Optoelectronic semiconductor component

• US 9,780,263 B2
• Filed: 06/02/2014
• Issued: 10/03/2017
• Est. Priority Date: 06/05/2013
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Tngring, Ivar, Pll, Andreas
• Primary Examiner(s): Parker, Allen
• Assistant Examiner(s): LE, LONG HUYNH
• Application Number:
  US14/893,121
• Publication Number:
  US 20160099390A1
• Time in Patent Office: 1,219 Days
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An optoelectronic semiconductor component includes a luminescent diode chip including a radiation passage face through which primary electromagnetic radiation leaves the luminescent diode chip when in operation, and a filter element that covers the radiation passage face of the luminescent diode chip at least in places, wherein the filter element prevents passage of some of the primary electromagnetic radiation in the UV range, and the filter element consists of a II-VI compound semiconductor material.

Claims

1. An optoelectronic semiconductor component comprising:

a luminescent diode chip comprising a radiation passage face through which primary electromagnetic radiation leaves the luminescent diode chip when in operation; and

a filter element that covers the radiation passage face of the luminescent diode chip at least in places, wherein

the filter element prevents passage of some of the primary electromagnetic radiation in the UV range, and

the filter element consists of a nominally undoped ternary or quaternary II-VI compound semiconductor material.

2. The optoelectronic semiconductor component according to claim 1, wherein

the primary electromagnetic radiation emitted by the luminescent diode chip when in operation has a peak wavelength,

the peak wavelength of the primary electromagnetic radiation emitted by the luminescent diode chip when in operation lies in a wavelength range of blue light, and

the II-VI compound semiconductor material of the filter element is nominally undoped.

3. The optoelectronic semiconductor component according to claim 1, wherein

the filter element consists of one or two or more of:

ZnMgSe, ZnSeS and MgZnTe.

4. The optoelectronic semiconductor component according to claim 1, wherein

the primary electromagnetic radiation emitted by the luminescent diode chip when in operation has a peak wavelength,

the peak wavelength of the primary electromagnetic radiation emitted by the luminescent diode chip when in operation lies in a wavelength range of blue light,

the II-VI compound semiconductor material of the filter element is nominally undoped, and

the filter element consists of one or two or more of:

ZnMgSe, ZnSeS and MgZnTe.

5. The optoelectronic semiconductor component according to claim 1, wherein the II-VI compound semiconductor material of the filter element is nominally undoped.

6. The optoelectronic semiconductor component according to claim 1, wherein the filter element has a substantially uniform refractive index.

7. The optoelectronic semiconductor component according to claim 1, wherein the filter element is configured as a layer of uniform thickness, and the thickness is at least 0.5 μ

m and at most 3.5 μ

m.

8. The optoelectronic semiconductor component according to claim 1, wherein the filter element completely covers the radiation passage face.

9. The optoelectronic semiconductor component according to claim 1, wherein the filter element completely covers the free outer face of the luminescent diode chip.

10. The optoelectronic semiconductor component according to claim 1, wherein the filter element is electrically insulating.

11. The optoelectronic semiconductor component according to claim 1, further comprising a conversion element arranged on a side of the filter element remote from the luminescent diode chip, wherein the conversion element converts at least some of the primary electromagnetic radiation into secondary electromagnetic radiation of a different wavelength.

12. The optoelectronic semiconductor component according to claim 11, wherein the filter element directly contacts the luminescent diode chip and/or the conversion element.

13. The optoelectronic semiconductor component according to claim 11, wherein the conversion element is configured as a layer of uniform thickness.

14. The optoelectronic semiconductor component according to claim 11, wherein the conversion element completely covers a free outer face of the filter element.

15. The optoelectronic semiconductor component according to claim 1, further comprising a connection carrier on which the luminescent diode chip is arranged on a mounting surface, wherein regions of the mounting surface not covered by the luminescent diode chip are covered by the filter element.

16. The optoelectronic semiconductor component according to claim 1, wherein the filter element is deposited by sputtering.

17. An optoelectronic semiconductor component comprising:

a luminescent diode chip comprising a radiation passage face through which primary electromagnetic radiation leaves the luminescent diode chip when in operation; and

a filter element that covers the radiation passage face of the luminescent diode chip at least in places, wherein

the filter element prevents passage of some of the primary electromagnetic radiation in the UV range, and

the filter element consists of ZnMgSe.

18. An optoelectronic semiconductor component comprising:

a luminescent diode chip comprising a radiation passage face through which primary electromagnetic radiation leaves the luminescent diode chip when in operation; and

a filter element that covers the radiation passage face of the luminescent diode chip at least in places, wherein

the filter element prevents passage of some of the primary electromagnetic radiation in the UV range, and

the filter element consists of MgZnTe.