Proximity detector device with interconnect layers and related methods

• US 9,768,341 B2
• Filed: 04/23/2014
• Issued: 09/19/2017
• Est. Priority Date: 04/28/2013
• Status: Active Grant

• Current Assignee: STMicroelectronics Incorporated (STMicroelectronics NV)
• Original Assignee: STMicroelectronics Incorporated (STMicroelectronics NV)
• Inventors: Luan, Jing-En
• Primary Examiner(s): Vu, David
• Assistant Examiner(s): INOUSSA, MOULOUCOULAY
• Application Number:
  US14/259,344
• Publication Number:
  US 20140319548A1
• Time in Patent Office: 1,245 Days
• Field of Search: 257 82, 257774, 257432, 438 25, 356614
• CPC Class Codes: G01S 17/04 Systems determining the presence of a target
• CPC Class Codes: G01S 17/08 for measuring distance only indirect measurement G01S17/46; active triangulation systems G01S17/48
• CPC Class Codes: G01S 7/4813 Housing arrangements
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 24/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/173 formed in, or on, a common substrate

Abstract

A proximity detector device may include a first interconnect layer including a first dielectric layer, and first electrically conductive traces carried thereby, an IC layer above the first interconnect layer and having an image sensor IC, and a light source IC laterally spaced from the image sensor IC. The proximity detector device may include a second interconnect layer above the IC layer and having a second dielectric layer, and second electrically conductive traces carried thereby. The second interconnect layer may have first and second openings therein respectively aligned with the image sensor IC and the light source IC. Each of the image sensor IC and the light source IC may be coupled to the first and second electrically conductive traces. The proximity detector device may include a lens assembly above the second interconnect layer and having first and second lenses respectively aligned with the first and second openings.

Claims

1. A proximity detector device comprising:

a first interconnect layer comprising a first dielectric layer, and a plurality of first electrically conductive traces carried thereby;

an integrated circuit (IC) layer above said first interconnect layer and comprising

an image sensor IC, and

a light source IC laterally spaced from said image sensor IC;

a second interconnect layer above said IC layer and comprising a second dielectric layer, and a plurality of second electrically conductive traces carried thereby, said second interconnect layer having first and second openings therein respectively aligned with said image sensor IC and said light source IC, the first and second openings having sidewalls being defined by the second dielectric layer;

said first interconnect layer being separate from and spaced apart from said second interconnect layer;

each of said image sensor IC and said light source IC coupled to said pluralities of first and second electrically conductive traces;

a lens assembly above said second interconnect layer and comprising first and second lenses respectively aligned with said first and second openings; and

a transparent adhesive material, separate from the second dielectric layer and the first and second lenses, completely filling the first and second openings of the second interconnect layer and contacting each of the image sensor IC and light source IC.

2. The proximity detector device of claim 1 wherein said IC layer comprises encapsulation material laterally surrounding said image sensor IC and said light source IC.

3. The proximity detector device of claim 2 wherein said encapsulation material comprises a plurality electrically conductive vias, each coupled between a respective aligned pair of said pluralities of first and second electrically conductive traces.

4. The proximity detector device of claim 1 wherein said lens assembly further comprises a molding compound surrounding said first and second lenses, and having first and second openings aligned with respective ones of said first and second lenses.

5. The proximity detector device of claim 1 wherein said first lens comprises a filter lens.

6. The proximity detector device of claim 1 wherein said light source IC comprises a light emitting diode.

14. The proximity detector device of claim 1 wherein said pluralities of first and second electrically conductive traces are coupled together.

15. The proximity detector device of claim 4, wherein a portion of the transparent adhesive material extends out of the second interconnect layer and is surrounded by the molding compound.

7. A proximity detector device comprising:

a first interconnect layer comprising a first dielectric layer, and a plurality of first electrically conductive traces carried thereby;

a plurality of contacts coupled respectively to said plurality of first electrically conductive traces;

an integrated circuit (IC) layer above said first interconnect layer and comprising

an image sensor IC,

a light source IC laterally spaced from said image sensor IC, and

encapsulation material laterally surrounding said image sensor IC and said light source IC;

a second interconnect layer above said IC layer and comprising a second dielectric layer, and a plurality of second electrically conductive traces carried thereby, said second interconnect layer having first and second openings therein having sidewalls defined by material of the second dielectric layer and respectively aligned with said image sensor IC and said light source IC;

said first interconnect layer being separate from and spaced apart from said second interconnect layer;

each of said image sensor IC and said light source IC coupled to said pluralities of first and second electrically conductive traces;

a lens assembly above said second interconnect layer and comprising first and second lenses respectively aligned with said first and second openings; and

a transparent adhesive material completely filling the first and second openings of the second interconnect layer and contacting the image sensor IC and light source IC, the transparent adhesive material having a first surface adhered to the first and second lenses.

8. The proximity detector device of claim 7 wherein said encapsulation material comprises a plurality electrically conductive vias, each coupled between a respective aligned pair of said pluralities of first and second electrically conductive traces.

9. The proximity detector device of claim 7 wherein said lens assembly further comprises a molding compound surrounding said first and second lenses, and having first and second openings aligned with respective ones of said first and second lenses.

16. The proximity detector device of claim 7, wherein a second surface of the transparent adhesive material is adhered to a portion of the image sensor IC and a portion of the light source IC.

17. The proximity detector device of claim 7, wherein the transparent adhesive material is distinct from the second dielectric layer and the first and second lenses.

18. The proximity detector device of claim 9, wherein the molding compound surrounds a portion of the transparent adhesive material extending out of the second interconnect layer.

10. A method of making a proximity detector device comprising:

forming a first interconnect layer comprising a first dielectric layer, and a plurality of first electrically conductive traces carried thereby;

forming an integrated circuit (IC) layer above the first interconnect layer and comprising

an image sensor IC, and

a light source IC laterally spaced from the image sensor IC;

forming a second interconnect layer above the IC layer and comprising a second dielectric layer, and a plurality of second electrically conductive traces carried thereby, the second interconnect layer having first and second openings therein having sidewalls defined by dielectric material of the second dielectric layer and respectively aligned with the image sensor IC and the light source IC, each of the image sensor IC and the light source IC coupled to the pluralities of first and second electrically conductive traces, the first interconnect layer being separate from and spaced apart from the second interconnect layer;

completely filling the first and second openings of the second interconnect layer with a transparent adhesive material, the transparent adhesive material contacting the image sensor IC and light source IC; and

forming a lens assembly above the second interconnect layer and comprising first and second lenses respectively aligned with the first and second openings and adhered to a first surface of the transparent adhesive material.

11. The method of claim 10 wherein the forming of the IC layer comprises forming encapsulation material to laterally surround the image sensor IC and the light source IC.

12. The method of claim 11 wherein the forming of the IC layer comprises forming a plurality electrically conductive vias in the encapsulation material, each electrically conductive via coupled between a respective aligned pair of the pluralities of first and second electrically conductive traces.

13. The method of claim 10 wherein the forming of the lens assembly further comprises forming a molding compound to surround the first and second lenses, and to have first and second openings aligned with respective ones of the first and second lenses.

19. The method of claim 10, wherein a second surface of the transparent adhesive material is adhered to a portion of the image sensor IC and a portion of the light source IC.

20. The method of claim 13, wherein a first portion of the transparent adhesive material is surrounded by the second dielectric layer, and wherein a second portion of the transparent adhesive material is surrounded by molding compound.