Method of transferring and bonding an array of micro devices

• US 9,773,750 B2
• Filed: 01/24/2013
• Issued: 09/26/2017
• Est. Priority Date: 02/09/2012
• Status: Active Grant

• Current Assignee: Apple Inc.
• Original Assignee: Apple Inc.
• Inventors: Bibl, Andreas, Higginson, John A., Hu, Hsin-Hua, Law, Hung-Fai Stephen
• Primary Examiner(s): Saad, Erin
• Assistant Examiner(s): GAMINO, CARLOS J
• Application Number:
  US13/749,647
• Publication Number:
  US 20130210194A1
• Time in Patent Office: 1,706 Days
• Field of Search: None
• CPC Class Codes: H01L 21/67144 Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
• CPC Class Codes: H01L 2224/29105 Gallium [Ga] as principal constituent
• CPC Class Codes: H01L 2224/29109 Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29113 Bismuth [Bi] as principal constituent
• CPC Class Codes: H01L 2224/29118 Zinc [Zn] as principal constituent
• CPC Class Codes: H01L 2224/29124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/29144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/29147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/29155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/29183 Rhenium [Re] as principal constituent
• CPC Class Codes: H01L 2224/75261 Laser
• CPC Class Codes: H01L 2224/75281 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
• CPC Class Codes: H01L 2224/75282 in the upper part of the bonding apparatus, e.g. in the bonding head
• CPC Class Codes: H01L 2224/75283 by infrared heating, e.g. infrared heating lamp
• CPC Class Codes: H01L 2224/75725 in the upper part of the bonding apparatus, e.g. in the bonding head
• CPC Class Codes: H01L 2224/7598 specially adapted for batch processes
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/83193 wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83203 Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/83805 : involving forming a eutectic alloy at the bonding interface
• CPC Class Codes: H01L 2224/83825 : Solid-liquid interdiffusion
• CPC Class Codes: H01L 2224/8383 : Solid-solid interdiffusion
• CPC Class Codes: H01L 2224/83948 : Thermal treatments, e.g. annealing, controlled cooling
• CPC Class Codes: H01L 2224/95001 : involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 24/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/95 : at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01048 : Cadmium [Cd]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01083 : Bismuth [Bi]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2933/0066 : relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

Electrostatic transfer head array assemblies and methods of transferring and bonding an array of micro devices to a receiving substrate are described. In an embodiment, a method includes picking up an array of micro devices from a carrier substrate with an electrostatic transfer head assembly supporting an array of electrostatic transfer heads, contacting a receiving substrate with the array of micro devices, transferring energy from the electrostatic transfer head assembly to bond the array of micro devices to the receiving substrate, and releasing the array of micro devices onto the receiving substrate.

Claims

1. A method comprising:

picking up an array of micro devices from a carrier substrate with an electrostatic transfer head assembly supporting an array of electrostatic transfer heads;

contacting a micro device bonding layer with a receiving substrate bonding layer on a receiving substrate for each respective micro device, wherein each receiving substrate bonding layer has a lower ambient liquidus temperature than a respective micro device bonding layer, and each receiving substrate bonding layer is characterized by a width extending in a direction parallel to a corresponding micro device bonding layer contact surface that contacts the receiving substrate bonding layer in which each micro device bonding layer contact surface is wider than each receiving substrate bonding layer;

transferring thermal energy from the electrostatic transfer head assembly, liquefying the receiving substrate bonding layers, and bonding the array of micro devices to the receiving substrate;

releasing the array of micro devices onto the receiving substrate;

wherein each micro device has a maximum width of 1-100 μ

m parallel to a contact surface of the array of electrostatic transfer heads for picking up the array of micro devices;

wherein the array of electrostatic transfer heads includes an array of mesa structures protruding from a base substrate supporting the array of electrostatic transfer heads, with each mesa structure corresponding to a separate electrostatic transfer head, and each electrostatic transfer head has a contact surface for picking up a single micro device and each electrostatic transfer head contact surface has a maximum width of 1-100 μ

m;

wherein a substrate supporting the array of electrostatic transfer heads is maintained above room temperature during the sequence of;

picking up the array of micro devices from the carrier substrate with the electrostatic transfer head assembly supporting the array of electrostatic transfer heads;

contacting the micro device bonding layer with the receiving substrate bonding layer on the receiving substrate for each respective micro device;

transferring thermal energy from the electrostatic transfer head assembly to liquefy the receiving substrate bonding layers, and bonding the array of micro devices to the receiving substrate; and

releasing the array of micro devices onto the receiving substrate; and

wherein the substrate supporting the array of electrostatic transfer heads is maintained above the ambient liquidus temperature of the receiving substrate bonding layers and below the ambient liquidus temperature of the micro device bonding layers.

2. The method of claim 1, wherein each electrostatic transfer head contact surface has a maximum width of 3-20 μ

m.