Methods for performing model-based lithography guided layout design

• US 9,779,186 B2
• Filed: 05/20/2014
• Issued: 10/03/2017
• Est. Priority Date: 08/28/2007
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Ye, Jun, Cao, Yu, Feng, Hanying
• Primary Examiner(s): Tat, Binh
• Application Number:
  US14/282,754
• Publication Number:
  US 20140317580A1
• Time in Patent Office: 1,232 Days
• Field of Search: 716 50- 56
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G06F 30/20 Design optimisation, verification or simulation optimisation, verification or simulation of circuit designs G06F30/30

Abstract

Methods are disclosed to create efficient model-based Sub-Resolution Assist Features (MB-SRAF). An SRAF guidance map is created, where each design target edge location votes for a given field point on whether a single-pixel SRAF placed on this field point would improve or degrade the aerial image over the process window. In one embodiment, the SRAF guidance map is used to determine SRAF placement rules and/or to fine-tune already-placed SRAFs. The SRAF guidance map can be used directly to place SRAFs in a mask layout. Mask layout data including SRAFs may be generated, wherein the SRAFs are placed according to the SRAF guidance map. The SRAF guidance map can comprise an image in which each pixel value indicates whether the pixel would contribute positively to edge behavior of features in the mask layout if the pixel is included as part of a sub-resolution assist feature.

Claims

1. A method of determining a location of one or more features within a mask layout of a device manufacturing process involving_—

lithography, the method comprising;

performing, by a hardware computer, a simulation involving the mask layout based on a placement of a first feature in the mask layout, wherein performing the simulation includes generating a SRAF guidance map that is a two-dimensional set of values respectively corresponding to points in the mask layout; and

determining a location for placing a second feature in the mask layout based on the two-dimensional set of values respectively corresponding to points in the mask layout, wherein the determined location comprises one or more of the points.

2. The method according to claim 1, further comprising:

placing the second feature at the determined location; and

iteratively repeating the steps of performing a simulation involving the mask layout based on previously placed features, determining the location for placing another feature within the mask layout and placing the another feature until a desired number of features has been placed in the mask layout.

3. The method according to claim 2, further comprising optimizing the mask layout using an optical proximity correction.

4. The method according to claim 2, further comprising optimizing the mask layout using a resolution enhancement technique.

5. The method according to claim 2, further comprising generating a plurality of layout guidance maps, wherein each layout guidance map (LGM) is representative of simulated imaging performance of a mask layout.

6. The method according to claim 5, wherein each LGM comprises a two-dimensional image including a plurality of pixel values, and wherein the placement of a feature is calculated based on one or more of the pixel values.

7. The method according to claim 6, wherein each of the pixel values is indicative of the effect on printability of one or more patterns in the mask layout of a portion of the feature placed on the pixel.

8. The method according to claim 7, wherein the effect on printability is a negative effect.

9. A method of placing a plurality of features of a design layout into a mask layout of a device manufacturing process involving lithography, the method comprising:

placing a first one of the plurality of features from the design layout in the mask layout;

generating, using a computer simulation performed by a hardware computer, a two-dimensional set of values respectively corresponding to points in the mask layout based on the placement of the first feature; and

determining a location for placing a second different one of the plurality of features from the design layout in the mask layout based on the two-dimensional set of values respectively corresponding to points in the mask layout, wherein the determined location comprises one or more of the points.

10. The method according to claim 9, further comprising:

placing the second different one of the plurality of features from the design layout at the determined location in the mask layout; and

iteratively repeating the steps of generating the two-dimensional set of values based on previously placed ones of the plurality of features from the design layout in the mask layout, determining the location for placing another different one of the plurality of features from the design layout within the mask layout and placing the another different feature until all of the plurality of features from the design layout have been placed in the mask layout.

11. The method according to claim 9, wherein the generating includes generating a layout guidance map (LGM), wherein the LGM comprises a two-dimensional image including a plurality of pixel values, and wherein the placement of the second different feature is determined based on one or more of the pixel values.

12. The method according to claim 11, wherein each of the pixel values is indicative of the effect on printability of one or more patterns in the mask layout of a portion of a feature placed on the pixel.

13. The method according to claim 12, wherein the effect on printability is a negative effect.

14. The method according to claim 9, wherein the generating includes generating a sub-resolution assist feature (SRAF) guidance map (SGM) for placing SRAFs different from the plurality of features from the design layout into the mask layout.

15. The method according to claim 14, wherein the SGM comprises an image having a plurality of pixels corresponding to the mask layout, and wherein the generating step includes computing, for each pixel in the image, whether a SRAF located in the mask layout corresponding to the pixel would contribute positively to edge behavior of at least one feature in the mask layout.

16. The method according to claim 10, wherein the generating includes generating a sub-resolution assist feature (SRAF) guidance map (SGM) for placing SRAFs different from the plurality of features from the design layout into the mask layout.

17. The method according to claim 16, wherein the SGM comprises an image having a plurality of pixels corresponding to the mask layout, and wherein the generating step includes computing, for each pixel in the image, whether a SRAF located in the mask layout corresponding to the pixel would contribute positively to edge behavior of at least one feature in the mask layout.

18. A non-transitory computer-readable medium having instructions configured to, when executed on a computing device:

perform simulation involving a mask layout of a device manufacturing process involving lithography, based on a placement of a first feature in the mask layout, wherein performance of the simulation includes generation of a SRAF guidance map that is a two-dimensional set of values respectively corresponding to points in the mask layout; and

determine a location for placing a second feature in the mask layout based on the two-dimensional set of values respectively corresponding to points in the mask layout, wherein the determined location comprises one or more of the points.

19. A non-transitory computer-readable medium having instructions configured to, when executed on a computing device:

generate, using a computer simulation, a two-dimensional set of values respectively corresponding to points in a mask layout of a device manufacturing process involving lithography, based on a placement of a first one of the plurality of features from a design layout in the mask layout; and

determine a location for placing a second different one of the plurality of features from the design layout in the mask layout based on the two-dimensional set of values respectively corresponding to points in the mask layout, wherein the determined location comprises one or more of the points.

20. The non-transitory computer-readable medium according to claim 19, wherein the instructions to generate the two-dimensional set of values are further configured generate a sub-resolution assist feature (SRAF) guidance map (SGM) for placing SRAFs different from the plurality of features from the design layout into the mask layout.