Electro-optical modulator using waveguides with overlapping ridges
First Claim
1. An optical device, comprising:
- a first silicon waveguide disposed on a dielectric substrate, the first silicon waveguide comprising a first ridge extending in a direction of an optical path;
a dielectric layer having a lower surface disposed on an upper surface of the first ridge;
a second silicon waveguide disposed on an upper surface of the dielectric layer opposite the lower surface of the dielectric layer, the second silicon waveguide comprising a second ridge extending in the direction of the optical path, wherein the second ridge at least partially overlaps both the dielectric layer and the first ridge, and wherein the first silicon waveguide is doped a first conductivity type and the second silicon waveguide is doped a second, different conductivity type;
a first electrical contact coupled to the first silicon waveguide; and
a second electrical contact coupled to the second silicon waveguide,wherein the first electrical contact and a third electrical contact are coupled to a same side of the first silicon waveguide, wherein the second electrical contact and a fourth electrical contact are coupled to a same side of the second silicon waveguide, wherein the optical device is configured to receive a first voltage at the first and third electrical contacts and a second voltage at the second and fourth electrical contacts to generate a voltage potential that establishes a charge modulation region.
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Accused Products
Abstract
An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.
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Citations
15 Claims
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1. An optical device, comprising:
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a first silicon waveguide disposed on a dielectric substrate, the first silicon waveguide comprising a first ridge extending in a direction of an optical path; a dielectric layer having a lower surface disposed on an upper surface of the first ridge; a second silicon waveguide disposed on an upper surface of the dielectric layer opposite the lower surface of the dielectric layer, the second silicon waveguide comprising a second ridge extending in the direction of the optical path, wherein the second ridge at least partially overlaps both the dielectric layer and the first ridge, and wherein the first silicon waveguide is doped a first conductivity type and the second silicon waveguide is doped a second, different conductivity type; a first electrical contact coupled to the first silicon waveguide; and a second electrical contact coupled to the second silicon waveguide, wherein the first electrical contact and a third electrical contact are coupled to a same side of the first silicon waveguide, wherein the second electrical contact and a fourth electrical contact are coupled to a same side of the second silicon waveguide, wherein the optical device is configured to receive a first voltage at the first and third electrical contacts and a second voltage at the second and fourth electrical contacts to generate a voltage potential that establishes a charge modulation region. - View Dependent Claims (2, 3, 5, 6, 7, 8, 13)
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4. An optical device, comprising:
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a first silicon waveguide disposed on a dielectric substrate, the first silicon waveguide comprising a first ridge extending in a direction of an optical path; a dielectric layer having a lower surface disposed on an upper surface of the first ridge; a second silicon waveguide disposed on an upper surface of the dielectric layer opposite the lower surface of the dielectric layer, the second silicon waveguide comprising a second ridge extending in the direction of the optical path, wherein the second ridge at least partially overlaps both the dielectric layer and the first ridge, and wherein the first silicon waveguide is doped a first conductivity type and the second silicon waveguide is doped a second, different conductivity type; a first electrical contact coupled to the first silicon waveguide; and a second electrical contact coupled to the second silicon waveguide, wherein the first electrical contact and a third electrical contact are coupled to a same side of the first silicon waveguide, wherein the first ridge is centered on the first silicon waveguide in a direction perpendicular to the direction of the optical path and the first ridge is located between the first and third electrical contacts, wherein the first, second, and third electrical contacts are configured to generate a voltage potential that establishes a charge modulation region comprising at least respective portions of the first ridge, the dielectric layer, and the second silicon waveguide. - View Dependent Claims (14)
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9. An optical device, comprising:
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a first waveguide disposed on a substrate, the first waveguide comprising a first ridge extending in a direction of an optical path; a second waveguide disposed above an upper surface of the first ridge opposite a lower surface of the first waveguide contacting the substrate, the second waveguide comprising a second ridge extending in the direction of the optical path, wherein the second ridge at least partially overlaps the first ridge in a first direction perpendicular to the direction of the optical path, and wherein the first waveguide is doped a first conductivity type and the second waveguide is doped a second, different conductivity type; a first electrical contact coupled to the first waveguide; and a second electrical contact coupled to the second waveguide, wherein the first electrical contact and a third electrical contact are coupled to a same side of the first waveguide, wherein the second electrical contact and a fourth electrical contact are coupled to a same side of the second waveguide, wherein the optical device is configured to receive a first voltage at the first and third electrical contacts and a second voltage at the second and fourth electrical contacts to generate a voltage potential that establishes a charge modulation region. - View Dependent Claims (10, 11, 12, 15)
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Specification