Image sensor device and method of forming same

• US 9,773,828 B2
• Filed: 09/17/2015
• Issued: 09/26/2017
• Est. Priority Date: 02/24/2009
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Wang, Wen-De, Yaung, Dun-Nian, Liu, Jen-Cheng, Chuang, Chun-Chieh, Lin, Jeng-Shyan
• Primary Examiner(s): Everhart, Caridad
• Assistant Examiner(s): SINGAL, ANKUSH K
• Application Number:
  US14/856,624
• Publication Number:
  US 20160005780A1
• Time in Patent Office: 740 Days
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00

Abstract

An image sensor device includes a first substrate, an interconnect structure, a conductive layer, a conductive via and a second substrate. The first substrate includes a first region including a pixel array and a second region including a circuit. The interconnect structure is over the pixel array or the circuit. The interconnect structure electrically connecting the circuit to the pixel array. The conductive layer is on the interconnect structure. The conductive via passes through the second substrate and at least partially embedded in the conductive layer. The second substrate is over the conductive layer.

Claims

1. An image sensor device, comprising:

a first substrate comprising;

a first region including a pixel array; and

a second region including a circuit;

an interconnect structure over the pixel array and the circuit, the interconnect structure electrically connecting the circuit to the pixel array;

a conductive layer on the interconnect structure; and

a conductive via passing through a second substrate and at least partially embedded in the conductive layer, the second substrate being over the conductive layer; and

a re-routing layer electrically connected to the conductive via at a location in the first region.

2. The image sensor device of claim 1, further comprising a first insulating layer between the second substrate and the interconnect structure.

3. The image sensor device of claim 2, wherein the conductive layer is partially embedded in the first insulating layer.

4. The image sensor device of claim 2, further comprising a second insulating layer over the first insulating layer.

5. The image sensor device of claim 1, wherein the interconnect structure includes at least two metal layers separated from each other by a dielectric material.

6. The image sensor device of claim 1, further comprising a terminal on a surface of the re-routing layer, wherein the terminal is electrically connected to the conductive via, and within the first region or the second region.

9. The image sensor device of claim 1, further comprising an insulating layer surrounding a sidewall of the conductive via.

7. An image sensor device, comprising:

a first substrate comprising;

a first region including a pixel array; and

a second region including a circuit;

an interconnect structure over the pixel array and the circuit, the interconnect structure electrically connecting the circuit to the pixel array;

a conductive layer on the interconnect structure; and

a conductive via passing through a second substrate and at least partially embedded in the conductive layer, the second substrate being over the conductive layer;

wherein the conductive layer comprises a portion in the first region, and configured as a pad.

8. The image sensor device of claim 7, wherein the pad is solid.

10. An image sensor device, comprising:

a first substrate comprising a first region and a second region;

a pixel array within the first region;

a circuit within the second region;

an interconnect structure over the first substrate, the interconnect structure electrically connecting the circuit to the pixel array;

a conductive layer on the interconnect structure;

a second substrate over the conductive layer;

a conductive via in the first region, passing through the second substrate, and partially embedded in the conductive layer; and

a re-routing layer electrically connected to the conductive via within the first region.

11. The image sensor device of claim 10, further comprising an insulation layer surrounding a sidewall of the conductive via.

12. The image sensor device of claim 10, wherein the first substrate comprises:

a light incident side, the pixel array or the circuit being on the light incident side of the first substrate; and

an opposite surface of the first substrate from the light incident side.

13. The image sensor device of claim 12, further comprising a filter element on the light incident side of the first substrate.

14. The image sensor device of claim 10, wherein the conductive via has a constant width.

15. The image sensor device of claim 10, wherein the conductive via has a tapered width.

16. The image sensor device of claim 10, wherein the re-routing layer includes a portion within the second region.

17. The image sensor device of claim 10, wherein the conductive layer comprises a solid portion in the first region, and the solid portion is configured as a pad.

18. An image sensor device, comprising:

a pixel array and a circuit disposed on a first substrate, the pixel array being in a first region of the first substrate and the circuit being in a second region of the first substrate;

an interconnect structure disposed over the first substrate, the interconnect structure electrically connecting the circuit to the pixel array;

a conductive layer over the interconnect structure;

a second substrate bonded to the conductive layer, wherein an opening is disposed in the second substrate and over the first region of the first substrate; and

a conductive material disposed in the opening to form a conductive via partially embedded in the conductive layer.

19. The device of claim 18, further comprising:

a first insulating layer on the interconnect structure;

a second insulating layer on the second substrate and in the opening of the second substrate;

wherein the conductive material forms a conductive re-routing layer on the second insulating layer; and

a terminal is disposed on the conductive re-routing layer.

20. The device of claim 18, wherein the conductive layer comprises a portion in the first region, and configured as a pad.