Semiconductor device having diode characteristic

• US 9,768,248 B2
• Filed: 01/26/2017
• Issued: 09/19/2017
• Est. Priority Date: 12/15/2009
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kitagawa, Mitsuhiko
• Primary Examiner(s): Nicely, Joseph C
• Application Number:
  US15/416,215
• Publication Number:
  US 20170133456A1
• Time in Patent Office: 236 Days
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/0814 Diodes only
• CPC Class Codes: H01L 29/063 Reduced surface field [RESURF] pn-junction structures
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0638 for preventing surface leakage due to surface inversion layer, e.g. with channel stopper channel stoppers in combination with isolation region for integrated circuits H01L21/762
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/41 characterised by their shape, relative sizes or dispositions
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7804 the other device being a pn-junction diode
• CPC Class Codes: H01L 29/7805 in antiparallel, e.g. freewheel diode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/861 Diodes
• CPC Class Codes: H01L 29/8611 Planar PN junction diodes

Abstract

According to one embodiment, a semiconductor device is provided. The semiconductor device has a first region formed of semiconductor and a second region formed of semiconductor which borders the first region. An electrode is formed to be in ohmic-connection with the first region. A third region is formed to sandwich the first region. A first potential difference is produced between the first and the second regions in a thermal equilibrium state, according to a second potential difference between the third region and the first region.

Claims

1. A semiconductor device, comprising:

a first drift layer comprising a plurality of first layer portions of a first conductivity type and a plurality of second layer portions of a second conductivity type, the plurality of first layer portions alternating with the plurality of second layer portions along a first direction;

a first contact layer comprising a plurality of third layer portions of the first conductivity type and a plurality of fourth layer portions of the second conductivity type, the plurality of third layer portions alternating with the plurality of fourth layer portions along the first direction;

a first electrode in ohmic-connection with the first semiconductor drift layer; and

a second electrode having a first portion which is adjacent the first drift layer and a first portion of the first contact layer via an insulating film and a second portion which is directly contacting a side surface and an upper surface of a second portion of the first contact layer, the first portion of the first contact layer being between the second portion of the first contact layer and the first electrode, wherein

the plurality of third layer portions have an impurity concentration that is different from an impurity concentration of the plurality of first layer portions,

the plurality of fourth layer portions have an impurity concentration that is different from an impurity concentration of the plurality of second layer portions,

an end, along a second direction crossing the first direction, of each third layer portion in the plurality of third layer portions is contacting an end, along the second direction, of a corresponding one of a first layer portion in the plurality of first layer portions, and

an end, along the second direction, of each fourth layer portion in the plurality of fourth layer portions is contacting an end, along the second direction, of a corresponding one of a second layer portion in the plurality of second layer portions.

2. The semiconductor device according to claim 1, wherein

the impurity concentration of the plurality of third layer portions is greater than the impurity concentration of the plurality of first layer portions, and

the impurity concentration of the plurality of fourth layer portions is greater than the impurity concentration of the plurality of second layer portions.

3. The semiconductor device according to claim 1, wherein

each third layer portion in the plurality of third layer portions has a width along the first direction that is less than a width of each fourth layer portion in the plurality of fourth layer portions along the first direction, and

each first layer portion in the plurality of first layer portions has a width along the first direction that is substantially equal to a width of each second layer portion in the plurality of second layer portions along the first direction.

4. The semiconductor device according to claim 1, further comprising:

a second drift layer comprising a plurality of fifth layer portions of the first conductivity type and a plurality of sixth layer portions of the second conductivity type, the plurality of fifth layer portions alternating with the plurality of sixth layer portions along the first direction, the second drift layer being between the first drift layer and the first electrode, wherein

each third layer portion in the plurality of third layer portions has a width along the first direction that is substantially equal to a width of each fourth layer portion in the plurality of fourth layer portions along the first directions,

each first layer portion in the plurality of first layer portions has a width along the first direction that is less than a width of each second layer portion in the plurality of second layer portions along the first direction, and

each fifth layer portion in the plurality of fifth layer portions has a width along the first direction that is substantially equal to a width of each sixth layer portion in the plurality of sixth layer portions along the first direction.

5. The semiconductor device according to claim 4, wherein

an end, along the second direction, of each fifth layer portion in the plurality of fifth layer portions is contacting a first layer portion in the plurality of first layer portions, and

an end, along the second direction, of each sixth layer portion in the plurality of sixth layer portions is contacting a second layer portion in the plurality of second layer portions.

6. The semiconductor device according to claim 1, wherein the first portion of second electrode comprises a plurality of trench portions that extend in the first direction toward the first electrode and into the first drift layer such that the first contact layer and a portion of the first drift layer are disposed between adjacent trench portions of the second electrode.

7. The semiconductor device according to claim 6, wherein an insulating film is between the plurality of trench portions and the first drift layer.

8. The semiconductor device according to claim 6, further comprising:

a gate electrode disposed between at least one adjacent pair of the plurality of trench portions of the second electrode.

9. The semiconductor device according to claim 1, further comprising:

an insulating layer on which the first drift layer and the first contact layer are disposed.

10. The semiconductor device according to claim 9, wherein

each third layer portion in the plurality of third layer portions has a width along the first direction that is less than a width of each fourth layer portion in the plurality of fourth layer portions along the first direction, and

each first layer portion in the plurality of first layer portions has a width along the first direction that is substantially equal to a width of each second layer portion in the plurality of second layer portions along the first direction.

11. The semiconductor device according to claim 9, further comprising:

a second drift layer comprising a plurality of fifth layer portions of the first conductivity type and a plurality of sixth layer portions of the second conductivity type, the plurality of fifth layer portions alternating with the plurality of sixth layer portions along the first direction, the second drift layer being between the first drift layer and the first electrode, wherein

each third layer portion in the plurality of third layer portions has a width along the first direction that is substantially equal to a width of each fourth layer portion in the plurality of fourth layer portions along the first directions,

each first layer portion in the plurality of first layer portions has a width along the first direction that is less than a width of each second layer portion in the plurality of second layer portions along the first direction, and

each fifth layer portion in the plurality of fifth layer portions has a width along the first direction that is substantially equal to a width of each sixth layer portion in the plurality of sixth layer portions along the first direction.

12. The semiconductor device according to claim 11, wherein

an end, along the second direction, of each fifth layer portion in the plurality of fifth layer portions is contacting a first layer portion in the plurality of first layer portions, and

an end, along the second direction, of each sixth layer portion in the plurality of sixth layer portions is contacting a second layer portion in the plurality of second layer portions.