Semiconductor component with dielectric layer stack and voltage divider

• US 9,786,659 B2
• Filed: 08/25/2010
• Issued: 10/10/2017
• Est. Priority Date: 08/25/2009
• Status: Active Grant

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Werner, Wolfgang
• Primary Examiner(s): PIZARRO CRESPO, MARCOS D
• Application Number:
  US12/862,821
• Publication Number:
  US 20110049667A1
• Time in Patent Office: 2,603 Days
• Field of Search: 257314-317, 257319-323, 257E293-E29309
• CPC Class Codes: H01L 23/52 Arrangements for conducting electric current within the device in operation from one component to another , i.e. interconnections, e.g. wires, lead frames optical interconnections G02B6/00
• CPC Class Codes: H01L 27/0676 comprising combinations of diodes, or capacitors or resistors
• CPC Class Codes: H01L 27/0802 Resistors only
• CPC Class Codes: H01L 27/0805 Capacitors only
• CPC Class Codes: H01L 27/0814 Diodes only

Abstract

A semiconductor component has a semiconductor body zone, a first electrically conductive layer adjacent to the semiconductor body zone, a first dielectric layer with first dielectric properties and a second dielectric layer with second dielectric properties. The first dielectric properties differ from the second dielectric properties. The first dielectric layer and the second dielectric layer are arranged between the semiconductor body zone and the first electrically conductive layer. A second electrically conductive layer is applied between the first dielectric layer and the second dielectric layer. A first voltage divider is switched between the first electrically conductive layer and the semiconductor body zone. The second electrically conductive layer is electrically conductively connected only to the voltage divider.

Claims

1. A semiconductor component, comprising:

a semiconductor body;

a first electrically conductive layer on the semiconductor body;

a first dielectric layer between the semiconductor body and the first electrically conductive layer and having first dielectric properties;

a second dielectric layer between the semiconductor body and the first electrically conductive layer and having second dielectric properties different from the first dielectric properties; and

a second electrically conductive layer between the first dielectric layer and the second dielectric layer;

wherein the second electrically conductive layer dissipates charges penetrating through the first and second dielectric layers via an electrically conductive connection that is fixed regardless of the operating state of the semiconductor component.

2. A semiconductor component, comprising:

a semiconductor body;

a first electrically conductive layer on the semiconductor body;

a first dielectric layer between the semiconductor body and the first electrically conductive layer and having first dielectric properties;

a second dielectric layer between the semiconductor body and the first electrically conductive layer and having second dielectric properties different from the first dielectric properties;

a second electrically conductive layer between the first dielectric layer and the second dielectric layer; and

a voltage divider having a first node connected to the semiconductor body, a second node connected to the first electrically conductive layer and a third node connected to the second electrically conductive layer, wherein the third node of the voltage divider is always connected to the second electrically conductive layer regardless of the operating state of the semiconductor component.

3. A semiconductor component, comprising:

a semiconductor body;

a first electrically conductive layer adjacent the semiconductor body;

a first dielectric layer located between the semiconductor body and the first electrically conductive layer and having first dielectric properties;

a second dielectric layer located between the semiconductor body and the first electrically conductive layer and having second dielectric properties different from the first dielectric properties;

a second electrically conductive layer arranged between the first dielectric layer and the second dielectric layer; and

a voltage divider, connected to the semiconductor body, the first electrically conductive layer and the second electrically conductive layer, wherein the second electrically conductive layer is connected to the voltage divider by an electrically conductive connection that is constant in all operating states of the semiconductor component.

4. The semiconductor component according to claim 3, wherein the first dielectric layer has a thickness of 10 nm to 2 μ

m.

5. The semiconductor component according to claim 3, wherein the first dielectric layer adjoins the semiconductor body.

6. The semiconductor component according to claim 3, wherein the second dielectric layer has a thickness of 10 nm to 2 μ

m.

7. The semiconductor component according to claim 3, wherein the second dielectric layer adjoins the first electrically conductive layer.

8. The semiconductor component according to claim 3, wherein the first and second dielectric layers have different electrical conductivities.

9. The semiconductor component according to claim 3, wherein the first dielectric layer is composed of SiO₂ and the second dielectric layer is composed of a dielectric material different from SiO₂.

10. The semiconductor component according to claim 3, wherein at least one of the dielectric layers has a negative temperature coefficient of the relative dielectric constants ∈

_r.

11. The semiconductor component according to claim 3, wherein the semiconductor body is a channel of an MOS transistor.

12. The semiconductor component according to claim 3, wherein the second electrically conductive layer has a thickness of 10 nm to 100 nm.

13. The semiconductor component according to claim 3, wherein the voltage divider is composed of at least one electrical resistance and at least one diode.

14. The semiconductor component according to claim 13, wherein the at least one electrical resistance is switched between the first electrically conductive layer and the second electrically conductive layer and the at least one diode is switched between the second electrically conductive layer and the semiconductor body zone.

15. The semiconductor component according to claim 3, wherein the voltage divider is composed of at least two diodes.

16. The semiconductor component according to claim 15, wherein a first one of the at least two diodes is switched between the first electrically conductive layer and the second electrically conductive layer and a second one of the at least two diodes is switched between the second electrically conductive layer and the semiconductor body zone.

17. The semiconductor component according to claim 3, wherein the voltage divider comprises at least two electrical resistances.

18. The semiconductor component according to claim 17, wherein a first one of the at least two electrical resistances is connected to the first electrically conductive layer and the second conductive layer and a second one of the at least two electrical resistances is connected to the second electrically conductive layer and the semiconductor body.

19. The semiconductor component according to claim 17, wherein a first one of the at least two electrical resistances is switched between the first electrically conductive layer and the second electrically conductive layer and a second one of the at least two electrical resistances is switched between the second electrically conductive layer and a third electrically conductive layer, wherein the third conductive layer is electrically connected to the semiconductor body zone.

20. The semiconductor component according to claim 17, wherein at least one of the at least two electrical resistances is part of the first dielectric layer or the second dielectric layer.