the bond pad comprises a germanium bond pad and the metal comprises aluminum;
positioning the second wafer in direct contact with a second surface of the bond pad opposite the first surface; and
sequentially bonding the first wafer to the second wafer utilizing first and second temperatures, wherein the second wafer is bonded to the bond pad at the first temperature and wherein the bond pad and the metal are bonded at the second temperature, wherein the bond between the germanium bond pad and the aluminum comprises a eutectic bond, and wherein a high temperature appealing of the second wafer is provided in a hydrogen environment before the second bonding step.
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Accused Products
Abstract
Methods for bonding two wafers are disclosed. In one aspect, a first wafer includes an integrated circuit and the second wafer including a MEMS device. The method comprises depositing a bond pad on a metal on the first wafer and sequentially bonding the first wafer to the second wafer utilizing first and second temperatures. The second wafer is bonded to the bond pad at the first temperature and the bond pad and the metal are bonded at the second temperature. In another aspect, a first wafer including an integrated circuit, the second wafer includes a MEMS device. The method comprises depositing a bond pad on a metal on one of the first wafer and the second wafer and bonding the first wafer to the second wafer at a first temperature via a direct bond interface. The method includes bonding the bond pad to the metal at a second temperature.
14 Citations
16 Claims
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1. A method for bonding a first wafer and a second wafer, comprising:
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depositing a bond pad on a metal on the first wafer, the first surface of the bond pad in contact with the metal, the first wafer including an integrated circuit, and the second wafer including a MEMS device, wherein the bond pad comprises a germanium bond pad and the metal comprises aluminum; positioning the second wafer in direct contact with a second surface of the bond pad opposite the first surface; and sequentially bonding the first wafer to the second wafer utilizing first and second temperatures, wherein the second wafer is bonded to the bond pad at the first temperature and wherein the bond pad and the metal are bonded at the second temperature, wherein the bond between the germanium bond pad and the aluminum comprises a eutectic bond, and wherein a high temperature appealing of the second wafer is provided in a hydrogen environment before the second bonding step. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for bonding a first wafer and a second wafer, comprising:
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depositing a bond pad on a metal on one of the first wafer and the second wafer, the first wafer including an integrated circuit, the second wafer including a MEMS device, wherein the bond pad comprises a germanium bond pad and the metal comprises aluminum; bonding the first wafer to the second wafer at a first temperature via a direct bond interface; and bonding the bond pad to the metal at a second temperature, wherein the bond between the germanium bond pad and the aluminum comprises a eutectic bond, and wherein a high temperature annealing of the second wafer is provided in a hydrogen environment before the second bonding step. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification