Nitride semiconductor epitaxial wafer and field effect nitride transistor

• US 9,780,175 B2
• Filed: 12/20/2012
• Issued: 10/03/2017
• Est. Priority Date: 01/25/2012
• Status: Active Grant

• Current Assignee: Sumitomo Chemical Company Limited
• Original Assignee: Sumitomo Chemical Company Limited
• Inventors: Tanaka, Takeshi, Kaneda, Naoki, Narita, Yoshinobu
• Primary Examiner(s): Armand, Marc
• Assistant Examiner(s): BRASFIELD, QUINTON A
• Application Number:
  US13/722,457
• Publication Number:
  US 20130187172A1
• Time in Patent Office: 1,748 Days
• Field of Search: 257192-194, 257E33049, 257 77
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02494 Structure
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0259 Microstructure
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/7786 with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT

Abstract

A nitride semiconductor epitaxial wafer includes a substrate, a GaN layer provided over the substrate, and an AlGaN layer provided over the GaN layer. The GaN layer has a wurtzite crystal structure, and a ratio c/a of a lattice constant c in a c-axis orientation of the GaN layer to a lattice constant a in an a-axis orientation of the GaN layer is not more than 1.6266.

Claims

1. A field effect nitride transistor, comprising:

a substrate;

a GaN layer configured to be an electron transit layer provided over the substrate;

an AlGaN layer configured to be an electron feed layer provided over the GaN layer;

a source electrode and a drain electrode provided directly on the AlGaN layer, and

a gate electrode provided directly on the AlGaN layer between the source electrode and the drain electrode,

wherein the GaN layer comprises a wurtzite crystal structure, and a measured ratio c/a of the lattice constant c in a c-axis orientation of the GaN layer to a lattice constant a in the a-axis orientation of the GaN layer is not more than 1.6266 despite the application of lattice mismatch stresses at interfaces between the GaN layer and the substrate and the AlGaN layer, and

wherein the measured ratio c/a allows the occurrence of only negative charges on the surface of the GaN layer on which a two-dimensional electron gas is induced spatially due to the lattice mismatch stresses to suppress current collapse.

2. The field effect nitride transistor according to claim 1, wherein the GaN layer directly contacts an AlN layer on one side and the AlGaN layer on the other side.

4. The field effect nitride transistor according to claim 2, wherein the AlN layer has a surface shaped to have a positive skewness Rsk to prevent current collapse.

5. The field effect nitride transistor according to claim 2, wherein the positive skewness Rsk of the AlN layer is positive.

6. The field effect nitride transistor according to claim 2, wherein the positive skewness Rsk of the AlN layer is not less than 0.5.

3. A field effect nitride transistor, comprising:

a substrate;

a single GaN layer configured to be an electron transit layer provided over the substrate;

an AlGaN layer configured to be an electron feed layer provided directly on the GaN layer;

a source electrode and a drain electrode provided directly on the AlGaN layer, and

a gate electrode provided directly on the AlGaN layer between the source electrode and the drain electrode,

wherein the GaN layer comprises a wurtzite crystal structure, and a measured ratio c/a of the lattice constant c in a c-axis orientation of the GaN layer to a lattice constant a in the a-axis orientation of the GaN layer is not more than 1.6266 despite the application of lattice mismatch stresses at interfaces between the GaN layer and the substrate and the AlGaN layer, and,

wherein the field effect nitride transistor includes only one GaN layer, and

wherein the measured ratio c/a of 1.6266 allows the occurrence of only negative charges on the surface of the GaN layer on which a two-dimensional electron gas is induced spatially to suppress current collapse.