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High speed photosensitive devices and associated methods

  • US 9,761,739 B2
  • Filed: 12/22/2014
  • Issued: 09/12/2017
  • Est. Priority Date: 06/18/2010
  • Status: Active Grant
First Claim
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1. A high speed optoelectronic device for detecting infrared radiation, comprising:

  • a silicon material having a thickness in a range of about 1 micron to about 100 microns and having a surface for receiving incident radiation;

    a first doped region and a second doped region forming a semiconductive junction in the silicon material; and

    a textured region having nanosized features and coupled to the silicon material and positioned to interact with electromagnetic radiation;

    wherein the optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.

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