Epitaxial wafer and method for manufacturing same
First Claim
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1. An epitaxial wafer comprising:
- a III-V semiconductor substrate; and
a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a first layer and a second layer, wherein sulfur, selenium, and tellurium are contained as impurities,wherein a total concentration of elements contained as impurities in the multiple quantum well structure is less than or equal to 5×
1015 cm−
3, andwherein the multiple quantum well structure contains antimony as a constituent element thereof.
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Abstract
An epitaxial wafer which allows manufacture of a photodiode having suppressed dark current and ensured sensitivity, and a method for manufacturing the epitaxial wafer, are provided. The epitaxial wafer of the present invention includes: a III-V semiconductor substrate; and a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a first layer and a second layer. The total concentration of elements contained as impurities in the multiple quantum well structure is less than or equal to 5×1015 cm−3.
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11 Claims
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1. An epitaxial wafer comprising:
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a III-V semiconductor substrate; and a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a first layer and a second layer, wherein sulfur, selenium, and tellurium are contained as impurities, wherein a total concentration of elements contained as impurities in the multiple quantum well structure is less than or equal to 5×
1015 cm−
3, andwherein the multiple quantum well structure contains antimony as a constituent element thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing an epitaxial wafer on a III-V semiconductor substrate, comprising the steps of;
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growing a III-V semiconductor buffer layer on the substrate; and growing a multiple quantum well structure comprising a III-V semiconductor on the buffer layer, wherein sulfur, selenium, and tellurium are contained as impurities, and wherein the multiple quantum well structure contains antimony as a constituent element thereof, wherein in the step of growing the multiple quantum well structure, the multiple quantum well structure is grown by metal-organic vapor phase epitaxy so that a total concentration of elements contained as impurities in the multiple quantum well structure is less than or equal to 5×
1015 cm−
3. - View Dependent Claims (11)
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Specification