Component arrangement
First Claim
1. A component arrangement comprising:
- a carrier, wherein at least one electronic component is formed in the carrier;
a first metallization layer above the carrier, wherein the first metallization layer comprises a first metallic coupling structure, which is coupled to the at least one electronic component;
a second metallization layer above the first metallization layer, wherein the second metallization layer comprises a second metallic coupling structure, wherein the first metallic coupling structure is coupled to the second metallic coupling structure by at least one via;
a plurality of additional vias, which extend at least between the first metallization layer and the second metallization layer and which are electrically conductively coupled to one another in such a way that they form a coil comprising a coil region situated at an angle with respect to the main processing surface of the carrier;
a third metallization layer above the second metallization layer, wherein the third metallization layer comprises a third metallic coupling structure, wherein the second metallic coupling structure is coupled to the third metallic coupling structure by at least one via; and
wherein some of the additional vias extend at least between the first metallization layer and the third metallization layer;
wherein the coil comprises a plurality of coil turns;
wherein the at least two coil turns define the coil region;
wherein the plurality of additional vias extend at least between the first metallization layer and the second metallization layer in such a way that the coil region is situated substantially perpendicularly to the main processing surface of the carrier; and
wherein the coil comprises a coil turn, and wherein the coil turn is substantially perpendicular to the main processing surface of the carrier.
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Accused Products
Abstract
Various embodiments may relate to a component arrangement, including a carrier, wherein at least one electronic component is formed in the carrier, a first metallization layer over the carrier, wherein the first metallization layer has a first metallic coupling structure, which is electrically coupled to the at least one electronic component, a second metallization layer over the first metallization layer, wherein the second metallization layer has a second metallic coupling structure, wherein the first metallic coupling structure is coupled to the second metallic coupling structure by means of at least one via, and a plurality of additional vias, which extend at least between the first metallization layer and the second metallization layer and are electrically conductively coupled to one another in such a way that they form a coil, which has a coil region which is at an angle to the main processing surface of the carrier.
11 Citations
20 Claims
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1. A component arrangement comprising:
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a carrier, wherein at least one electronic component is formed in the carrier; a first metallization layer above the carrier, wherein the first metallization layer comprises a first metallic coupling structure, which is coupled to the at least one electronic component; a second metallization layer above the first metallization layer, wherein the second metallization layer comprises a second metallic coupling structure, wherein the first metallic coupling structure is coupled to the second metallic coupling structure by at least one via; a plurality of additional vias, which extend at least between the first metallization layer and the second metallization layer and which are electrically conductively coupled to one another in such a way that they form a coil comprising a coil region situated at an angle with respect to the main processing surface of the carrier; a third metallization layer above the second metallization layer, wherein the third metallization layer comprises a third metallic coupling structure, wherein the second metallic coupling structure is coupled to the third metallic coupling structure by at least one via; and wherein some of the additional vias extend at least between the first metallization layer and the third metallization layer; wherein the coil comprises a plurality of coil turns; wherein the at least two coil turns define the coil region; wherein the plurality of additional vias extend at least between the first metallization layer and the second metallization layer in such a way that the coil region is situated substantially perpendicularly to the main processing surface of the carrier; and wherein the coil comprises a coil turn, and wherein the coil turn is substantially perpendicular to the main processing surface of the carrier. - View Dependent Claims (2, 3, 4, 5)
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6. A component arrangement comprising:
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a carrier, wherein at least one electronic component is formed in the carrier; a first metallization layer above the carrier, wherein the first metallization layer comprises a first metallic coupling structure, which is coupled to the at least one electronic component; a second metallization layer above the first metallization layer, wherein the second metallization layer comprises a second metallic coupling structure, wherein the first metallic coupling structure is coupled to the second metallic coupling structure by at least one via; a plurality of additional vias, which extend at least between the first metallization layer and the second metallization layer and which are electrically conductively coupled to one another in such a way that they form a coil comprising a coil region situated at an angle with respect to the main processing surface of the carrier; a third metallization layer above the second metallization layer, wherein the third metallization layer comprises a third metallic coupling structure, wherein the second metallic coupling structure is coupled to the third metallic coupling structure by at least one via; and wherein some of the additional vias extend at least between the first metallization layer and the third metallization layer; wherein the coil comprises a plurality of coil turns; wherein the at least two coil turns define the coil region; wherein the plurality of additional vias extend at least between the first metallization layer and the second metallization layer in such a way that the coil region is situated substantially perpendicularly to the main processing surface of the carrier; at least one additional carrier; a first additional metallization layer above the additional carrier; and wherein the first additional metallization layer is coupled to at least some of the plurality of additional vias, such that a part of the first additional metallization layer forms a part of the coil. - View Dependent Claims (7, 8, 9, 10)
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11. A component arrangement comprising:
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a carrier, wherein at least one electronic component is formed in the carrier; a first metallization layer above the carrier, wherein the first metallization layer comprises a first metallic coupling structure, which is coupled to the at least one electronic component; a second metallization layer above the first metallization layer, wherein the second metallization layer comprises a second metallic coupling structure, wherein the first metallic coupling structure is coupled to the second metallic coupling structure by at least one via; a plurality of additional vias, which extend at least between the first metallization layer and the second metallization layer and which are electrically conductively coupled to one another in such a way that they form a coil comprising a coil region situated at an angle with respect to the main processing surface of the carrier; a third metallization layer above the second metallization layer, wherein the third metallization layer comprises a third metallic coupling structure, wherein the second metallic coupling structure is coupled to the third metallic coupling structure by at least one via, wherein the third metallic coupling structure further comprises electrically conductive tracks which are insulated from one another by a dielectric; wherein some of the additional vias extend at least between the first metallization layer and the third metallization layer; wherein the coil comprises a plurality of coil turns; wherein the at least two coil turns define the coil region; wherein the plurality of additional vias extend at least between the first metallization layer and the second metallization layer in such a way that the coil region is situated substantially perpendicularly to the main processing surface of the carrier; and wherein the coil comprises a coil turn, and wherein the coil turn is substantially perpendicular to the main processing surface of the carrier. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification