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Methods, devices, and systems related to forming semiconductor power devices with a handle substrate

  • US 9,768,271 B2
  • Filed: 02/22/2013
  • Issued: 09/19/2017
  • Est. Priority Date: 02/22/2013
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • forming a semiconductor device assembly that includes;

    a handle substrate;

    a semiconductor structure having a first side, a second side opposite the first side, and a gate region, wherein the gate region is between the source and drain regions of a transistor device; and

    an intermediary material between the semiconductor structure and the handle substrate;

    removing material from the semiconductor structure to form an opening extending from the first side of the semiconductor structure to at least the intermediary material at the second side of the semiconductor structure, wherein the opening extends through the gate region; and

    decoupling the semiconductor structure from the handle substrate, wherein decoupling the semiconductor structure includes;

    attaching a transfer structure to the semiconductor structure at the first side and such that a portion of the transfer structure extends across, and thereby completely covers, the opening; and

    removing at least a portion of the intermediary material via the opening in the gate region of the semiconductor structure to undercut the second side of the semiconductor structure, wherein removing the intermediary material includes exposing the intermediary material to an etchant via the opening and by flowing the etchant between the portion of the transfer structure and a portion of the handle substrate facing the portion of the transfer structure across the opening.

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