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Method of forming a semiconductor device including forming a shield conductor overlying a gate conductor

  • US 9,780,196 B2
  • Filed: 09/09/2016
  • Issued: 10/03/2017
  • Est. Priority Date: 03/15/2013
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device comprising:

  • providing a multi-layer semiconductor material having a first layer of a first conductivity type, having a first region of a second conductivity type overlying the first layer, having a plurality of openings that extend from a surface of the first region into the first layer wherein the plurality of openings have sidewalls, a gate insulator formed on the sidewalls of a first opening of the plurality of openings, and a gate conductor material within the first opening;

    removing a first portion of the gate conductor material from the first opening and leaving a second portion of the gate conductor material within the first opening as a gate conductor wherein a portion of the first layer that underlies the gate conductor forms a channel region of the semiconductor device;

    forming a shield insulator within the first opening and overlying the gate conductor;

    forming a shield conductor within the first opening overlying the gate conductor; and

    forming a source conductor on a portion of the shield conductor to form an electrical connection between the shield conductor and the first layer.

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