Semiconductor substrate, semiconductor device, and manufacturing methods thereof

• US 9,773,940 B2
• Filed: 07/19/2016
• Issued: 09/26/2017
• Est. Priority Date: 06/10/2009
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Sakai, Shiro
• Primary Examiner(s): Sandvik, Benjamin
• Application Number:
  US15/213,746
• Publication Number:
  US 20160329460A1
• Time in Patent Office: 434 Days
• Field of Search: None
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/02642 Mask materials other than SiO2 or SiN
• CPC Class Codes: H01L 21/0265 Pendeoepitaxy
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 33/0066 with a substrate not being a III-V compound
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous

Abstract

A method of manufacturing a semiconductor substrate includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a first portion of a second semiconductor layer on the first semiconductor layer and the metallic material layer, removing the metallic material layer under the first portion of the second semiconductor layer by dipping the substrate in a solution, forming a second portion of the second semiconductor layer on the first portion of the second semiconductor layer, and forming a cavity entirely through a portion of the first semiconductor layer located under where the metallic material layer was removed.

Claims

1. A method of manufacturing a semiconductor substrate, the method comprising:

forming a first semiconductor layer on a substrate;

forming a metallic material layer on the first semiconductor layer;

forming a first portion of a second semiconductor layer on the first semiconductor layer and the metallic material layer;

removing the metallic material layer under the first portion of the second semiconductor layer by dipping the substrate in a solution;

forming a second portion of the second semiconductor layer on the first portion of the second semiconductor layer; and

forming a cavity entirely through only a portion of the first semiconductor layer located under where the metallic material layer was removed.

2. The method of claim 1, further comprising forming a third semiconductor layer on the second semiconductor layer.

3. The method of claim 1, wherein the metallic material layer is removed by ultrasound cleaning a portion of the substrate on which the second semiconductor layer is formed.

4. The method of claim 2, wherein the metallic material layer is removed by ultrasound cleaning a portion of the substrate on which the second semiconductor layer is formed.

5. The method of claim 1, wherein the solution dissolves the metallic material layer and does not dissolve the first semiconductor layer or the second semiconductor layer.

6. The method of claim 1, wherein the solution is one selected from water, water and hydrochloric acid, water and sulfuric acid, water and acetic acid, water and hydrofluoric acid, water and sodium hydroxide, and water and potassium hydroxide.

7. The method of claim 1, wherein the metallic material layer is removed by ultrasound cleaning a portion of the substrate on which the second semiconductor layer is formed, using water.

8. The method of claim 2, wherein the metallic material layer is removed by ultrasound cleaning a portion of the substrate on which the second semiconductor layer is formed, using water.