Method for manufacturing light emitting device

• US 9,780,275 B2
• Filed: 11/28/2016
• Issued: 10/03/2017
• Est. Priority Date: 05/20/2014
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Suzuki, Ryo, Takeuchi, Yoshikazu, Sasa, Hirokazu
• Primary Examiner(s): Rodriguez, Armando
• Application Number:
  US15/361,630
• Publication Number:
  US 20170077373A1
• Time in Patent Office: 309 Days
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/641 characterized by the materials

Abstract

A method for manufacturing a light emitting device includes preparing a light emitting element that includes a light transmissive substrate comprising a first main surface, a second main surface, and a side surface having a light transmitting part and a light absorbing part whose optical transmissivity is lower than that of the light transmitting part, and a semiconductor laminate that is provided to the first main surface of the light transmissive substrate, joining the light emitting element to an upper surface of a base body such that the base body is opposite to the side where the semiconductor laminate is provided, providing a support member that covers the side surface of the light emitting element and part of the base body, and removing the light absorbing part by thinning the light transmissive substrate from the second main surface side.

Claims

1. A method for manufacturing a light emitting device comprising:

preparing a light emitting element that includes a light transmissive substrate comprising a first main surface, a second main surface, and a side surface having a light transmitting part and a light absorbing part whose optical transmissivity is lower than that of the light transmitting part, and a semiconductor laminate that is provided to the first main surface of the light transmissive substrate;

joining the light emitting element to an upper surface of a base body such that the base body is opposite to the side where the semiconductor laminate is provided;

providing a support member that covers the side surface of the light emitting element and part of the base body; and

removing the light absorbing part by thinning the light transmissive substrate from the second main surface side.

2. The manufacturing method according to claim 1, wherein the support member covers from the side surface of the light emitting element to the second main surface of the light transmissive substrate.

3. The manufacturing method according to claim 1, wherein the support member fills a gap between the light emitting element and the upper surface of the base body.

4. The manufacturing method according to claim 1, wherein the light emitting element is manufactured by a method comprising the steps of:

laminating a plurality of semiconductor layers on a wafer to be used as the light transmissive substrate of a light emitting element;

forming the light absorbing part along a dividing line of the wafer by irradiating the light transmissive substrate with a laser; and

dividing the laminated plurality of semiconductor layers on the wafer and the wafer into a plurality of light emitting elements along the light absorbing part.

5. The manufacturing method according to claim 1, wherein the light absorbing part is provided at a location that is away from the second main surface of the light transmissive substrate.

6. The method for manufacturing a light emitting device according to claim 1, wherein the support member is made of a resin including a light reflection material.

7. The method for manufacturing a light emitting device according to claim 1, further comprising

forming a wavelength conversion member containing a phosphor on an upper surface of the light emitting element after the removal of the light absorbing part.

8. The method for manufacturing a light emitting device according to claim 1, wherein the light transmissive substrate is removed so that the thickness of the light transmissive substrate is about 1 to 50 μ

m.

9. The method for manufacturing a light emitting device according to claim 7, wherein the wavelength conversion member is formed with the thickness of 5 to 100 μ

m.

10. The method for manufacturing a light emitting device according to claim 1, wherein the support member covers the light emitting element so as to be in contact with side surfaces of the light emitting element.

11. The method for manufacturing a light emitting device according to claim 7, wherein an upper surface of the wavelength conversion member above the support member is formed lower than the upper surface of the wavelength conversion member above the light emitting element.

12. The method for manufacturing a light emitting device according to claim 1, further comprising

preparing a plurality of the light emitting elements;

preparing a composite base body which comprises connection terminals;

joining the plurality of light emitting elements to the connection terminals of the composite base body;

integrally covering the plurality of light emitting elements with the support member;

removing part of the support member and part of the light transmissive substrates of the plurality of light emitting elements; and

dividing the support member and the composite base body to manufacture a plurality of light emitting devices.

13. The manufacturing method according to claim 12, wherein the light absorbing part is provided at a location that is away from the second main surface of the light transmissive substrate.

14. The method for manufacturing a light emitting device according to claim 12, wherein the support member is made of a resin including a light reflection material.

15. The method for manufacturing a light emitting device according to claim 12, further comprising

forming a wavelength conversion member containing a phosphor on an upper surface of the light emitting element after the removal of the light absorbing part.