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Memory cell pillar including source junction plug

  • US 9,780,102 B2
  • Filed: 11/07/2014
  • Issued: 10/03/2017
  • Est. Priority Date: 11/07/2014
  • Status: Active Grant
First Claim
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1. An apparatus comprising:

  • a source material;

    a dielectric material over the source material, the dielectric material including an opening, the opening including a recess, the recess including a first recess sidewall and a second recess sidewall opposite from the first recess sidewall;

    a select gate material over the dielectric material, the select gate material including an opening having a first side wall and a second sidewall opposite from the first sidewall;

    a memory cell stack over the select gate material;

    a conductive plug located in the opening including the recess of the dielectric material and contacting a portion of the source material, the conductive plug including an epitaxial material;

    a channel material extending through the memory cell stack and through the select gate material between the first and second sidewalls of the select gate material and contacting the conductive plug, wherein a distance between the first and second recess sidewalk is greater than a distance between the first and second sidewalls of the opening of the select gate material; and

    a metal combined with a semiconductor material, wherein the source material is between the dielectric material and the metal combined with the semiconductor material.

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