Removal methods for high aspect ratio structures
First Claim
1. An etching method comprising:
- flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber;
forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor;
flowing the plasma effluents into a processing region of the semiconductor processing chamber, wherein the processing region houses a substrate comprising a region of exposed oxide;
providing a hydrogen-containing precursor to the processing region;
removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region below about 50%;
subsequent the removing at least a portion of the exposed oxide, increasing the relative humidity within the processing region to greater than or about 50%; and
removing an additional amount of the exposed oxide.
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Abstract
Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region below about 50%. Subsequent to the removal, the methods may include increasing the relative humidity within the processing region to greater than or about 50%. The methods may further include removing an additional amount of the exposed oxide.
1536 Citations
20 Claims
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1. An etching method comprising:
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flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber; forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor; flowing the plasma effluents into a processing region of the semiconductor processing chamber, wherein the processing region houses a substrate comprising a region of exposed oxide; providing a hydrogen-containing precursor to the processing region; removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region below about 50%; subsequent the removing at least a portion of the exposed oxide, increasing the relative humidity within the processing region to greater than or about 50%; and removing an additional amount of the exposed oxide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A cleaning method comprising:
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flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber while forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor; flowing the plasma effluents into a processing region of the semiconductor processing chamber, wherein the processing region houses a substrate comprising a high-aspect-ratio feature having a region of exposed oxide; while flowing the plasma effluents into the processing region, providing a hydrogen-containing precursor to the processing region; removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region at greater than or about 50%; subsequent the removing at least a portion of the exposed oxide, increasing a flow rate of the fluorine-containing precursor while maintaining the relative humidity within the processing region at greater than or about 50%; and removing an additional amount of the exposed oxide. - View Dependent Claims (15, 16, 17, 18)
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19. A removal method comprising:
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flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber while forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor; flowing the plasma effluents into a processing region of the semiconductor processing chamber, wherein the processing region houses a substrate comprising a high-aspect-ratio feature having a region of exposed oxide; while flowing the plasma effluents into the processing region, providing a hydrogen-containing precursor to the processing region; continuing to flow the plasma effluents and the hydrogen-containing precursor into the processing region for at least about 200 seconds; and removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region at greater than or about 50%. - View Dependent Claims (20)
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Specification