Solid-state image pickup device, driving method thereof, and electronic apparatus
First Claim
1. A solid-state image pickup device comprising:
- a photoelectric conversion element formed in a substrate, wherein the photoelectric conversion element generates charges according to a quantity of incident light, and wherein the charges are accumulated inside the photoelectric conversion element;
a charge transfer section that transfers the charges accumulated by the photoelectric conversion element, wherein the charge transfer section includes a portion of the substrate having a first charge type;
a charge voltage conversion section that converts the charges transferred by the charge transfer section into a voltage, wherein the charge voltage conversion section includes a portion of the substrate having a second charge type; and
a MOS capacitor that connects the charge voltage conversion section and a substrate electrode formed in the substrate via a transistor,wherein a gate electrode of the MOS capacitor is applied with a voltage that is different in a read period of the voltage signal converted by the charge voltage conversion section than in a period other than the read period.
1 Assignment
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Accused Products
Abstract
A photoelectric conversion element that generates charges according to a light quantity of incident light and accumulates the charges in the inside thereof, a transfer transistor (TRG) that transfers the charges accumulated by the photoelectric conversion element, a first charge voltage conversion section that converts the charges transferred by the transfer transistor (TRG) into a voltage, and a substrate electrode of a MOS capacitor (a region of a second charge voltage conversion section facing a gate electrode) that connects the first charge voltage conversion section via a connection transistor (FDG). The gate electrode of the MOS capacitor is applied with a voltage that is different in a read period of the voltage signal converted by the first charge voltage conversion section and in a period other than the read period. The present disclosure can also be applied to a CMOS image sensor or the like.
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Citations
14 Claims
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1. A solid-state image pickup device comprising:
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a photoelectric conversion element formed in a substrate, wherein the photoelectric conversion element generates charges according to a quantity of incident light, and wherein the charges are accumulated inside the photoelectric conversion element; a charge transfer section that transfers the charges accumulated by the photoelectric conversion element, wherein the charge transfer section includes a portion of the substrate having a first charge type; a charge voltage conversion section that converts the charges transferred by the charge transfer section into a voltage, wherein the charge voltage conversion section includes a portion of the substrate having a second charge type; and a MOS capacitor that connects the charge voltage conversion section and a substrate electrode formed in the substrate via a transistor, wherein a gate electrode of the MOS capacitor is applied with a voltage that is different in a read period of the voltage signal converted by the charge voltage conversion section than in a period other than the read period. - View Dependent Claims (2, 3, 4, 5, 6, 14)
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7. A driving method of a solid-state image pickup device including a photoelectric conversion element formed in a substrate that generates charges according to a quantity of incident light and accumulates the charges in the inside thereof, a charge transfer section that transfers the charges accumulated by the photoelectric conversion element, wherein the charge transfer section includes a portion of the substrate having a first charge type, a charge voltage conversion section that converts the charges transferred by the charge transfer section into a voltage, wherein the charge voltage conversion section includes a portion of the substrate having a second charge type, and a MOS capacitor that connects the charge voltage conversion section and a substrate electrode formed in the substrate via a transistor, the method comprising:
applying a voltage, which is different in a read period of the voltage signal converted by the charge voltage conversion section than in a period other than the read period, to a gate electrode of the MOS capacitor.
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8. An electronic apparatus comprising:
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a photoelectric conversion element formed in a substrate, wherein the photoelectric conversion element generates charges according to a quantity of incident light, and wherein the charges are accumulated inside the photoelectric conversion element; a charge transfer section that transfers the charges accumulated by the photoelectric conversion element, wherein the charge transfer section includes a portion of the substrate having a first charge type; a charge voltage conversion section that converts the charges transferred by the charge transfer section into a voltage, wherein the charge voltage conversion section includes a portion of the substrate having a second charge type; and a MOS capacitor that connects the charge voltage conversion section and a substrate electrode formed in the substrate via a transistor, wherein a gate electrode of the MOS capacitor is applied with a voltage that is different in a read period of the voltage signal converted by the charge voltage conversion section than in a period other than the read period.
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9. A solid-state image pickup device comprising:
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a photoelectric conversion element that generates charges according to a light quantity of incident light and accumulates the charges in the inside thereof; a charge transfer section that transfers the charges accumulated by the photoelectric conversion element; a charge voltage conversion section that converts the charges transferred by the charge transfer section into a voltage; and a MOS capacitor that connects the charge voltage conversion section and a substrate electrode via a transistor, wherein the substrate electrode of the MOS capacitor is applied with a voltage that is different in a read period of the voltage signal converted by the charge voltage conversion section and in a period other than the read period. - View Dependent Claims (10, 11)
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12. A driving method of a solid-state image pickup device including a photoelectric conversion element formed in a substrate that generates charges according to a quantity of incident light and accumulates the charges in the inside thereof, a charge transfer section that transfers the charges accumulated by the photoelectric conversion element, wherein the charge transfer section includes a portion of the substrate having a first charge type, a charge voltage conversion section that converts the charges transferred by the charge transfer section into a voltage, wherein the charge voltage conversion section includes a portion of the substrate having a second charge type, and a MOS capacitor that connects the charge voltage conversion section and a substrate electrode formed in the substrate via a transistor, the method comprising:
applying a voltage, which is different in a read period of the voltage signal converted by the charge voltage conversion section than in a period other than the read period, to the substrate electrode of the MOS capacitor.
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13. An electronic apparatus comprising:
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a photoelectric conversion element formed in a substrate, wherein the photoelectric conversion element generates charges according to a quantity of incident light, and wherein the charges are accumulated inside the photoelectric conversion element; a charge transfer section that transfers the charges accumulated by the photoelectric conversion element, wherein the charge transfer section includes a portion of the substrate having a first charge type; a charge voltage conversion section that converts the charges transferred by the charge transfer section into a voltage, wherein the charge voltage conversion section includes a portion of the substrate having a second charge type; and a MOS capacitor that connects the charge voltage conversion section and a substrate electrode formed in the substrate via a transistor, wherein the substrate electrode of the MOS capacitor is applied with a voltage that is different in a read period of the voltage signal converted by the charge voltage conversion section than in a period other than the read period.
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Specification