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Phase change memory device

  • US 9,779,805 B2
  • Filed: 06/22/2015
  • Issued: 10/03/2017
  • Est. Priority Date: 07/27/2006
  • Status: Active Grant
First Claim
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1. A method of reading a memory device, the method comprising:

  • sequentially coupling each of a plurality of reference cells to at least one of a plurality of comparators, each of a plurality of memory cell data bit lines being coupled to only one of the plurality of comparators, each of the plurality of reference cells being coupled to one of a plurality of reference cell bit lines and further being in a common row line with only a respective one of a plurality of memory cells to which it is being compared, each of the reference cells being programmed to a pre-defined threshold voltage corresponding to a respective reference value; and

    comparing an electrical behavior of each of the plurality of memory cells and of the sequentially coupled ones of the plurality of reference cells to determine a value of respective ones of the plurality of memory cells being read.

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