Dual discharge modes operation for remote plasma
First Claim
1. A method of processing a semiconductor substrate, the method comprising:
- flowing a gas through a cavity defined by a powered electrode;
applying a negative voltage to the powered electrode;
striking a hollow cathode discharge in the cavity to form hollow cathode discharge effluents from the gas;
flowing the hollow cathode discharge effluents to a processing region through a plurality of apertures defined by an electrically grounded electrode; and
reacting the hollow cathode discharge effluents with the semiconductor substrate in the processing region, wherein;
applying the negative voltage comprises applying the negative voltage through an electronic ballast, andthe electronic ballast has a frequency of less than about 1 MHz.
1 Assignment
0 Petitions
Accused Products
Abstract
Embodiments of the present technology may include a method of processing a semiconductor substrate. The method may include providing the semiconductor substrate in a processing region. Additionally, the method may include flowing gas through a cavity defined by a powered electrode. The method may further include applying a negative voltage to the powered electrode. Also, the method may include striking a hollow cathode discharge in the cavity to form hollow cathode discharge effluents from the gas. The hollow cathode discharge effluents may then be flowed to the processing region through a plurality of apertures defined by electrically grounded electrode. The method may then include reacting the hollow cathode discharge effluents with the semiconductor substrate in the processing region.
-
Citations
20 Claims
-
1. A method of processing a semiconductor substrate, the method comprising:
-
flowing a gas through a cavity defined by a powered electrode; applying a negative voltage to the powered electrode; striking a hollow cathode discharge in the cavity to form hollow cathode discharge effluents from the gas; flowing the hollow cathode discharge effluents to a processing region through a plurality of apertures defined by an electrically grounded electrode; and reacting the hollow cathode discharge effluents with the semiconductor substrate in the processing region, wherein; applying the negative voltage comprises applying the negative voltage through an electronic ballast, and the electronic ballast has a frequency of less than about 1 MHz. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 19, 20)
-
-
12. A method of processing a semiconductor substrate, the method comprising:
-
flowing a gas to a processing region; striking a hollow cathode discharge to form hollow cathode discharge effluents from the gas; reacting hollow cathode discharge effluents with the semiconductor substrate in the processing region; striking a glow discharge to form glow discharge effluents from the gas; and reacting the glow discharge effluents with the semiconductor substrate in the processing region, wherein; striking the hollow cathode discharge comprises applying a negative voltage to a powered electrode through an electronic ballast, and the electronic ballast has a frequency of less than about 1 MHz. - View Dependent Claims (13, 14, 15)
-
-
16. A system for processing a semiconductor substrate, the system comprising:
-
a powered electrode electrically coupled with an electronic ballast; a conical cavity defined by the powered electrode, wherein the conical cavity is characterized by a narrower diameter end and a wider diameter end; a power supply electrically coupled with the electronic ballast, wherein the power supply is configured to deliver a negative voltage at a frequency below about 1 MHz to the powered electrode to strike a hollow cathode discharge in the conical cavity; a gas inlet connected to the narrower diameter end of the conical cavity; and an electrically grounded electrode defining a plurality of apertures, wherein; the electrically grounded electrode is disposed closer to the wider diameter end of the conical cavity than the narrower diameter end of the conical cavity, the electrically grounded electrode has a first surface and a second surface, the first surface and the second surface are substantially flat, and the first surface is parallel to the second surface. - View Dependent Claims (17, 18)
-
Specification