Semiconductor structure and manufacturing method thereof

• US 9,780,251 B2
• Filed: 03/06/2017
• Issued: 10/03/2017
• Est. Priority Date: 11/07/2013
• Status: Active Grant

• Current Assignee: Xintec Incorporated
• Original Assignee: Xintec Incorporated
• Inventors: Suen, Wei-Luen, Chien, Wei-Ming, Lee, Po-Han, Liu, Tsang-Yu, Ho, Yen-Shih
• Primary Examiner(s): Bradford, Peter
• Application Number:
  US15/451,202
• Publication Number:
  US 20170179330A1
• Time in Patent Office: 211 Days
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 31/02002 Arrangements for conducting electric current to or from the device in operations
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/02363 of the semiconductor body itself, e.g. textured active layers
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table

Abstract

A semiconductor structure includes a silicon substrate, a protection layer, an electrical pad, an isolation layer, a redistribution layer, a conductive layer, a passivation layer, and a conductive structure. The silicon substrate has a concave region, a step structure, a tooth structure, a first surface, and a second surface opposite to the first surface. The step structure and the tooth structure surround the concave region. The step structure has a first oblique surface, a third surface, and a second oblique surface facing the concave region and connected in sequence. The protection layer is located on the first surface of the silicon substrate. The electrical pad is located in the protection layer and exposed through the concave region. The isolation layer is located on the first and second oblique surfaces, the second and third surfaces of the step structure, and the tooth structure.

Claims

1. A manufacturing method of a semiconductor structure, the manufacturing method comprising:

providing a wafer structure having a silicon substrate, an electrical pad, and a protection layer, wherein the silicon substrate has a first surface and a second surface opposite to the first surface, the protection layer is located on the first surface, and the electrical pad is located in the protection layer;

etching the silicon substrate to form a cutting trench and a through hole that is aligned with the electrical pad, wherein the silicon substrate has a first portion and a second portion surrounding the through hole, and the second portion is between the cutting trench and the through hole;

forming a photoresist layer on the second surface of the first portion of the silicon substrate;

etching the first and second portions of the silicon substrate, such that the first portion forms a step structure, the second portion forms a tooth structure, and the through hole forms a concave region surrounded by the step structure and the tooth structure, wherein the step structure has a first oblique surface, a third surface, and a second oblique surface facing the concave region and connected in sequence; and

removing the photoresist layer.

2. The manufacturing method of claim 1, further comprising:

forming an isolation layer on the tooth structure, the step structure, and the protection layer; and

patterning the isolation layer, such that the electrical pad is exposed through the concave region.

3. The manufacturing method of claim 2, further comprising:

forming a redistribution layer on the isolation layer and the electrical pad.

4. The manufacturing method of claim 3, further comprising:

forming a conductive layer on the redistribution layer.

5. The manufacturing method of claim 4, further comprising:

forming a passivation layer to cover the step structure and the tooth structure; and

patterning the passivation layer, such that the passivation layer on the second surface has an opening, wherein the conductive layer is exposed through the opening.

6. The manufacturing method of claim 5, further comprising:

disposing a conductive structure on the conductive layer in the opening of the passivation layer.

7. The manufacturing method of claim 2, wherein the isolation layer is formed on the tooth structure, the step structure, and the protection layer by utilizing a chemical vapor deposition process.

8. The manufacturing method of claim 4, wherein the conductive layer is formed on the redistribution layer by utilizing a chemical plating process.

9. The manufacturing method of claim 1, wherein the wafer structure has a light transmissive element and a supporting layer that is between the light transmissive element and the protection layer, and the manufacturing method further comprises:

cutting the passivation layer, the protection layer, the supporting layer, and the light transmissive element along the cutting trench.