Amino(iodo)silane precursors for ALD/CVD silicon-containing film applications and methods of using the same

• US 9,777,373 B2
• Filed: 12/30/2015
• Issued: 10/03/2017
• Est. Priority Date: 12/30/2015
• Status: Active Grant

• Current Assignee: American Air Liquide Incorporated (L'Air Liquide SA)
• Original Assignee: American Air Liquide Incorporated (L'Air Liquide SA)
• Inventors: Kuchenbeiser, Glenn, Lefevre, Bastien
• Primary Examiner(s): Lu, Jiong-Ping
• Application Number:
  US14/984,866
• Publication Number:
  US 20160115593A1
• Time in Patent Office: 643 Days
• Field of Search: None
• CPC Class Codes: C01B 21/068 with silicon
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/31111 by chemical means

Abstract

Disclosed are amino(iodo)silane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed amino(iodo)silane precursors include SiH₂I(N(iPr)₂) or SiH₂I(N(iBu)₂).

Claims

1. A method of depositing a sacrificial Silicon nitride layer on a substrate, the method comprising:

introducing a vapor of SiH₂I(N(iPr)₂) and/or SiH₂I(N(iBu)₂) into a reactor having a substrate disposed therein and depositing at least part of SiH₂I(N(iPr)₂) and/or SiH₂I(N(iBu)₂) onto the substrate;

introducing a nitrogen-containing reactant into the reactor to form the sacrificial silicon nitride layer at a rate ranging from approximately 0.5 Å

/cycle to approximately 1 Å

/cycle using a vapor deposition method; and

removing the sacrificial silicon nitride layer at a rate of approximately 102 Å

/minute.

2. The method of claim 1, wherein the vapor deposition method is PEALD.

3. The method of claim 1, wherein the nitrogen-containing reactant is N₂.

4. A method of depositing a sacrificial Silicon nitride layer on a substrate, the method comprising:

introducing a vapor of SiH₂I(N(iPr)₂) and/or SiH₂I(N(iBu)₂) into a reactor having a substrate disposed therein;

depositing at least part of SiH₂I(N(iPr)₂) and/or SiH₂I(N(iBu)₂) onto the substrate to form the sacrificial silicon nitride layer using a vapor deposition method; and

removing the sacrificial silicon nitride layer at a rate of approximately 102Å

/minute.

5. The method of claim 4, further comprising introducing a nitrogen-containing reactant into the reactor to react with the SiH₂I(N(iPr)₂) and/or SiH₂I(N(iBu)₂) and form the sacrificial silicon nitride layer.

6. The method of claim 5, wherein the nitrogen-containing reactant is N₂.

7. The method of claim 5, wherein the vapor deposition method is PEALD.