Semiconductor device and manufacturing method thereof
First Claim
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1. A semiconductor device comprising:
- an oxide semiconductor layer including a channel formation region, a source region and a drain region,wherein;
the oxide semiconductor layer contains zinc, indium and gallium;
the channel formation region includes a crystal;
the crystal is c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer;
the crystal comprises atoms arranged to have a triangular or hexagonal shape in an a-b plane;
each of the source region and the drain region includes at least one element selected from Group 15 elements;
each of the source region and the drain region comprises a wurtzite crystal structure, anda crystal structure of each of the source region and the drain region is different from a crystal structure of the channel formation region.
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Abstract
A semiconductor device capable of high speed operation is provided. Further, a semiconductor device in which change in electric characteristics due to a short channel effect is hardly caused is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed by self-aligned process in which one or more elements selected from Group 15 elements are added to the semiconductor layer with the use of a gate electrode as a mask. The source region and the drain region can have a wurtzite crystal structure.
384 Citations
24 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor layer including a channel formation region, a source region and a drain region, wherein; the oxide semiconductor layer contains zinc, indium and gallium; the channel formation region includes a crystal; the crystal is c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer; the crystal comprises atoms arranged to have a triangular or hexagonal shape in an a-b plane; each of the source region and the drain region includes at least one element selected from Group 15 elements; each of the source region and the drain region comprises a wurtzite crystal structure, and a crystal structure of each of the source region and the drain region is different from a crystal structure of the channel formation region. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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an oxide semiconductor layer including a channel formation region, a source region and a drain region; a source electrode electrically connected to the source region; and a drain electrode electrically connected to the drain region, wherein; the channel formation region includes a crystal; the crystal is c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer; the crystal comprises atoms arranged to have a triangular or hexagonal shape in an a-b plane; each of the source electrode and the drain electrode is a metal electrode; an energy gap of the channel formation region is larger than an energy gap of each of the source region and the drain region; the energy gap of the channel formation region is 2.5 eV or more, and a crystal structure of each of the source region and the drain region is different from a crystal structure of the channel formation region. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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an oxide semiconductor layer including a channel formation region, a source region and a drain region, wherein; the oxide semiconductor layer contains zinc, indium and gallium; the channel formation region includes a crystal; the crystal is c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer; the crystal comprises atoms arranged to have a triangular or hexagonal shape in an a-b plane; each of the source region and the drain region includes at least one element selected from Group 15 elements; each of the source region and the drain region comprises a wurtzite crystal structure; an energy gap of the channel formation region is larger than an energy gap of each of the source region and the drain region; the energy gap of the channel formation region is 2.5 eV or more, and a crystal structure of each of the source region and the drain region is different from a crystal structure of the channel formation region. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A semiconductor device comprising:
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an oxide semiconductor layer including a channel formation region, a source region and a drain region, wherein; the oxide semiconductor layer contains zinc, indium and gallium; the channel formation region includes a crystal; each of the source region and the drain region includes at least one element selected from Group 15 elements; each of the source region and the drain region comprises a wurtzite crystal structure, and a crystal structure of each of the source region and the drain region is different from a crystal structure of the channel formation region. - View Dependent Claims (21, 22, 23, 24)
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Specification