Method of manufacturing a semiconductor device

• US 9,786,540 B2
• Filed: 10/13/2014
• Issued: 10/10/2017
• Est. Priority Date: 08/14/2009
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Lu, Yung-Jean, Chen, Ming-Fa, Chen, Chen-Shien, Huang, Jao Sheng
• Primary Examiner(s): PHAN, THIEM D
• Application Number:
  US14/513,104
• Publication Number:
  US 20150040387A1
• Time in Patent Office: 1,093 Days
• Field of Search: 29829, 29825, 29846, 29852
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: Y10T 29/49124 On flat or curved insulated base, e.g., printed circuit, etc.

Abstract

A system and method for a semiconductor wafer carrier is disclosed. An embodiment comprises a semiconductor wafer carrier wherein conductive dopants are implanted into the carrier in order to amplify the coulombic forces between an electrostatic chuck and the carrier to compensate for reduced forces that result from thinner semiconductor wafers. Another embodiment forms conductive layers and vias within the carrier instead of implanting conductive dopants.

Claims

1. A method of manufacturing a semiconductor device, the method comprising:

forming a conductive via through a carrier;

adhering a semiconductor substrate to the carrier, the semiconductor substrate comprising a plurality of conductive vias extending partially through the semiconductor substrate;

attaching the carrier to an electrostatic chuck;

exposing the plurality of conductive vias while the carrier is attached to the electrostatic chuck; and

removing the carrier from the semiconductor substrate.

2. The method of claim 1, wherein the forming the conductive via further comprises:

forming an opening within the carrier; and

filling the opening with a conductive material.

3. The method of claim 2, wherein the conductive material comprises titanium dioxide.

4. The method of claim 2, wherein the conductive material comprises a liquid conductive organic material.

5. The method of claim 4, wherein the liquid conductive organic material comprises a polyaniline.

6. The method of claim 4, wherein the forming the conductive via further comprises curing the liquid conductive organic material after the filling the opening with the conductive material.

7. A method of manufacturing a semiconductor device, the method comprising:

forming a conductive via through a carrier;

adhering a semiconductor substrate to the carrier, the semiconductor substrate comprising a plurality of conductive vias extending partially through the semiconductor substrate;

attaching the carrier to an electrostatic chuck;

applying a coulombic force to the electrostatic chuck;

exposing the plurality of conductive vias while the carrier is attached to the electrostatic chuck; and

removing the carrier from the semiconductor substrate.

8. The method of claim 7, wherein the forming the conductive via further comprises:

forming an opening within the carrier; and

filling the opening with a conductive material.

9. The method of claim 8, wherein the conductive material comprises a liquid conductive organic material.

10. The method of claim 9, wherein the liquid conductive organic material comprises a polypyrroles.

11. The method of claim 7, further comprising forming a conductive layer on a surface of the carrier.

12. The method of claim 11, wherein the conductive layer has a thickness between 1 um and 20 um.

13. A method of manufacturing a semiconductor device, the method comprising:

forming a conductive via through a carrier, the carrier comprising glass;

adhering a semiconductor substrate to the carrier, the semiconductor substrate comprising a plurality of conductive vias extending partially through the semiconductor substrate;

attaching the carrier to an electrostatic chuck;

exposing the plurality of conductive vias while the carrier is attached to the electrostatic chuck; and

removing the carrier from the semiconductor substrate.

14. The method of claim 13, wherein the forming the conductive via further comprises:

forming an opening within the carrier; and

filling the opening with a conductive material.

15. The method of claim 14, wherein the filling the opening with a conductive material comprises depositing the conductive material through chemical vapor deposition.

16. The method of claim 14, wherein the filling the opening with a conductive material comprises depositing the conductive material through plasma enhanced chemical vapor deposition.

17. The method of claim 14, wherein the conductive material comprises a solid material.

18. The method of claim 17, wherein the conductive material comprises titanium dioxide.

19. The method of claim 17, wherein the conductive material comprises aluminum oxide.

20. The method of claim 17, wherein the conductive material comprises indium tin oxide.