Microsystem device and methods for fabricating the same

• US 9,778,039 B2
• Filed: 10/31/2012
• Issued: 10/03/2017
• Est. Priority Date: 10/31/2011
• Status: Active Grant

• Current Assignee: Board of Regents of the University of Michigan (University of Michigan)
• Original Assignee: Board of Regents of the University of Michigan (University of Michigan)
• Inventors: Najafi, Khalil, Peterson, Rebecca L., Cho, Jae Yoong, Cao, Zongliang, He, Guohong, Gregory, Jeffrey, Yuan, Yi
• Primary Examiner(s): Loke, Steven
• Assistant Examiner(s): Rhodes, Juanita
• Application Number:
  US13/665,163
• Publication Number:
  US 20130105921A1
• Time in Patent Office: 1,798 Days
• CPC Class Codes: G01C 19/5712 the devices involving a micromechanical structure
• CPC Class Codes: G01C 19/574 the devices having two sensing masses in anti-phase motion
• CPC Class Codes: G01C 19/5769 Manufacturing; Mounting; Housings
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/097 by vibratory elements
• CPC Class Codes: G01P 15/125 by capacitive pick-up

Abstract

A microsystem includes a base layer formed from an electrical insulating material. The base layer has an inner surface defining a cavity and an external surface opposed to the inner surface, and in direct communication with an environment. A cap layer and a microelectromechanical (MEMS) device layer are formed from electrical insulating material or an other electrical insulating material. The cap has an inner surface defining a cavity, and an external surface opposed to the inner surface, and in direct communication with the environment. A MEMS device on/in the MEMS device layer is disposed between the base and the cap. Respective adjacent portions of the base, the cap and the device substrate are bonded to define an enclosed space. The enclosed space at least partially includes the base cavity or the cap cavity. At least a portion of a MEMS device on the device layer is in the enclosed space.

Claims

1. A microsystem, comprising:

a package base layer formed from a first substrate of an electrical insulating material, the package base layer having;

a base inner surface defining a base cavity; and

a base external surface opposed to the base inner surface, and in direct communication with an environment;

a cap layer formed from a second substrate of the electrical insulating material or of an other electrical insulating material, the cap layer having;

a cap inner surface defining a cap cavity; and

a cap external surface opposed to the cap inner surface, and in direct communication with the environment; and

a plurality of microelectromechanical (MEMS) device layers, each of the MEMS device layers in the plurality of MEMS device layers having a respective device layer substrate disposed between the package base layer and the cap layer, wherein respective adjacent portions of the package base layer, the cap layer and the respective device layer substrates are bonded to define an enclosed space between the package base layer and the cap layer, the enclosed space at least partially including the base cavity or the cap cavity;

wherein a space between the cap cavity and the base cavity defines an operative portion of each of the MEMS device layers in the plurality of MEMS device layers;

wherein at least an operative portion of a respective MEMS device on or in each of the MEMS device layers in the plurality of MEMS device layers is disposed in the enclosed space;

wherein each of the MEMS device layers in the plurality of MEMS device layers is formed from a respective substrate of the electrical insulating material or of the other electrical insulating material;

wherein at least one of the MEMS device layers in the plurality of MEMS device layers is formed from the respective substrate of the electrical insulating material and an other of the MEMS device layers in the plurality of MEMS device layers is formed from the respective substrate of the other electrical insulating material; and

wherein the electrical insulating material and the other electrical insulating material are each independently chosen from fused silica, fused quartz, glass, ceramic, zero expansion glass-ceramic, mica, alumina, sapphire, and quartz.

2. The microsystem as defined in claim 1, further comprising:

an additional MEMS device layer disposed between the package base layer and the cap layer, wherein the additional MEMS device layer is formed from silicon, silicon-on-insulator, silicon dioxide, germanium, silicon carbide, silicon carbon, graphite, graphene, gallium arsenide, gallium nitride, gallium phosphide, indium phosphide, zinc oxide, zinc sulfide, zinc selenide, lead zirconium titanate, cadmium selenide, cadmium telluride, cadmium mercury telluride, lithium niobate, semiconductors, piezoelectrics, magnetics, ferroelectrics, graphite, lithium tantalite, yttrium aluminum garnet (YAG), magnesium oxide, magnesium fluoride, lithium fluoride, barium fluoride, barium titanate, strontium titanate, metals, fused silica, fused quartz, glass, ceramic, zero expansion glass-ceramic, mica, alumina, sapphire, and quartz or combinations thereof.

3. The microsystem as defined in claim 1 wherein at least a portion of each of the MEMS device layers in the plurality of the MEMS device layers is unsupported by the respective MEMS device layer substrate.

4. The microsystem as defined in claim 1 wherein at least one of the MEMS device layers in the plurality of the MEMS device layers includes two MEMS device layers, each being formed from different substrate materials.

5. The microsystem as defined in claim 1, further comprising:

a feedthrough via formed in the respective adjacent stacked portions of the package base layer, at least one of the MEMS device layers in the plurality of the MEMS device layers;

or the cap layer; and

an electrical conductor disposed in the feedthrough via to allow electrical communication through the electrical insulating material or the other electrical insulating material with the respective MEMS device on or in the at least one of the MEMS device layers in the plurality of the MEMS device layers in the enclosed space.

6. The microsystem as defined in claim 1, further comprising an operative material deposited on at least a portion of at least one of the MEMS device layers in the plurality of the MEMS device layers, the base inner surface, the cap inner surface, or combinations thereof to serve a gettering function or to operatively perform as a portion of the microsystem.

7. The microsystem as defined in claim 1 wherein at least one of the MEMS devices is chosen from mechanical isolators, thermal isolators, shock absorbers, and combinations thereof.

8. The microsystem as defined in claim 1 wherein the package base layer or the cap layer further includes at least one device chosen from sensors, actuators, mechanical isolators, thermal isolators, shock absorbers, and combinations thereof.

9. The microsystem as defined in claim 1 wherein at least the operative portion of one of the MEMS device layers in the plurality of the MEMS device layers is mechanically connected in the enclosed space between the base cavity and the cap cavity to at least an other operative portion of an adjacent MEMS device layer in the plurality of the MEMS device layers.

10. The microsystem as defined in claim 1 wherein at least the operative portion of one of the MEMS device layers in the plurality of the MEMS device layers is mechanically connected in the enclosed space between the base cavity and the cap cavity to at least an other operative portion of the package base layer or the cap layer.

11. The microsystem as defined in claim 1 wherein at least the operative portion of one of the MEMS device layers in the plurality of the MEMS device layers is mechanically isolated from at least an other operative portion of an adjacent MEMS device layer in the plurality of the MEMS device layers.

12. The microsystem as defined in claim 1 wherein an active device, capacitive element, or inductive element is attached to or integrated with the package base layer, or the cap layer.

13. The microsystem as defined in claim 12 wherein the active device is flip chip bonded to the package base layer or the cap layer.

14. The microsystem as defined in claim 12 wherein the active device communicates optically through the package base layer, the cap layer, a partition layer or at least one of the MEMS device layers in the plurality of the MEMS device layers.

15. The microsystem as defined in claim 1 wherein at least the operative portion of at least one of the plurality of the MEMS devices is formed in the respective device layer substrate of the respective MEMS device layer by micromachining.

16. The microsystem as defined in claim 1, further comprising:

a partition layer formed from a third substrate of the electrical insulating material, the partition layer having a first surface defining a first cavity and a second surface opposite the first surface defining a second cavity wherein the partition layer divides the enclosed space into at least two hydraulically separated enclosed spaces.

17. The microsystem as defined in claim 1 wherein at least one of the plurality of the MEMS devices communicates optically through the package base layer, the cap layer, a partition layer or at least one of the MEMS device layers in the plurality of the MEMS device layers.

18. The microsystem as defined in claim 1 wherein the package base layer, the cap layer, a partition layer and each of the MEMS device layers in the plurality of the MEMS device layers are electrically isolated from each other.

19. The microsystem as defined in claim 1 wherein the at least one of the MEMS device layers of the plurality of MEMS device layers includes:

a thermal-and-vibration-isolating platform;

a clock resonator disposed on the thermal-and-vibration-isolating platform;

an accelerometer disposed on the thermal-and-vibration-isolating platform;

and a gyroscope disposed on an other thermal-and-vibration-isolating platform.

20. The microsystem as defined in claim 19 wherein the gyroscope is a ring gyroscope or tuning fork gyroscope.

21. The microsystem as defined in claim 19 wherein the accelerometer is a double-ended tuning fork (DETF) resonant accelerometer a clamp-clamp beam resonant accelerometer, a vertically-hinged resonant accelerometer, or an electrostatic non-resonant accelerometer.

22. The microsystem as defined in claim 19 wherein the cap layer and the package base layer each include sensors, actuators, mechanical isolators, thermal isolators, shock absorbers, conductive layers, getters, transparent areas for optical access, or radiation shields.

23. The microsystem as defined in claim 2 wherein the additional MEMS device layer includes:

a thermal-and-vibration-isolating platform;

a clock resonator disposed on the thermal-and-vibration-isolating platform;

an accelerometer disposed on the thermal-and-vibration-isolating platform;

and a gyroscope disposed on an other thermal-and-vibration-isolating platform.

24. The microsystem as defined in claim 23 wherein the gyroscope is a ring gyroscope or a tuning fork gyroscope.

25. The microsystem as defined in claim 23 wherein the accelerometer is a double-ended tuning fork (DETF) resonant accelerometer, a clamp-clamp beam resonant accelerometer, a vertically-hinged resonant accelerometer, or an electrostatic non-resonant accelerometer.

26. The microsystem as defined in claim 23 wherein the cap layer and the package base layer each include a sensor, an actuator, a mechanical isolator, a thermal isolator, a shock absorber, a conductive layer, a getter, a transparent area for optical access, or a radiation shield disposed thereon.

28. The microsystem as defined in claim 1 wherein an active device, capacitive element, or inductive element is attached to or integrated with at least one of the MEMS device layers in the plurality of the MEMS device layers.

29. The microsystem as defined in claim 28 wherein the active device is flip chip bonded to the at least one of the MEMS device layers in the plurality of the MEMS device layers.

27. A microsystem, comprising:

a package base layer formed from a first substrate of an electrical insulating material, the package base layer having;

a base inner surface defining a base cavity; and

a base external surface opposed to the base inner surface, and in direct communication with an environment;

a cap layer formed from a second substrate of the electrical insulating material or of an other electrical insulating material, the cap layer having;

a cap inner surface defining a cap cavity; and

a cap external surface opposed to the cap inner surface, and in direct communication with the environment; and

a microelectromechanical (MEMS) device layer having a device layer substrate disposed between the package base layer and the cap layer, wherein respective adjacent portions of the package base layer, the cap layer and the device layer substrate are bonded to define an enclosed space between the package base layer and the cap layer, the enclosed space at least partially including the base cavity or the cap cavity;

wherein at least an operative portion of a MEMS device on or in the MEMS device layer is disposed in the enclosed space;

wherein the MEMS device layer is formed from a substrate of the electrical insulating material or of the other electrical insulating material;

wherein the electrical insulating material and the other electrical insulating material are each independently chosen from fused silica, fused quartz, glass, ceramic, zero expansion glass-ceramic, mica, alumina, sapphire, and quartz; and

wherein the package base layer or the cap layer further includes at least one device chosen from sensors, actuators, mechanical isolators, thermal isolators, shock absorbers, and combinations thereof.

30. A microsystem, comprising:

a package base layer formed from a first substrate of an electrical insulating material, the package base layer having;

a base inner surface defining a base cavity; and

a base external surface opposed to the base inner surface, and in direct communication with an environment;

a cap layer formed from a second substrate of the electrical insulating material or of an other electrical insulating material, the cap layer having;

a cap inner surface defining a cap cavity; and

a cap external surface opposed to the cap inner surface, and in direct communication with the environment; and

a microelectromechanical (MEMS) device layer having a device layer substrate disposed between the package base layer and the cap layer, wherein respective adjacent portions of the package base layer, the cap layer and the device layer substrate are bonded to define an enclosed space between the package base layer and the cap layer, the enclosed space at least partially including the base cavity or the cap cavity;

wherein at least an operative portion of a MEMS device on or in the MEMS device layer is disposed in the enclosed space;

wherein the MEMS device layer is formed from a substrate of the electrical insulating material or of the other electrical insulating material;

wherein the package base layer, the cap layer, a partition layer and the MEMS device layer are electrically isolated from each other;

wherein the partition layer is formed from a third substrate of the electrical insulating material;

wherein the partition layer has a first surface defining a first cavity and a second surface opposite the first surface defining a second cavity;

wherein the partition layer divides the enclosed space into at least two hydraulically separated enclosed spaces; and

wherein the electrical insulating material and the other electrical insulating material are each independently chosen from fused silica, fused quartz, glass, ceramic, zero expansion glass-ceramic, mica, alumina, sapphire, and quartz.

31. A microsystem, comprising:

a package base layer formed from a first substrate of an electrical insulating material, the package base layer having;

a base inner surface defining a base cavity; and

a base external surface opposed to the base inner surface, and in direct communication with an environment;

a cap layer formed from a second substrate of the electrical insulating material or of an other electrical insulating material, the cap layer having;

a cap inner surface defining a cap cavity; and

a cap external surface opposed to the cap inner surface, and in direct communication with the environment; and

a microelectromechanical (MEMS) device layer having a device layer substrate disposed between the package base layer and the cap layer, wherein respective adjacent portions of the package base layer, the cap layer and the device layer substrate are bonded to define an enclosed space between the package base layer and the cap layer, the enclosed space at least partially including the base cavity or the cap cavity;

wherein a space between the cap cavity and the base cavity defines an operative portion of the MEMS device layer;

wherein at least an operative portion of a MEMS device on or in the MEMS device layer is disposed in the enclosed space;

wherein the MEMS device layer is formed from a substrate of the electrical insulating material or of the other electrical insulating material;

wherein at least the operative portion of the MEMS device layer is mechanically connected in the enclosed space between the base cavity and the cap cavity to at least an other operative portion of the package base layer or the cap layer; and

wherein the electrical insulating material and the other electrical insulating material are each independently chosen from fused silica, fused quartz, glass, ceramic, zero expansion glass-ceramic, mica, alumina, sapphire, and quartz.