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Removal methods for high aspect ratio structures

  • US 9,768,034 B1
  • Filed: 11/11/2016
  • Issued: 09/19/2017
  • Est. Priority Date: 11/11/2016
  • Status: Active Grant
First Claim
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1. An etching method comprising:

  • flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber;

    forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor;

    flowing the plasma effluents into a processing region of the semiconductor processing chamber, wherein the processing region houses a substrate comprising a region of exposed oxide;

    providing a hydrogen-containing precursor to the processing region;

    removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region below about 50%;

    subsequent the removing at least a portion of the exposed oxide, increasing the relative humidity within the processing region to greater than or about 50%; and

    removing an additional amount of the exposed oxide.

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