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Power semiconductor device

  • US 9,786,736 B2
  • Filed: 03/04/2016
  • Issued: 10/10/2017
  • Est. Priority Date: 05/12/2010
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device including a power MISFET having a super junction structure, comprising steps of:

  • (a) providing a semiconductor substrate;

    (b) forming a first n-type layer over the semiconductor substrate;

    (c) selectively introducing impurities into the first n-type layer, thereby forming first and second p-type impurity regions in the first n-type layer;

    (d) forming a second n-type layer over the first n-type layer, the first p-type impurity region and the second p-type impurity region;

    (e) selectively introducing impurities into the second n-type layer, thereby forming third and fourth p-type impurity regions in the second n-type layer such that the first and third p-type impurity regions are connected and the second and fourth p-type impurity regions are connected;

    (f) forming a body region of the power MISFET in the second n-type layer such that the body region is connected to a first p-type column and a second p-type column,(g) forming a source region of the power MISFET in the body region;

    (h) forming a gate insulating film of the power MISFET over the second n-type layer; and

    (i) forming a gate electrode of the power MISFET over the gate insulating film,wherein the first p-type column of the super junction structure comprises the first and third p-type impurity regions and extends in a first direction in a plan view,wherein the second p-type column of the super junction structure comprises the second and fourth p-type impurity regions and extends in the first direction in the plan view,wherein the second p-type column is arranged between the first p-type column and an edge of the semiconductor substrate in a second direction perpendicular to the first direction in the plan view, andwherein the second p-type column includes a larger impurity concentration portion than the first p-type column.

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