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Methods for performing model-based lithography guided layout design

  • US 9,779,186 B2
  • Filed: 05/20/2014
  • Issued: 10/03/2017
  • Est. Priority Date: 08/28/2007
  • Status: Active Grant
First Claim
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1. A method of determining a location of one or more features within a mask layout of a device manufacturing process involving

  • lithography, the method comprising;

    performing, by a hardware computer, a simulation involving the mask layout based on a placement of a first feature in the mask layout, wherein performing the simulation includes generating a SRAF guidance map that is a two-dimensional set of values respectively corresponding to points in the mask layout; and

    determining a location for placing a second feature in the mask layout based on the two-dimensional set of values respectively corresponding to points in the mask layout, wherein the determined location comprises one or more of the points.

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