Thin film transistor and manufacturing method thereof, display substrate and display device
First Claim
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1. A method of manufacturing a thin film transistor, comprising:
- forming an active layer having characteristics of crystal orientation of C-axis on a substrate by using indium gallium zinc oxide (InGaO3(ZnO)m), where m≧
2,wherein the active layer is formed by depositing the indium gallium zinc oxide layer at least two times on the substrate,wherein in a procedure of manufacturing the active layer having characteristics of crystal orientation of C-axis by using the indium gallium zinc oxide, depositing a first indium gallium zinc oxide layer with C axis crystal orientation via a physical vapor deposition process under a first power and a first speed, and depositing a second indium gallium zinc oxide layer on the formed first indium gallium zinc oxide layer via a physical vapor deposition process under a second power and a second speed, wherein the first indium gallium zinc oxide layer and the second indium gallium zinc oxide layer forms the active layer, andwherein the first power is smaller than the second power, and the first speed is smaller than the second speed.
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Abstract
A thin film transistor and a manufacturing method thereof, a display substrate and a display device are provided. The method of manufacturing the thin film transistor comprises forming an active layer (4) having characteristics of crystal orientation of C-axis on a substrate (1) by using indium gallium zinc oxide (InGaO3(ZnO)m), where m≧2. The active layer fabricated with InGaO3(ZnO)m has a good electron mobility, and the quality of the fabricated active layer is improved.
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16 Claims
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1. A method of manufacturing a thin film transistor, comprising:
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forming an active layer having characteristics of crystal orientation of C-axis on a substrate by using indium gallium zinc oxide (InGaO3(ZnO)m), where m≧
2,wherein the active layer is formed by depositing the indium gallium zinc oxide layer at least two times on the substrate, wherein in a procedure of manufacturing the active layer having characteristics of crystal orientation of C-axis by using the indium gallium zinc oxide, depositing a first indium gallium zinc oxide layer with C axis crystal orientation via a physical vapor deposition process under a first power and a first speed, and depositing a second indium gallium zinc oxide layer on the formed first indium gallium zinc oxide layer via a physical vapor deposition process under a second power and a second speed, wherein the first indium gallium zinc oxide layer and the second indium gallium zinc oxide layer forms the active layer, and wherein the first power is smaller than the second power, and the first speed is smaller than the second speed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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