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Method and structure of forming self-aligned RMG gate for VFET

  • US 9,780,208 B1
  • Filed: 07/18/2016
  • Issued: 10/03/2017
  • Est. Priority Date: 07/18/2016
  • Status: Active Grant
First Claim
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1. A method comprising:

  • providing a fin structure comprising a fin with sacrificial material above and adjacent the fin, the fin structure being above a substrate adjacent a source or drain;

    removing a first portion of the sacrificial material above the fin to form an opening within the sacrificial material on top of the fin;

    forming a top source or drain within the opening on top of the fin;

    removing a second portion of the sacrificial material adjacent the top source or drain;

    depositing a spacer above and adjacent the top source or drain;

    removing the remaining sacrificial material;

    depositing a gate material above the spacer and below the spacer to the sides of the fin; and

    removing the gate material above the bottom portion of the spacer to form a self aligned gate around the fin and a vertical field effect transistor.

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