Defect reduction in seeded aluminum nitride crystal growth
First Claim
Patent Images
1. A method for growing single-crystal aluminum nitride (AlN), the method comprising:
- mounting an AlN seed on a seed holder, thereby forming a seed-seed holder assembly;
disposing the seed-seed holder assembly within a crystal-growth crucible;
heating the crystal-growth crucible to apply thereto (i) a radial thermal gradient of less than 50°
C./cm and (ii) a vertical thermal gradient greater than 1°
C./cm and less than 50°
C./cm; and
depositing aluminum and nitrogen onto the AlN seed under conditions suitable for growing single-crystal AlN originating at the AlN seed.
2 Assignments
0 Petitions
Accused Products
Abstract
Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
246 Citations
40 Claims
-
1. A method for growing single-crystal aluminum nitride (AlN), the method comprising:
-
mounting an AlN seed on a seed holder, thereby forming a seed-seed holder assembly; disposing the seed-seed holder assembly within a crystal-growth crucible; heating the crystal-growth crucible to apply thereto (i) a radial thermal gradient of less than 50°
C./cm and (ii) a vertical thermal gradient greater than 1°
C./cm and less than 50°
C./cm; anddepositing aluminum and nitrogen onto the AlN seed under conditions suitable for growing single-crystal AlN originating at the AlN seed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40)
-
Specification