Composition for manufacturing semiconductor device and method of manufacturing semiconductor device using the composition

• US 9,773,673 B2
• Filed: 05/06/2016
• Issued: 09/26/2017
• Est. Priority Date: 08/24/2015
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Park, Jin, Kim, Hyun-woo, Kim, Myeong-koo
• Primary Examiner(s): Ho, Anthony
• Application Number:
  US15/148,622
• Publication Number:
  US 20170062217A1
• Time in Patent Office: 508 Days
• Field of Search: 257 40
• CPC Class Codes: C08G 73/08 Polyhydrazides; Polytriazoles; Polyaminotriazoles; Polyoxadiazoles
• CPC Class Codes: C08G 73/1042 Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
• CPC Class Codes: C08G 73/1067 Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
• CPC Class Codes: C09D 179/08 Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
• CPC Class Codes: G03F 7/091 characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• CPC Class Codes: G03F 7/094 Multilayer resist systems, e.g. planarising layers
• CPC Class Codes: G03F 7/11 having cover layers or intermediate layers, e.g. subbing layers G03F7/091 - G03F7/093, B41N3/03 take precedence
• CPC Class Codes: H01L 21/0276 using an anti-reflective coating anti-reflective coating for lithography in general G03F7/09
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Abstract

A composition for manufacturing a semiconductor device includes at least one carbon-based compound that includes at least one of an alkyne group and an azide group, and a solvent. A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, coating the feature layer with a composition including alkyne and azide, forming a carbon-containing layer including a triazole compound by performing a heat treatment on the coated composition, forming a photoresist film on the carbon-containing layer, forming photoresist patterns by exposing and developing the photoresist film, and patterning the carbon-containing layer and the feature layer using the photoresist patterns.

Claims

1. A composition for manufacturing a semiconductor device, the composition comprising:

at least one carbon-based compound including at least one of an alkyne group and an azide group; and

a solvent;

wherein the at least one carbon-based compound comprises a first compound including alkyne and a second compound including azide.

2. The composition of claim 1, wherein the first compound is expressed by the following Formula (1):

R¹≡

R², 

 

Formula (1)

wherein R¹ is a C1-C50 aliphatic hydrocarbon group or a C6-C50 aromatic hydrocarbon group, and R² is a hydrogen atom, a C1-C50 aliphatic hydrocarbon group, or a C6-C50 aromatic hydrocarbon group; and

the second compound is expressed by the following Formula (2);

N₃—

R³, 

 

Formula (2)

wherein R³ is a C1-C50 aliphatic hydrocarbon group or a C6-C50 aromatic hydrocarbon group.

3. The composition of claim 1, wherein the first compound is expressed by the following Formula (1-1):

4. The composition of claim 1, wherein the second compound is expressed by the following Formula (2-1):

5. The composition of claim 1, wherein the at least one carbon-based compound further comprises a third compound having a structure that is different from a structure of at least one of the first and second compounds.

6. The composition of claim 1, wherein the first compound is expressed by the following Formula (1-3):

7. The composition of claim 1, wherein the second compound is expressed by the following Formula (2-3):

10. The composition of claim 1, wherein at least one of the first and second compounds comprises at least one heteroatom from nitrogen (N), oxygen (O), phosphorus (P), sulfur (S), boron (B), silicon (Si), a halogen atom, and a metal atom.

11. The composition of claim 5, wherein the third compound does not comprise alkyne and azide.

12. The composition of claim 5, wherein the third compound comprises pyromellitic dianhydride (PMDA).

13. The composition of claim 5, wherein the third compound comprises at least one heteroatom from nitrogen (N), oxygen (O), phosphorus (P), sulfur (S), boron (B), silicon (Si), a halogen atom, and a metal atom.

8. A composition for manufacturing a semiconductor device, the composition comprising:

at least one carbon-based compound including at least one of an alkyne group and an azide group; and

a solvent;

wherein the at least one carbon-based compound comprises a fourth compound including alkyne and azide.

9. A composition for manufacturing a semiconductor device, the composition comprising:

at least one carbon-based compound including at least one of an alkyne group and an azide group; and

a solvent;

wherein the at least one carbon-based compound comprises a fourth compound expressed by the following Formula (4);

14. The composition of claim 9, wherein “

A”

comprises a fused aliphatic ring, a fused aromatic ring, a fused heteroaliphatic ring, or a fused heteroaromatic ring.

15. The composition of claim 9, wherein “

A”

comprises at least one of substituted or unsubstituted C1-C40 alkyl, substituted or unsubstituted C1-C40 alkoxy, substituted or unsubstituted C7-C40 aryl, substituted or unsubstituted C6-C40 aryloxy, substituted or unsubstituted C2-C40 alkenyl, substituted or unsubstituted C1-C40 alkylamino, substituted or unsubstituted C6-C40 arylamino, substituted or unsubstituted C3-C20 alkylsilyl, substituted or unsubstituted C8-C40 aryl silyl, substituted or unsubstituted C7-C40 ketoaryl, substituted or unsubstituted C7-C40 ketoheteroaryl, substituted or unsubstituted C1-C40 haloalkyl, and a cyano group.

16. The composition of claim 9, wherein “

A”

comprises at least one heteroatom from nitrogen (N), oxygen (O), phosphorus (P), sulfur (S), boron (B), silicon (Si), a halogen atom, and a metal atom.

17. The composition of claim 9, wherein each of R²¹ and R²² independently comprises one of a methyl group, an ethyl group, a phenyl group, a pyridinyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, a biphenyl group, an iptycenyl group, a tartrate ester group, an acetylene group, an alkene group, and combinations thereof.

18. The composition of claim 9, wherein the fourth compound is expressed by the following Formula (4-1):

19. The composition of claim 9, wherein the fourth compound is expressed by the following Formula (4-2):

20. The composition of claim 9, wherein the fourth compound is expressed by the following Formula (4-3):