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Semiconductor laser diode on tiled gallium containing material

  • US 9,762,032 B1
  • Filed: 07/25/2016
  • Issued: 09/12/2017
  • Est. Priority Date: 02/07/2014
  • Status: Active Grant
First Claim
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1. A system comprising:

  • a laser diode device configured from a gallium and nitrogen containing semiconductor substrate, the gallium and nitrogen containing semiconductor substrate (“

    substrate”

    ) having a plurality of epitaxially grown layers overlaying a top-side of the substrate, the substrate being aligned to a spatial region configured in a selected direction of a first handle substrate, the substrate being bonded to a portion of a surface region of the first handle substrate using a first bonding medium provided between the first handle substrate and the substrate while maintaining alignment between a reference crystal orientation and the selected direction of the first handle substrate, the device comprising a metal contact and/or a metal bond pad formed to p-type and/or n-type gallium and nitrogen containing layers, wherein the reference crystal orientation for the substrate is substantially parallel to within 5 degrees or less to the spatial region configured in the selected direction.

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