Semiconductor device structures and methods of forming semiconductor structures
First Claim
1. A nonplanar transistor, comprising:
- a semiconductor body disposed on and continuous with a bulk monocrystalline silicon substrate, without an intervening insulating layer disposed between the semiconductor body and the bulk monocrystalline silicon substrate, wherein the semiconductor body comprises inwardly tapered sidewalls between two ends of the semiconductor body; and
a gate electrode disposed over the semiconductor body and between the two ends of the semiconductor body.
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Abstract
A method of patterning a semiconductor film is described. According to an embodiment of the present invention, a hard mask material is formed on a silicon film having a global crystal orientation wherein the semiconductor film has a first crystal plane and second crystal plane, wherein the first crystal plane is denser than the second crystal plane and wherein the hard mask is formed on the second crystal plane. Next, the hard mask and semiconductor film are patterned into a hard mask covered semiconductor structure. The hard mask covered semiconductor structured is then exposed to a wet etch process which has sufficient chemical strength to etch the second crystal plane but insufficient chemical strength to etch the first crystal plane.
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Citations
16 Claims
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1. A nonplanar transistor, comprising:
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a semiconductor body disposed on and continuous with a bulk monocrystalline silicon substrate, without an intervening insulating layer disposed between the semiconductor body and the bulk monocrystalline silicon substrate, wherein the semiconductor body comprises inwardly tapered sidewalls between two ends of the semiconductor body; and a gate electrode disposed over the semiconductor body and between the two ends of the semiconductor body. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A nonplanar transistor, comprising:
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a semiconductor body disposed on and continuous with a semiconductor substrate, without an intervening insulating layer disposed between the semiconductor body and the semiconductor substrate, wherein the semiconductor body comprises inwardly tapered sidewalls between two ends of the semiconductor body; and a gate electrode disposed over the semiconductor body and between the two ends of the semiconductor body. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification