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Semiconductor device structures and methods of forming semiconductor structures

  • US 9,761,724 B2
  • Filed: 06/14/2016
  • Issued: 09/12/2017
  • Est. Priority Date: 06/21/2005
  • Status: Active Grant
First Claim
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1. A nonplanar transistor, comprising:

  • a semiconductor body disposed on and continuous with a bulk monocrystalline silicon substrate, without an intervening insulating layer disposed between the semiconductor body and the bulk monocrystalline silicon substrate, wherein the semiconductor body comprises inwardly tapered sidewalls between two ends of the semiconductor body; and

    a gate electrode disposed over the semiconductor body and between the two ends of the semiconductor body.

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