Light-emitting device
First Claim
1. A light-emitting device comprising:
- a wiring;
a first transistor comprising a first semiconductor film, and a first gate electrode and a second gate electrode overlapping with each other with the first semiconductor film therebetween;
a second transistor comprising a second semiconductor film;
a first capacitor configured to hold a potential difference between one of a first source electrode and a first drain electrode of the first transistor and the first gate electrode;
a second capacitor configured to hold a potential difference between the one of the first source electrode and the first drain electrode of the first transistor and the second gate electrode; and
a light-emitting element supplied with drain current of the first transistor;
wherein the second transistor is configured to control conduction between the second gate electrode and the wiring, andwherein a semiconductor film of each of the first transistor and the second transistor comprises a semiconductor region overlapping with a gate electrode and having a carrier density less than or equal to 1×
1017/cm3.
1 Assignment
0 Petitions
Accused Products
Abstract
A light-emitting device capable of suppressing variation in luminance among pixels is provided. A light-emitting device includes a pixel and first and second circuits. The first circuit has a function of generating a signal including a value of current extracted from the pixel. The second circuit has a function of correcting an image signal by the signal. The pixel includes at least a light-emitting element and first and second transistors. The first transistor has a function of controlling supply of the current to the light-emitting element by the image signal. The second transistor has a function of controlling extraction of the current from the pixel. A semiconductor film of each of the first and second transistors includes a first semiconductor region overlapping with a gate, a second semiconductor region in contact with a source or a drain, and a third semiconductor region between the first and second semiconductor regions.
261 Citations
32 Claims
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1. A light-emitting device comprising:
- a wiring;
a first transistor comprising a first semiconductor film, and a first gate electrode and a second gate electrode overlapping with each other with the first semiconductor film therebetween; a second transistor comprising a second semiconductor film; a first capacitor configured to hold a potential difference between one of a first source electrode and a first drain electrode of the first transistor and the first gate electrode; a second capacitor configured to hold a potential difference between the one of the first source electrode and the first drain electrode of the first transistor and the second gate electrode; and a light-emitting element supplied with drain current of the first transistor; wherein the second transistor is configured to control conduction between the second gate electrode and the wiring, and wherein a semiconductor film of each of the first transistor and the second transistor comprises a semiconductor region overlapping with a gate electrode and having a carrier density less than or equal to 1×
1017/cm3. - View Dependent Claims (2, 3, 4)
- a wiring;
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5. A light-emitting device comprising:
-
a first wiring, a second wiring, and a third wiring; a capacitor; a light-emitting element; a first transistor configured to control conduction between the first wiring and a first electrode of the capacitor; a second transistor configured to control conduction between the second wiring and a gate electrode of a fifth transistor; a third transistor configured to control conduction between the first electrode of the capacitor and the gate electrode of the fifth transistor; a fourth transistor configured to control conduction between one of a source electrode and a drain electrode of the fifth transistor and the third wiring; and the fifth transistor, wherein a second electrode of the capacitor is electrically connected to the one of the source electrode and the drain electrode of the fifth transistor and an anode of the light-emitting element, and wherein a semiconductor film of each of the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor comprises a semiconductor region overlapping with a gate electrode and having a carrier density less than or equal to 1×
1017/cm3. - View Dependent Claims (6, 7, 8)
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9. A light-emitting device comprising:
- a wiring;
a first transistor comprising a first semiconductor film, and a first gate electrode and a second gate electrode overlapping with each other with the first semiconductor film therebetween; a second transistor comprising a second semiconductor film; a first capacitor configured to hold a potential difference between one of a first source electrode and a first drain electrode of the first transistor and the first gate electrode; a second capacitor configured to hold a potential difference between the one of the first source electrode and the first drain electrode of the first transistor and the second gate electrode; and a light-emitting element supplied with drain current of the first transistor; wherein the second transistor is configured to control conduction between the second gate electrode and the wiring, and wherein the first semiconductor film and the second semiconductor film comprises; a first semiconductor region overlapping with a gate electrode; a second semiconductor region in contact with a source electrode or a drain electrode; and a third semiconductor region between the first semiconductor region and the second semiconductor region, a resistivity of the third semiconductor region being greater than or equal to 1×
10−
3 Ω
cm and less than 1×
104 Ω
cm. - View Dependent Claims (10, 11, 12)
- a wiring;
-
13. A light-emitting device comprising:
-
a first wiring, a second wiring, and a third wiring;
a capacitor;a light-emitting element; a first transistor configured to control conduction between the first wiring and a first electrode of the capacitor; a second transistor configured to control conduction between the second wiring and a gate electrode of a fifth transistor; a third transistor configured to control conduction between the first electrode of the capacitor and the gate electrode of the fifth transistor; a fourth transistor configured to control conduction between one of a source electrode and a drain electrode of the fifth transistor and the third wiring; and the fifth transistor, wherein a second electrode of the capacitor is electrically connected to the one of the source electrode and the drain electrode of the fifth transistor and an anode of the light-emitting element, and wherein a semiconductor film of each of the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor comprises; a first semiconductor region overlapping with a gate electrode; a second semiconductor region in contact with a source electrode or a drain electrode; and a third semiconductor region between the first semiconductor region and the second semiconductor region, a resistivity of the third semiconductor region being greater than or equal to 1×
10−
3 Ω
cm and less than 1×
104 Ω
cm. - View Dependent Claims (14, 15, 16)
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17. A light-emitting device comprising:
- a wiring;
a first transistor comprising a first semiconductor film, and a first gate electrode and a second gate electrode overlapping with each other with the first semiconductor film therebetween; a second transistor comprising a second semiconductor film; a first capacitor configured to hold a potential difference between one of a first source electrode and a first drain electrode of the first transistor and the first gate electrode; a second capacitor configured to hold a potential difference between the one of the first source electrode and the first drain electrode of the first transistor and the second gate electrode; and a light-emitting element supplied with drain current of the first transistor; wherein the second transistor is configured to control conduction between the second gate electrode and the wiring, and, and wherein a variation in resistivity of the first semiconductor film and the second semiconductor film at temperatures from 150 K to 250 K is lower than ±
10%. - View Dependent Claims (18, 19, 20)
- a wiring;
-
21. A light-emitting device comprising:
-
a first wiring, a second wiring, and a third wiring;
a capacitor;a light-emitting element; a first transistor configured to control conduction between the first wiring and a first electrode of the capacitor; a second transistor configured to control conduction between the second wiring and a gate electrode of a fifth transistor; a third transistor configured to control conduction between the first electrode of the capacitor and the gate electrode of the fifth transistor; a fourth transistor configured to control conduction between one of a source electrode and a drain electrode of the fifth transistor and the third wiring; and the fifth transistor, wherein a second electrode of the capacitor is electrically connected to the one of the source electrode and the drain electrode of the fifth transistor and an anode of the light-emitting element, and wherein a variation in resistivity of a semiconductor film of each of the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor at temperatures from 150 K to 250 K is lower than ±
10%. - View Dependent Claims (22, 23, 24)
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25. A light-emitting device comprising:
- a wiring;
a first transistor comprising a first semiconductor film, and a first gate electrode and a second gate electrode overlapping with each other with the first semiconductor film therebetween; a second transistor comprising a second semiconductor film; a first capacitor configured to hold a potential difference between one of a first source electrode and a first drain electrode of the first transistor and the first gate electrode; a second capacitor configured to hold a potential difference between the one of the first source electrode and the first drain electrode of the first transistor and the second gate electrode; and a light-emitting element supplied with drain current of the first transistor; wherein the second transistor is configured to control conduction between the second gate electrode and the wiring, and wherein a third gate electrode of the second transistor is provided over the second semiconductor film. - View Dependent Claims (26, 27, 28)
- a wiring;
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29. A light-emitting device comprising:
-
a first wiring, a second wiring, and a third wiring;
a capacitor;a light-emitting element; a first transistor configured to control conduction between the first wiring and a first electrode of the capacitor; a second transistor configured to control conduction between the second wiring and a gate electrode of a fifth transistor; a third transistor configured to control conduction between the first electrode of the capacitor and the gate electrode of the fifth transistor; a fourth transistor configured to control conduction between one of a source electrode and a drain electrode of the fifth transistor and the third wiring; and the fifth transistor, wherein a second electrode of the capacitor is electrically connected to the one of the source electrode and the drain electrode of the fifth transistor and an anode of the light-emitting element, and wherein a first gate electrode of the first transistor is provided over a first semiconductor film of the first transistor, a second gate electrode of the second transistor is provided over a second semiconductor film of the second transistor, a third gate electrode of the third transistor is provided over a third semiconductor film of the third transistor, a fourth gate electrode of the fourth transistor is provided over a fourth semiconductor film of the fourth transistor, and a fifth gate electrode of the fifth transistor is provided over a fifth semiconductor film of the fifth transistor. - View Dependent Claims (30, 31, 32)
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Specification