Reversible top/bottom MEMS package

• US 9,776,855 B2
• Filed: 06/06/2016
• Issued: 10/03/2017
• Est. Priority Date: 03/04/2009
• Status: Active Grant

• Current Assignee: Amkor Technology Singapore Holding Pte., Ltd. (Amkor Technology Incorporated)
• Original Assignee: Amkor Technology Incorporated
• Inventors: Bolognia, David, Kuo, Bob Shih-Wei, Troche, Bud
• Primary Examiner(s): Luu, Chuong A
• Application Number:
  US15/174,911
• Publication Number:
  US 20160355395A1
• Time in Patent Office: 484 Days
• Field of Search: 257659, 257660, 257774, 257678, 257680, 257685, 257687, 257731
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81B 2207/012 the micromechanical device and the control or processing electronics being separate parts in the same package
• CPC Class Codes: B81B 2207/095 through the lid
• CPC Class Codes: B81B 7/0061 suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
• CPC Class Codes: B81B 7/0064 for protecting against electromagnetic or electrostatic interferences
• CPC Class Codes: B81B 7/007 Interconnections between the MEMS and external electrical signals
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48095 Kinked
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/165 : Containers
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A semiconductor device has a base substrate having a plurality of metal traces and a plurality of base vias. An opening is formed through the base substrate. At least one die is attached to the first surface of the substrate and positioned over the opening. A cover substrate has a plurality of metal traces. A cavity in the cover substrate forms side wall sections around the cavity. The cover substrate is attached to the base substrate so the at least one die is positioned in the interior of the cavity. Ground planes in the base substrate are coupled to ground planes in the cover substrate to form an RF shield around the at least one die.

Claims

1. A semiconductor device, comprising:

a housing comprising a top, a bottom, and one or more sides that define an enclosed cavity of the housing;

an electronic component coupled to a top inner surface of the housing, the electronic component positioned in the cavity and over an opening through the top of the housing; and

conductive material on an internal surface of the one or more sides, wherein the conductive material communicates signals between the electronic component and metal traces of the bottom of the housing.

2. The semiconductor device of claim 1, further comprising additional conductive material on an external surface of the one or more sides, wherein the additional conductive material connects a ground plane of the top of the housing to a ground plane of the bottom of the housing.

3. The semiconductor device of claim 1, further comprising another electronic component electrically coupled to metal traces of the top of the housing.

4. The semiconductor device of claim 1, further comprising:

a plurality of pads on an external surface of the bottom of the housing; and

a plurality of conductive vias that electrically couple the plurality of pads to the metal traces of the bottom of the housing.

5. The semiconductor device of claim 1, wherein the electronic component comprises a microphone.

6. The semiconductor device of claim 1, wherein the electronic component comprises a transducer.

7. The semiconductor device of claim 6, further comprising an amplifier electrically coupled to transducer via metal traces of the top of the housing.

8. A semiconductor device, comprising:

a housing comprising a top ground plane electrically coupled to a bottom ground plane to form a Faraday cage about a cavity of the housing;

an electronic component coupled to a top inner surface of the housing, the electronic component positioned in the cavity and over an opening through a top of the housing; and

conductive material on an internal surface of the housing, wherein the conductive material communicates signals between the electronic component and metal traces of a bottom of the housing.

9. The semiconductor device of claim 8, further comprising additional conductive material on an external surface of the housing, wherein the additional conductive material electrically couples the top ground plane to the bottom ground plane of the housing.

10. The semiconductor device of claim 8, further comprising another electronic component electrically coupled to metal traces of top of the housing.

11. The semiconductor device of claim 8, further comprising:

a plurality of pads on an external surface of the bottom of the housing; and

a plurality of conductive vias that electrically couple the plurality of pads to the metal traces of the bottom of the housing.

12. The semiconductor device of claim 8, wherein the electronic component comprises a microphone.

13. The semiconductor device of claim 8, wherein the electronic component comprises a transducer.

14. The semiconductor device of claim 13, further comprising an amplifier electrically coupled to transducer via metal traces of the top of the housing.

15. A semiconductor device, comprising:

a housing defining a cavity, the housing comprising a top ground plane electrically coupled to a bottom ground plane via first conductive material on an external surface of the housing;

an electronic component positioned in the cavity, on a top surface of the housing, and over an opening through a top of the housing, wherein the electronic component is electrically coupled to metal traces of the top of the housing; and

second conductive material on an internal surface of the housing, wherein the second conductive material communicates signals between metal traces of the top of the housing to metal traces of a bottom of the housing.

16. The semiconductor device of claim 15, further comprising another electronic component positioned on the top surface of the housing and electrically coupled to metal traces of top of the housing.

17. The semiconductor device of claim 15, further comprising:

a plurality of pads on an external surface of the bottom of the housing; and

a plurality of conductive vias that electrically couple the plurality of pads to the metal traces of the bottom of the housing.

18. The semiconductor device of claim 15, wherein the electronic component comprises a microphone.

19. The semiconductor device of claim 15, wherein the electronic component comprises a transducer.

20. The semiconductor device of claim 15, further comprising an amplifier positioned on the top surface of the housing and electrically coupled to transducer via the metal traces of the top of the housing.