Methods of fabricating micro electro mechanical system structures

• US 9,776,857 B2
• Filed: 09/21/2015
• Issued: 10/03/2017
• Est. Priority Date: 01/19/2012
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chien, Ting-Ying, Su, Ching-Hou, Ni, Chyi-Tsong, Chiu, Yi Hsun
• Primary Examiner(s): Schoenholtz, Joseph
• Application Number:
  US14/860,067
• Publication Number:
  US 20160009550A1
• Time in Patent Office: 743 Days
• Field of Search: None
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate
• CPC Class Codes: B81C 2203/0109 Bonding an individual cap on the substrate
• CPC Class Codes: B81C 2203/019 characterised by the material or arrangement of seals between parts
• CPC Class Codes: H01L 2224/83805 involving forming a eutectic alloy at the bonding interface
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/16235 Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

Abstract

A method of fabricating a micro electro mechanical system (MEMS) structure includes providing a first substrate structure including a bonding pad structure. The bonding pad structure has at least one recess therein. A second substrate structure is provided and bonded with the bonding pad structure of the first substrate structure.

Claims

1. A method of fabricating a device comprising:

providing a first substrate structure including a first bonding pad structure having a first bonding material that defines a first bonding surface and a second bonding surface having a recess interposing the first and second bonding surfaces;

providing a second substrate and a second bonding pad structure on the second substrate, wherein the second bonding pad structure includes a second bonding material disposed in a trench recessed from a top surface of the second substrate; and

bonding the first bonding material to the second bonding material such that the first bonding surface bonds to the second bonding material to form a first portion of the bonding interface and the second bonding surface bonds to the second bonding material to form a second portion of the bonding interface, the recess interposing the first and second portions, wherein the first and second portions of the bonding interface are disposed within the trench and wherein at least a portion of the recess extends above the trench.

2. The method of claim 1, wherein the bonding provides for a surface region of the second bonding material that does not form a physical interface with the first bonding material, the surface region being vertically collinear with the slot.

3. The method of claim 2, wherein the surface region of the second bonding material is coplanar with the first and second portions of the bonding interface.

4. The method of claim 1, wherein a width of the first portion of the bonding interface is about 30 microns or less.

5. The method of claim 1, wherein a width of the recess is about 10 microns or less.

6. The method of claim 1, wherein the first bonding material continuously extends from the first bonding surface to the second bonding surface.

7. The method of claim 1, wherein the bonding is a eutectic bonding process.

8. The method of claim 1, wherein the bonding is a semiconductor to metal eutectic bonding process.

9. The method of claim 1, wherein the bonding is by a fusion bonding process.

10. The method of claim 1, wherein the first bonding material includes at least one of Al, Cu, Ti, Ta, Au, Ni, or Sn.

11. The method of claim 1, wherein the second bonding material includes at least one of Al, Cu, Ti, Ta, Au, Ni, or Sn.

12. The method of claim 1, wherein a width of the first portion of the bonding interface is about 30 microns or less and a width of the recess is about 10 microns or less.

13. The method of claim 1, wherein the first bonding material extends along walls of the recess.

14. A method of fabricating a device comprising:

providing a first substrate structure having a first bonding material that defines a first bonding surface and a second bonding surface having at least one slot interposing the first and second bonding surfaces;

providing a second substrate structure including a second bonding material, wherein the second bonding material disposed in a trench recessed from a top surface of the second substrate; and

bonding the first bonding material to the second bonding material such that the first bonding surface bonds to the second bonding material to form a first portion of the bonding interface and the second bonding surface bonds to the second bonding material to form a second portion of the bonding interface, the at least one slot interposing the first and second portions;

where the first and second portions of the bonding interface are disposed within the trench and form bond pad rings.

15. The method of claim 14, wherein the at least one slot is two slots that extend at least partially above the trench.

16. The method of claim 14, wherein the bonding is a eutectic bonding process.

17. The method of claim 14, wherein the bonding is a semiconductor to metal eutectic bonding process.

18. The method of claim 14, wherein the bonding is by a fusion bonding process.

19. The method of claim 18, wherein the fusion bonding process includes an annealing process.

20. A method of fabricating a device comprising:

providing a first substrate having a first bonding material that defines a first bonding surface and a second bonding surface having a slot interposing the first and second bonding surfaces;

providing a second substrate including a second bonding material disposed in a trench recessed from a top surface of the second substrate, wherein the second bonding material extends from a first sidewall of the trench to a second sidewall of the trench; and

bonding the first bonding material to the second bonding material such that the first bonding surface bonds to the second bonding material to form a first portion of a bonding interface and the second bonding surface bonds to the second bonding material to form a second portion of the bonding interface, the slot interposing the first and second portions, wherein the first and second portions of the bonding interface are disposed within the trench and wherein at least a portion of the slot extends above the trench.